Fairchild Semiconductor P1086 Datasheet
P1086
P-Channel Switch
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
P1086
D
SG
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
TO-92
V
DG
V
GS
I
GF
T
, T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Drain-Gate Voltage - 30 V
Gate-Source Voltage 30 V
Forward Gate Current 50 mA
Operating and Storage Junction Temperature Range -55 ~ +150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
GSS
I
GSS
(off) Drain Cutoff Leakage Current VDS = 15V
I
D
I
DGO
I
DSS
V
GS
(on) Drain-Source On Voltage VGS = 0V, ID = 6mA 0.5 V
V
DS
(on) Drain-Source On Resistance VGS = 0V, ID = 1mA 75 Ω
r
DS
(on) Drain-Source On Resistance VGS = 0V, ID = 0, f = 1kHz 75 Ω
r
ds
C
iss
C
rss
(on) Trun On Time VDD = -6V
t
d
t
r
(off) Trun Off Time 15 ns
t
d
t
f
Gate-Source Breakdown Voltage VDS = 0V , IG = 1µA30 V
Gate Reverse Current VGS = 15V 2 nA
10 nA
= 12V
V
GS
Drain-Gate Leakage Current VDG = 15V
= 0
I
S
T = +85°C0.5µA
N
2
T = +85°C0.1µA
A
Zero-Gate Voltage Drain Current VDS = 20V, VGS = 0V 10 mA
(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 1µA10V
Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz 45 pF
Reverse Transfer Capacitance VDS = 0V, VGS = 12V, f = 1MHz 10 pF
15 ns
V
(off) = +12V
Rise Time 20 ns
Fall Time 50 ns
GS
= 910Ω
R
L
(on) = 6mA
I
D
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357 °C/W
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
P1086
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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