Fairchild Semiconductor NM27LV210V250, NM27LV210V200 Datasheet

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NM27LV210 1,048,576-Bit (64K x 16) Low Voltage EPROM

NM27LV210
1,048,576-Bit (64K x 16) Low Voltage EPROM

General Description

The NM27LV210 is a high performance Low Voltage Electrical
Programmable read only memory. It is manufactured using
Fairchild’s latest EPROM technology. This technology allows the
part to operate at high speeds.

This Low Voltage and Low Power EPROM is designed with power
sensitive hand held and portable battery products in mind. This
allows for code storage of firmware for applications like notebook
computers, palm top computers, cellular phones, and HDD.

The NM27LV210 is one member of Fairchild’s growing Low
Voltage product family.

Block Diagram

July 1998

Features

■ 3.0V to 3.6V operation

■ 200 ns, 250 ns maximum access time

■ Low current operation

—20mA ICC active current @ 5 MHz
—50µA I

CC

standby current @ 5 MHz

■ Ultra low power operation
—60 µA standby power @ 3.3V
—50 mW active power @ 3.3V

■ Surface mount package option
—44-Pin PLCC

DS011376-1

© 1998 Fairchild Semiconductor Corporation

V

cc

GND
V

pp

OE

PGM

Output Enable

Chip Enable, and

Program Logic

Y

Decoder

X

Decoder

Output

Buffers

1,048,576-Bit

Cell Matrix

A

0 - A15

Address

Inputs

Data Outputs O

0 - O15

CE

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NM27LV210 1,048,576-Bit (64K x 16) Low Voltage EPROM

Connection Diagrams

PLCC Pin Configuration

Top View

Commercial Temperature Range

(0°C to +70°C) VCC = 3.3V ± 0.3

Parameter/Order Number Access Time (ns)

NM27LV210 V 200 200
NM27LV210 V 250 250

Pin Names

A0–A15 Addresses

CE Chip Enable
OE Output Enable

O0–O15 Outputs

PGM Program

XX Don’t Care (During Read)
NC No Connect

V

PP

Programming Voltage

Extended Temperature Range

(-40°C to +85°C) VCC = 3.3V ±0.3

Parameter/Order Number Access Time (ns)

NM27LV210 VE 250 250

• All packages conform to JEDEC standard.

• All versions are guaranteed to function in slower applica­tions.

• Consult the FSC representative for newly released products/
packages.

O

12

O

11

O

10

O

9

O

8

GND

NC

O

7

O

6

O

5

O

4

A

13

A

12

A

11

A

10

A

9

GND
NC
A

8

A

7

A

6

A

5

O13O14O15XX/VPPNC

NC

A15A

14

O3O2O1O

0

OE

NC

A

0A1A2A3A4

1

23456

7

8
9
10
11
12
13
14
15
16

17

4041424344

38
37
36
35
34
33
32
31
30

2221201918 282726252423

29

39

CE

VCCXX/PGM

O

12

O

11

O

10

O

9

O

8

GND

NC

O

7

O

6

O

5

O

4

A

13

A

12

A

11

A

10

A

9

GND
NC
A

8

A

7

A

6

A

5

O13O14O15XX/VPPNC

NC

A15A

14

O3O2O1O

0

OE

NC

A

0A1A2A3A4

39

4041424344

1

2
3
4
5
6
7
8
9
10

11

3435363738

32
31
30
29
28
27
26
25
24

1615141312 222120191817

23

33

CE

VCCXX/PGM

DS011376-7

DS011376-3

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NM27LV210 1,048,576-Bit (64K x 16) Low Voltage EPROM

Absolute Maximum Ratings (Note 2)

Storage Temperature -65°C to +150°C
All Input Voltages except A9 with

Respect to Ground (Note 12) -0.6V to +7V
VPP and A9 with Respect to Ground -0.6V to +14V
VCC Supply Voltage with

Respect to Ground -0.6V to +7V
ESD Protection >2000V

All Output Voltages with

Respect to Ground (Note 11) VCC + 1.0V to GND - 0.6V

Operating Range

Range Temperature V

CC

Tolerance

Commercial 0°C to +70°C 3.3 ±0.3
Extended -40°C to +85°C 3.3 ±0.3

DC Read Characteristics Over Operating Range with V

PP

= V

CC

Symbol Parameter Test Conditions Min Max Units

V

IL

Input Low Level -0.3 0.7 V

V

IH

Input High Level 2.0 VCC + 0.3 V

V

OL1

Output Low Voltage (TTL) 0.4 V

V

OH1

Output High Voltage (TTL) 2.4 V

V

OL2

Output Low Voltage (CMOS) 0.2 V

V

OH2

Output High Voltage (CMOS) VCC - 0.3 V

I

SB1

VCC Standby Current (TTL) CE = V

IH

150 µA

I

SB2

VCC Standby Current (CMOS) CE = VCC ±0.3V 50 µA

I

CC

VCC Active Current CE = OE = VIL, f = 5 MHz 20 mA

I/O = 0 µA

I

PP

VPP Supply Current VPP = V

CC

10 µA

I

LI

Input Load Current VIN = 3.3 or GND -1 1 µA

I

LO

Output Leakage Current V

OUT

= 3.3V or GND -1 10 µA

AC Read Characteristics Over Operating Range with V

PP

= V

CC

Symbol Parameter 200 250 Units

Min Max Min Max

t

ACC

Address to Output Delay 200 250

t

CE

CE to Output Delay 200 250

t

OE

OE to Output Delay 70 75

t

DF

Output Disable to Output Float 0 50 0 60 ns

(Note 3)

t

OH

Output Hold from Addresses,

(Note 3) CE or OE , Whichever 0 0

Occurred First

Capacitance (Note 3) T

A

= +25˚C, f = 1 MHz

Symbol Parameter Conditions Typ Max Units

C

IN

Input Capacitance VIN = 0V 12 20 pF

C

OUT

Output Capacitance V

OUT

= 0V 13 20 pF