Fairchild Semiconductor NM93CS66LEM, NM93CS66LEN, NM93CS66LM8, NM93CS66LMX, NM93CS66M8X Datasheet

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NM93CS66 Rev. F.2

NM93CS66 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM

with Data Protect and Sequential Read

February 2000

© 1999 Fairchild Semiconductor Corporation

NM93CS66
(MICROWIRE™ Bus Interface) 4096-Bit Serial EEPROM
with Data Protect and Sequential Read

General Description

NM93CS66 is a 4096-bit CMOS non-volatile EEPROM organized
as 256 x 16-bit array. This device features MICROWIRE interface
which is a 4-wire serial bus with chipselect (CS), clock (SK), data
input (DI) and data output (DO) signals. This interface is compat­ible to many of standard Microcontrollers and Microprocessors.
NM93CS66 offers programmable write protection to the memory
array using a special register called Protect Register. Selected
memory locations can be protected against write by programming
this Protect Register with the address of the first memory location
to be protected (all locations greater than or equal to this first
address are then protected from further change). Additionally, this
address can be “permanently locked” into the device, making all
future attempts to change data impossible. In addition this device
features “sequential read”, by which, entire memory can be read
in one cycle instead of multiple single byte read cycles. There are
10 instructions implemented on the NM93CS66, 5 of which are for
memory operations and the remaining 5 are for Protect Register
operations. This device is fabricated using Fairchild Semiconduc­tor floating-gate CMOS process for high reliability, high endurance
and low power consumption.

“LZ” and “L” versions of NM93CS66 offer very low standby current
making them suitable for low power applications. This device is offered
in both SO and TSSOP packages for small space considerations.

Functional Diagram

Features

■ Wide VCC 2.7V - 5.5V

■ Programmable write protection

■ Sequential register read

■ Typical active current of 200µA

10µA standby current typical
1µA standby current typical (L)

0.1µA standby current typical (LZ)

■ No Erase instruction required before Write instruction

■ Self timed write cycle

■ Device status during programming cycles

■ 40 year data retention

■ Endurance: 1,000,000 data changes

■ Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP

INSTRUCTION

DECODER

CONTROL LOGIC

AND CLOCK

GENERATORS

COMPARATOR

AND

WRITE ENABLE

HIGH VOLTAGE

GENERATOR

AND

PROGRAM

TIMER

INSTRUCTION

REGISTER

ADDRESS

REGISTER

PROTECT

REGISTER

EEPROM ARRAY

READ/WRITE AMPS

DATA IN/OUT REGISTER

16 BITS

DECODER

16

16

DATA OUT BUFFER

PRE

PE

CS

SK

DI

DO

V

SS

V

CC

2

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NM93CS66 Rev. F.2

NM93CS66 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM

with Data Protect and Sequential Read

Connection Diagram

Dual-In-Line Package (N)

8–Pin SO (M8) and 8–Pin TSSOP (MT8)

Top View

Package Number

N08E, M08A and MTC08

Pin Names

CS Chip Select

SK Serial Data Clock

DI Serial Data Input

DO Serial Data Output

GND Ground

PE Program Enable

PRE Protect Register Enable

V

CC

Power Supply

Ordering Information

NM 93 CS XX LZ E XXX Letter Description

Package N 8-pin DIP

M8 8-pin SO
MT8 8-pin TSSOP

Temp. Range None 0 to 70°C

V -40 to +125°C
E -40 to +85°C

Voltage Operating Range Blank 4.5V to 5.5V

L 2.7V to 5.5V
LZ 2.7V to 5.5V and

<1µA Standby Current

Density 66 4096 bits

C CMOS
CS Data protect and sequential

read

Interface 93 MICROWIRE

Fairchild Memory Prefix

V

CC

PE

GND

CS

SK

DI

DO

1

2

3

4

8

7

6

5

PRE

3

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NM93CS66 Rev. F.2

NM93CS66 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM

with Data Protect and Sequential Read

Absolute Maximum Ratings (Note 1)

Ambient Storage Temperature -65°C to +150°C

All Input or Output Voltages +6.5V to -0.3V

with Respect to Ground

Lead Temperature

(Soldering, 10 sec.) +300°C

ESD rating 2000V

Operating Conditions

Ambient Operating Temperature

NM93CS66 0°C to +70°C
NM93CS66E -40°C to +85°C
NM93CS66V -40°C to +125°C

Power Supply (V

CC

) 4.5V to 5.5V

DC and AC Electrical Characteristics V

CC

= 4.5V to 5.5V unless otherwise specified

Symbol Parameter Conditions Min Max Units

I

CCA

Operating Current CS = VIH, SK=1.0 MHz 1 mA

I

CCS

Standby Current CS = V

IL

50 µA

I

IL

Input Leakage VIN = 0V to V

CC

±-1 µA

I

OL

Output Leakage (Note 2)

V

IL

Input Low Voltage -0.1 0.8 V

V

IH

Input High Voltage 2 VCC +1

V

OL1

Output Low Voltage IOL = 2.1 mA 0.4 V

V

OH1

Output High Voltage IOH = -400 µA 2.4

V

OL2

Output Low Voltage IOL = 10 µA 0.2 V

V

OH2

Output High Voltage IOH = -10 µAV

CC

- 0.2

f

SK

SK Clock Frequency (Note 3) 1 MHz

t

SKH

SK High Time 0°C to +70°C 250 ns

-40°C to +125°C 300

t

SKL

SK Low Time 250 ns

t

SKS

SK Setup Time 50 ns

t

CS

Minimum CS Low Time (Note 4) 250 ns

t

CSS

CS Setup Time 100 ns

t

PRES

PRE Setup Time 50 ns

t

DH

DO Hold Time 70 ns

t

PES

PE Setup Time 50 ns

t

DIS

DI Setup Time 100 ns

t

CSH

CS Hold Time 0 ns

t

PEH

PE Hold Time 250 ns

t

PREH

PRE Hold Time 50 ns

t

DIH

DI Hold Time 20 ns

t

PD

Output Delay 500 ns

t

SV

CS to Status Valid 500 ns

t

DF

CS to DO in Hi-Z CS = V

IL

100 ns

t

WP

Write Cycle Time 10 ms

4

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NM93CS66 Rev. F.2

NM93CS66 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM

with Data Protect and Sequential Read

Absolute Maximum Ratings (Note 1)

Ambient Storage Temperature -65°C to +150°C

All Input or Output Voltages +6.5V to -0.3V

with Respect to Ground

Lead Temperature

(Soldering, 10 sec.) +300°C

ESD rating 2000V

Operating Conditions

Ambient Operating Temperature

NM93CS66L/LZ 0°C to +70°C
NM93CS66LE/LZE -40°C to +85°C
NM93CS66LV/LZV -40°C to +125°C

Power Supply (V

CC

) 2.7V to 5.5V

DC and AC Electrical Characteristics V

CC

= 2.7V to 5.5V unless otherwise specified

Symbol Parameter Conditions Min Max Units

I

CCA

Operating Current CS = VIH, SK=1.0 MHz 1 mA

I

CCS

Standby Current CS = V

IL

L 10 µA
LZ (2.7V to 4.5V) 1 µA

I

IL

Input Leakage VIN = 0V to V

CC

±1 µA

I

OL

Output Leakage (Note 2)

V

IL

Input Low Voltage -0.1 0.15V

CC

V

V

IH

Input High Voltage 0.8V

CC

VCC +1

V

OL

Output Low Voltage IOL = 10µA 0.1V

CC

V

V

OH

Output High Voltage IOH = -10µA 0.9V

CC

f

SK

SK Clock Frequency (Note 3) 0 250 KHz

t

SKH

SK High Time 1 µs

t

SKL

SK Low Time 1 µs

t

SKS

SK Setup Time 0.2 µs

t

CS

Minimum CS Low Time (Note 4) 1 µs

t

CSS

CS Setup Time 0.2 µs

t

PRES

PRE Setup Time 50 ns

t

DH

DO Hold Time 70 ns

t

PES

PE Setup Time 50 ns

t

DIS

DI Setup Time 0.4 µs

t

CSH

CS Hold Time 0 ns

t

PEH

PE Hold Time 250 ns

t

PREH

PRE Hold Time 50 ns

t

DIH

DI Hold Time 0.4 µs

t

PD

Output Delay 2 µs

t

SV

CS to Status Valid 1 µs

t

DF

CS to DO in Hi-Z CS = V

IL

0.4 µs

t

WP

Write Cycle Time 15 ms

Capacitance TA = 25°C, f = 1 MHz (Note 5)

Symbol Test Typ Max Units

C

OUT

Output Capacitance 5 pF

C

IN

Input Capacitance 5 pF

Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of the specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.

Note 2: Typical leakage values are in the 20nA range.

Note 3: The shortest allowable SK clock period = 1/f

SK

(as shown under the fSK parameter). Maximum
SK clock speed (minimum SK period) is determined by the interaction of several AC parameters stated
in the datasheet. Within this SK period, both t

SKH

and t

SKL

limits must be observed. Therefore, it is not

allowable to set 1/fSK = t

SKHminimum

+ t

SKLminimum

for shorter SK cycle time operation.

Note 4: CS (Chip Select) must be brought low (to V

IL

) for an interval of tCS in order to reset all internal
device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode
diagram on the following page.)

Note 5: This parameter is periodically sampled and not 100% tested.

AC Test Conditions

VCC Range VIL/V

IH

VIL/V

IH

VOL/V

OH

IOL/I

OH

Input Levels Timing Level Timing Level

2.7V ≤ VCC ≤ 5.5V 0.3V/1.8V 1.0V 0.8V/1.5V ±10µA

(Extended Voltage Levels)

4.5V ≤ VCC ≤ 5.5V 0.4V/2.4V 1.0V/2.0V 0.4V/2.4V 2.1mA/-0.4mA

(TTL Levels)

Output Load: 1 TTL Gate (CL = 100 pF)

5

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NM93CS66 Rev. F.2

NM93CS66 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM

with Data Protect and Sequential Read

Pin Description

Chip Select (CS)

This is an active high input pin to NM93CS66 EEPROM (the device)
and is generated by a master that is controlling the device. A high
level on this pin selects the device and a low level deselects the
device. All serial communications with the device is enabled only
when this pin is held high. However this pin cannot be permanently
tied high, as a rising edge on this signal is required to reset the
internal state-machine to accept a new cycle and a falling edge to
initiate an internal programming after a write cycle. All activity on the
SK, DI and DO pins are ignored while CS is held low.

Serial Clock (SK)

This is an input pin to the device and is generated by the master that
is controlling the device. This is a clock signal that synchronizes the
communication between a master and the device. All input informa­tion (DI) to the device is latched on the rising edge of this clock input,
while output data (DO) from the device is driven from the rising edge
of this clock input. This pin is gated by CS signal.

Serial Input (DI)

This is an input pin to the device and is generated by the master
that is controlling the device. The master transfers Input informa­tion (Start bit, Opcode bits, Array addresses and Data) serially via
this pin into the device. This Input information is latched on the
rising edge of the SCK. This pin is gated by CS signal.

Serial Output (DO)

This is an output pin from the device and is used to transfer Output
data via this pin to the controlling master. Output data is serially
shifted out on this pin from the rising edge of the SCK. This pin is
active only when the device is selected.

Protect Register Enable (PRE)

This is an active high input pin to the device and is used to
distinguish operations to memory array and operations to Protect
Register. When this pin is held low, operations to the memory
array are enabled. When this pin is held high, operations to the
Protect Register are enabled. This pin operates in conjunction
with PE pin. Refer Table1 for functional matrix of this pin for
various operations.

Program Enable (PE)

This is an active high input pin to the device and is used to enable
operations, that are write in nature, to the memory array and to the
Protect register. When this pin is held high, operations that are
“write” in nature are enabled. When this pin is held low, operations
that are “write” in nature are disabled. This pin operates in
conjunction with PRE pin. Refer Table1 for functional matrix of this
pin for various operations.

Microwire Interface

A typical communication on the Microwire bus is made through the
CS, SK, DI and DO signals. To facilitate various operations on the
Memory array and on the Protect Register, a set of 10 instructions
are implemented on NM93CS66. The format of each instruction is
listed in Table 1.

Instruction

Each of the above 10 instructions is explained under individual
instruction descriptions.

Start Bit

This is a 1-bit field and is the first bit that is clocked into the device
when a Microwire cycle starts. This bit has to be “1” for a valid cycle
to begin. Any number of preceding “0” can be clocked into the
device before clocking a “1”.

Opcode

This is a 2-bit field and should immediately follow the start bit.
These two bits (along with PRE, PE signals and 2 MSB of address
field) select a particular instruction to be executed.

Address Field

This is a 8-bit field and should immediately follow the Opcode bits.
In NM93CS66, all 8 bits are used for address decoding during
READ, WRITE and PRWRITE instructions.During all other in­structions (with the exception of PRREAD), the MSB 2 bits are
used to decode instruction (along with Opcode bits, PRE and PE
signals).

Data Field

This is a 16-bit field and should immediately follow the Address
bits. Only the WRITE and WRALL instructions require this field.
D15 (MSB) is clocked first and D0 (LSB) is clocked last (both
during writes as well as reads).

TABLE 1. Instruction set

Instruction Start Bit Opcode Field Address Field Data Field PRE Pin PE Pin

READ 1 10 A7 A6 A5 A4 A3 A2 A1 A0 0 X

WEN 1 00 11XXXXXX 0 1

WRITE 1 01 A7 A6 A5 A4 A3 A2 A1 A0 D15-D0 0 1

WRALL 1 00 0 1 X X XXXX D15-D0 0 1

WDS 1 00 0 0XXXXXX 0 X

PRREAD 1 10 XXXXXXXX 1 X

PREN 1 00 1 1 X X XXXX 1 1

PRCLEAR 1 11 11111111 1 1

PRWRITE 1 01 A7 A6 A5 A4 A3 A2 A1 A0 1 1

PRDS 1 00 00000000 1 1