Fairchild Semiconductor NZT6728 Datasheet
Discrete POWER & Signal
Technologies
TN6728A / NZT6728
TN6728A
C
B
E
TO-226
NZT6728
C
E
C
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0 A.
Sourced from Process 78.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 60 V
Collector-Base Voltage 60 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteri st ic Max Units
TN6728A *NZT6728
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 50
Thermal Resistance, Junction to Ambient 125 125 °C/W
1.0
8.0
1.0
8.0
2
.
W
mW/°C
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 060V
C oll ec t or -Base Breakd ow n Volt age IC = 100 µA, IE = 0 60 V
Em i t ter - Bas e B r e akdown Vol tage IE = 1.0 m A, IC = 0 5.0 V
Collector-Cutoff Current VCB = 40 V, IE = 0 0.1
Em i t ter - Cutoff C u r rent VEB = 5.0 V, IC = 0 0.1
DC Cu r re n t Ga in IC = 50 mA, VCE = 1.0 V
I
= 250 mA, VCE = 1.0 V
C
= 500 mA, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 250 mA, IB = 10 mA
)
C
= 250 mA, IB = 25 mA
I
C
80
50
20
250
0.5
0.35
µ
A
µ
A
V
V
Base-Emitter On Voltage IC = 250 mA, VCE = 1.0 V 1.2 V
TN6728A / NZT6728
SMALL SIGNAL CHARACTERISTICS
h
fe
C
cb
Small-Signal Current Gain VCE = 5.0 V, IC = 200 mA,
Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 30 pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
400
300
200
100
FE
h - TYPICAL PULSED CURRENT GAIN
- 40 ºC
0
0.01 0.1 1
I - COLLECTOR CURRENT (A)
C
25 °C
125 °C
V = 5V
CE
f = 20 MHz
2.5 25
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
ββ
= 10
0.5
0.4
0.3
0.2
0.1
0
0.01 0.1 1 1.5
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (A)
C
- 40 ºC
25 °C
125 ºC
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