Fairchild Semiconductor NZT660A, NZT660 Datasheet

July 1998

NZT660/NZT660A

NZT660 / NZT660A

C

E

C

B

SOT-223

PNP Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 3A

continuous.

Absolute Maximum Ratings* T

ParameterSymbol

V

CEO

V

CBO

V

EBO

I

C

T

J, Tstg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

A = 25°C unless otherwise noted

NZT660/NZT660A

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T

Symbol

P

D

R

θJA

A = 25°C unless otherwise noted

Max

Characteristic

NZT660/NZT660A

Units

V60Collector-Emitter Voltage
V80Collector-Base Voltage

V5Emitter-Base Voltage
A3Collector Current - Continuous

°C-55 to +150Operating and Storage Junction Temperature Range

Units

W2Total Device Dissipation

°C/W62.5Thermal Resistance, Junction to Ambient

 1998 Fairchild Semiconductor Corporation

Nzt660.lwpPrPA 7/10/98 revC

SMALL SIGNAL CHARACTERISTICS

ON

CHARACTERISTICS

OFF CHARACTERISTICS

PNP Low Saturation Transistor

NZT660/NZT660A

(continued)

Electrical Characteristics T

BV
BV
BV
I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

V

BE(on)

CEO

CBO

EBO

Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current

Emitter Cutoff Current

*

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage
Base-Emitter On Voltage

A = 25°C unless otherwise noted

= 10 mA

I

C

= 100 µA

I

C

= 100 µA

I

E

V

CB

V

CB

V

EB

= 100 mA, VCE = 2 V

I

C

I

= 500 mA, VCE = 2 V NZT660

C

NZT660A
IC = 1 A, VCE = 2 V
I

= 3 A, VCE = 2 V

C

= 1 A, IB = 100 mA

I

C

I

= 3 A, IB = 300 mA NZT660

C

NZT660A
I

= 1 A, IB = 100 mA

C

= 1 A, VCE = 2 V

I

C

= 30 V
= 30 V, TA=100°C

= 4V

70
100
250

80

25

100

10

100

300
550

550
500

UnitsMaxMinTest ConditionsParameterSymbol

V60
V80
V5

nA
uA

nA

-

mV300

V1.25
V1

C

obo

f

T

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Output Capacitance
Transition Frequency

= 10 V, IE = 0, f = 1MHz

V

CB

= 100 mA,VCE = 5 V, f=100MHz

I

C

pF45

- 75

Nzt660.lwpPrPA 7/10/98 revC

T ypical Characteristics

Base-Emitter Saturation

Voltage v s C ol lector Current

1.4

β = 10

1.2

1

- 40°C

0.8

0.6

0.4

0.2

0.001 0.01 0.1 1 10

T
A
S
E
B

V -BASE-EMITTER SATURATION VOLTAGE(V)

I - COLL ECTOR CURR ENT ( A)

25°C

125°C

C

Collector-Emitter Saturation
Voltage vs Collector Current

0.8

β = 10

0.7

0.6

0.5

0.4

0.3

0.2

0.1
0

0.01 0.1 1 10

CESAT

V - COLLECTOR-EMITTER VOLTAGE (V)

I - COLLECTOR CURRENT (mA)

C

125 °C

25°C

- 40°C

Base-Emitter On Voltage vs.

Collector Current

1.6

V = 2.0V

ce

1.4

1.2
1

0.8

0.6

0.4

0.2

BEON

0.0001 0.001 0. 01 0.1 1 10

V - BA SE -EM ITTER O N VOLTAGE (V)

I - COL LE C T O R CURRE NT ( A)

C

- 40°C

25°C

125°C

Input/Output Capacit ance vs.

Reverse Bias Voltage

400
350
300

C

obo

250
200
150
100

CAPACITANCE (pf)

C

ibo

50

0

0.1 0.5 1 10 20 50 100

V - COLLE CT OR VOLTAGE (V)

CE

V = 2.0V

f = 1.0MH z

ce

Current Gain vs. Collector Current

1000

900

125°C

800
700
600
500

25°C

400
300

FE

H - CURRENT GAIN

200

- 40°C

100

0

0.0001 0.001 0.01 0.1 1 10

I - COLLECTOR CUR RENT (mA)

C

V = 2.0V

ce

PA