Fairchild Semiconductor NZT560, NZT560A Datasheet

NZT560/NZT560A

July 1998

NZT560 / NZT560A

C

E

C

B

SOT-223

NPN Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 3A

continuous.

Absolute Maximum Ratings* T

ParameterSymbol

V

CEO

V

CBO

V

EBO

I

C

T

J, Tstg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

A = 25°C unless otherwise noted

NZT560/NZT560A

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T

Symbol

P

D

R

θJA

A = 25°C unless otherwise noted

Max

Characteristic

NZT560/NZT560A

Units

V60Collector-Emitter Voltage
V80Collector-Base Voltage

V5Emitter-Base Voltage
A3Collector Current - Continuous

°C-55 to +150Operating and Storage Junction Temperature Range

Units

W2Total Device Dissipation

°C/W62.5Thermal Resistance, Junction to Ambient

 1998 Fairchild Semiconductor Corporation

nzt560.lwpPrNA 7/10/98 revC

SMALL SIGNAL CHARACTERISTICS

ON

CHARACTERISTICS

OFF CHARACTERISTICS

NPN Low Saturation Transistor

NZT560/NZT560A

(continued)

Electrical Characteristics T

BV
BV
BV
I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

V

BE(on)

CEO

CBO

EBO

Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current

Emitter Cutoff Current

*

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage
Base-Emitter On Voltage

A = 25°C unless otherwise noted

= 10 mA

I

C

= 100 µA

I

C

= 100 µA

I

E

V

CB

V

CB

V

EB

= 100 mA, VCE = 2 V

I

C

I

= 500 mA, VCE = 2 V NZT560

C

NZT560A
IC = 1 A, VCE = 2 V
I

= 3 A, VCE = 2 V

C

= 1 A, IB = 100 mA

I

C

I

= 3 A, IB = 300 mA NZT560

C

NZT560A
I

= 1 A, IB = 100 mA

C

= 1 A, VCE = 2 V

I

C

= 30 V
= 30 V, TA=100°C

= 4V

70
100
250

80

25

100

10

100

300
550

450
400

UnitsMaxMinTest ConditionsParameterSymbol

V60
V80
V5

nA
uA

nA

-

mV300

V1.25
V1

C

obo

f

T

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

 1998 Fairchild Semiconductor Corporation

Output Capacitance
Transition Frequency

= 10 V, IE = 0, f = 1MHz

V

CB

= 100 mA,VCE = 5 V, f=100MHz

I

C

pF30

- 75

Nzt560.lwpPrNA 7/10/98 revC

T ypical Characteristics

Base-Emitter Saturation

Voltage vs Collector Current

1.4

β = 10

1.2

1

- 40 °C

0.8

0.6

0.4

0.2

T

0.001 0.01 0.1 1 10

A
S
E
B

V -BAS E- EMITTER SATURATI ON VOLT AG E(V)

25 °C

125 °C

I - COLLEC TO R CU RR ENT (A)

C

Collector-Emitter Saturation
Voltage vs Collector Curr ent

0.8

β = 10

0.6

125 °C

0.4

0.2

0

0.001 0.01 0.1 1 10

CESAT

V - COLLECTOR-EMITTER VO LT A GE (V)

I - COLLECTOR CURRENT (mA)

C

25°C

- 40°C

Base-Emitter On Voltage vs.

Collector Current

1.4

V = 2.0V

ce

1.2

1

0.8

0.6

0.4

0.2

BEON

0.0001 0.001 0. 01 0.1 1 10

V - BASE -EM ITTER ON VOLTAGE (V)

I - COLL ECTOR CU RR ENT ( A)

C

- 40 °C

25 °C

125 °C

Input/Output Capacitance vs.

Reverse Bias Voltage

450
400
350
300

C

ibo

250
200
150

CAPACITANCE (pf)

100

50

0

0.1 0.2 0.5 1 2 5 10 20 50 100

C

obo

V - COLLECTOR VOLTAGE (V)

CE

f = 1.0 MHz

Cur re nt Ga i n v s. C ol lec t or Curren t

700

V = 2.0V

ce

600

500

400

300

200

FE

H - CURRENT GAIN

100

0

0 0.5 1 1.5 2 2.5 3 3.5

125 °C

25°C

- 40°C

I - COLLECTOR CURRENT (mA)

C

NA