Fairchild Semiconductor NM34W02LM8X, NM34W02EM8, NM34W02ULMT8X, NM34W02ULMT8, NM34W02ULM8X Datasheet

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NM34W02 Rev. C.2

NM34W02 2K-Bit Standard 2-Wire Bus Interface Serial EEPROM

with Full Array Write Protect

© 1999 Fairchild Semiconductor Corporation

NM34W02
2K-Bit Standard 2-Wire Bus Interface Serial EEPROM

with Full Array Write Protect

Designed with Permanent Write-Protection for First 128 Bytes for Serial Presence
Detect Application on Memory Modules (PC100 Compliant)

General Description

The NM34W02 is 2048 bits of CMOS non-volatile electrically
erasable memory. This device is specifically designed to support
Serial Presence Detect circuitry in memory modules. This com­munications protocol uses CLOCK (SCL) and DATA I/O (SDA)
lines to synchronously clock data between the master (for ex­ample a microprocessor) and the slave EEPROM device(s).

The contents of the non-volatile memory allows the CPU to
determine the capacity of the module and the electrical character­istics of the memory devices it contains. This will enable "plug and
play" capability as the module is read and PC main memory
resources utilized through the memory controller.

The first 128 bytes of the memory of the NM34W02 can be
permanently Write Protected by writing to the "WRITE PROTECT"
Register. Write Protect implementation details are described
under the section titled Addressing the WP Register. In addition,
like the NM24Wxx product family, the entire memory array can be
write-protected through "WP" pin.

The NM34W02 is available in a JEDEC standard TSSOP package
for low profile memory modules for systems requiring efficient
space utilization such as in a notebook computer. Two options are
available: L - Low Voltage and LZ - Low Power, allowing the part
to be used in systems where battery life is of primary importance.

Block Diagram

Features

■ PC100 Compliant

■ Extended Operating Voltage: 2.7V-5.5V

■ Software Write-Protection for first 128 bytes

■ Hardware Write-Protection for entire memory array

■ 200 µA active current typical

– 1.0 µA standby current typical (L)
– 0.1 µA standby current typical (LZ)

■ IIC compatible interface
– Provides bidirectional data transfer protocol

■ Sixteen byte page write mode
– Minimizes total write time per byte

■ Self timed write cycle

- Typical write cycle time of 6ms

■ Endurance: 1,000,000 data changes

■ Data retention greater than 40 years

■ Packages available: 8-pin TSSOP and 8-pin SO

■ Temperature Ranges: Commercial and Extended

DS500078-1

H.V. GENERATION

TIMING &CONTROL

E2PROM

ARRAY

16 x 16 x 8

16

YDEC

8

DATA REGISTER

XDEC

CONTROL

LOGIC

WORD
ADDRESS
COUNTER

SLAVE ADDRESS

REGISTER &

COMPARATOR

START

STOP

LOGIC

START CYCLE

16

4

4

CK

D

IN

R/W

LOAD INC

SDA

V

SS

V

CC

WP

D

OUT

A2
A1
A0

Device Address Bits

0/1/2/3

SCL

Write Protect

Register

March 1999

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NM34W02 Rev. C.2

NM34W02 2K-Bit Standard 2-Wire Bus Interface Serial EEPROM

with Full Array Write Protect

A0
A1
A2

V

SS

V

CC

WP
SCL
SDA

8
7
6
5

1
2
3
4

NM34W02

DS500078-2

SO (M8) and TSSOP (MT8) Package

Connection Diagram

Top View

See Package Number

M08A and MTC08

Pin Names

A0,A1,A2 Device Address Inputs

V

SS

Ground
SDA Data I/O
SCL Clock Input

WP Write Protect
V

CC

Power Supply

Ordering Information
NM 34 W 02 LZ E XX Letter Description

Package M8 8-Pin SO8

MT8 8-Pin TSSOP

Temp. Range None 0 to 70°C

E -40 to +85°C

Voltage Operating Range Blank 4.5V to 5.5V

L 2.7V to 4.5V
LZ 2.7V to 4.5V and

<1µA Standby Current

Density 02 2K

W Full Array Write Protect

Interface 34 IIC

NM Fairchild Non-Volatile

Memory

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NM34W02 Rev. C.2

NM34W02 2K-Bit Standard 2-Wire Bus Interface Serial EEPROM

with Full Array Write Protect

Product Specifications
Absolute Maximum Ratings

Ambient Storage Temperature –65°C to +150°C
All Input or Output Voltages

with Respect to Ground 6.5V to –0.3V

Lead Temperature

(Soldering, 10 seconds) +300°C

ESD Rating 2000V min.

Operating Conditions

Ambient Operating Temperature

NM34W02 0°C to +70°C
NM34W02E -40°C to +85°C

Positive Power Supply

NM34W02 4.5V to 5.5V
NM34W02L 2.7V to 4.5V
NM34W02LZ 2.7V to 4.5V

Standard VCC (4.5V to 5.5V) DC Electrical Characteristics

Symbol Parameter Test Conditions Limits Units

Min Typ Max

(Note 1)

I

CCA

Active Power Supply Current f

SCL

= 100 kHz 0.2 1.0 mA

I

SB

Standby Current VIN = GND or V

CC

10 50 µA

I

LI

Input Leakage Current VIN = GND to V

CC

0.1 1 µA

I

LO

Output Leakage Current V

OUT

= GND to V

CC

0.1 1 µA

V

IL

Input Low Voltage –0.3 VCC x 0.3 V

V

IH

Input High Voltage VCC x 0.7 VCC + 0.5 V

V

OL

Output Low Voltage I

OL

= 3 mA 0.4 V

Low VCC (2.7V to 5.5V) DC Electrical Characteristics

Symbol Parameter Test Conditions Limits Units

Min Typ Max

(Note 1)

I

CCA

Active Power Supply Current f

SCL

= 100 kHz 0.2 1.0 mA

I

SB

Standby Current for L VIN = GND or V

CC

110µA

Standby Current for LZ VIN = GND or V

CC

0.1 1 µA

I

LI

Input Leakage Current VIN = GND to V

CC

0.1 1 µA

I

LO

Output Leakage Current V

OUT

= GND to V

CC

0.1 1 µA

V

IL

Input Low Voltage –0.3 V

CC

x 0.3 V

V

IH

Input High Voltage VCC x 0.7 VCC + 0.5 V

V

OL

Output Low Voltage IOL = 3 mA 0.4 V

Capacitance T

A

= +25°C, f = 100/400 KHz, VCC = 5V (Note 2)

Symbol Test Conditions Max Units

C

I/O

Input/Output Capacitance (SDA) V

I/O

= 0V 8 pF

C

IN

Input Capacitance (A0, A1, A2, SCL) VIN = 0V 6 pF

Note 1: Typical values are TA = 25°C and nominal supply voltage (5V).
Note 2: This parameter is periodically sampled and not 100% tested.

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NM34W02 Rev. C.2

NM34W02 2K-Bit Standard 2-Wire Bus Interface Serial EEPROM

with Full Array Write Protect

AC Conditions of Test

Input Pulse Levels VCC x 0.1 to VCC x 0.9
Input Rise and Fall Times 10 ns
Input & Output Timing Levels VCC x 0.5
Output Load 1 TTL Gate and CL = 100 pF

Read and Write Cycle Limits (Standard and Low VCC Range 2.7V - 5.5V)

Symbol Parameter 100 KHz 400 KHz Units

Min Max Min Max

f

SCL

SCL Clock Frequency 100 400 KHz

T

I

Noise Suppression Time Constant at
SCL, SDA Inputs (Minimum V

IN

100 50 ns

Pulse width)

t

AA

SCL Low to SDA Data Out Valid 0.3 3.5 0.1 0.9 µs

t

BUF

Time the Bus Must Be Free before 4.7 1.3 µs
a New Transmission Can Start

t

HD:STA

Start Condition Hold Time 4.0 0.6 µs

t

LOW

Clock Low Period 4.7 1.5 µs

t

HIGH

Clock High Period 4.0 0.6 µs

t

SU:STA

Start Condition Setup Time 4.7 0.6 µs
(for a Repeated Start Condition)

t

HD:DAT

Data in Hold Time 0 0 ns

t

SU:DAT

Data in Setup Time 250 100 ns

t

R

SDA and SCL Rise Time 1 0.3 µs

t

F

SDA and SCL Fall Time 300 300 ns

t

SU:STO

Stop Condition Setup Time 4.7 0.6 µs

t

DH

Data Out Hold Time 300 50 ns

t

WR

Write Cycle Time - NM34W02 10 10 ms

(Note 3) - NM34W02L, NM34W02LZ 15 15

Note 3: The write cycle time (tWR) is the time from a valid stop condition of a write sequence to the end of the internal erase/program cycle. During the write cycle, the
NM34W02 bus interface circuits are disabled, SDA is allowed to remain high per the bus-level pull-up resistor, and the device does not respond to its slave address.