Fairchild Semiconductor NM24W04EM8X, NM24W04LEM8, NM24W04LEM8X, NM24W04LMT8, NM24W04N Datasheet

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NM24Wxx Rev. C.2
NM24Wxx 2K/4K/8K/16K-Bit Standard 2-Wire Bus Interface
Serial EEPROM with Full Array Write Protect
PRELIMINARY
March 1999
© 1999 Fairchild Semiconductor Corporation
General Description
The NM24Wxx devices are 2048/4096/8192/16,384 bits, respec­tively, of CMOS non-volatile electrically erasable memory. These devices conform to all specifications in the IIC 2-wire protocol and are designed to minimize device pin count, and simplify PC board layout requirements.
The entire ememory can be disabled (Write Protected) by con­necting the WP pin to VCC. The memory then becomes unalterable unless WP is switched to VSS.
This communications protocol uses CLOCK (SCL) and DATA I/O (SDA) lines to synchronously clock data between the master (for example a microprocessor) and the slave EEPROM device(s). The Standard IIC protocol allows for a maximum of 16K of EEPROM memory which is supported by Fairchild's family in 2K, 4K, 8K, and 16K devices, allowing the user to configure the memory as the application requires with any combination of EEPROMs.
Fairchild EEPROMs are designed and tested for applications requiring high endurance, high reliability and low power consump­tion.
Block Diagram
DS500074-1
H.V. GENERATION
TIMING &CONTROL
E2PROM
ARRAY
16
YDEC
8
DATA REGISTER
XDEC
CONTROL
LOGIC
WORD ADDRESS COUNTER
SLAVE ADDRESS
REGISTER &
COMPARATOR
START
STOP
LOGIC
START CYCLE
16/ 32/ 64/
128/
4
4
CK
D
IN
R/W
LOAD INC
SDA
V
SS
V
CC
WP
D
OUT
A2 A1 A0
Device Address Bits
0/1/2/3
SCL
Features
Hardware Write Protect for entire memory
Low Power CMOS
200µA active current typical 10µA standby current typical 1µA standby typical (L)
0.1µA standby typical (LZ)
IIC Compatible interface — Provides bidirectional data transfer protocol
Sixteen byte page write mode — Minimizes total write time per byte
Self timed write cycle — Typical write cycle time of 6ms
Endurance: 1,000,000 data changes
Data retention greater than 40 years
Packages available: 8-pin DIP, 8-pin SO, and 8-pin TSSOP
Available in three temperature ranges
- Commercial: 0° to +70°C
- Extended (E): -40° to +85C
- Automotive (V): -40° to +125°C
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NM24Wxx Rev. C.2
NM24Wxx 2K/4K/8K/16K-Bit Standard 2-Wire Bus Interface
Serial EEPROM with Full Array Write Protect
Connection Diagrams
Dual-In-Line Package (N), SO Package (M8), and TSSOP Package (MT8)
Top View
See Package Number N08E (N), M08A (M8), and MTC08 (MT8)
Pin Names
A0,A1,A2 Device Address Inputs
V
SS
Ground SDA Data I/O SCL Clock Input
WP Write Protect V
CC
Power Supply
NC No Connect
Ordering Information NM 24 W XX LZ E XX Letter Description
Package N 8-Pin DIP
M8 8-Pin SO8 MT8 8-Pin TSSOP
Temp. Range None 0 to 70°C
E -40 to +85°C V -40°C to +125°C
Voltage Operating Range Blank 4.5V to 5.5V
L 2.7V to 4.5V LZ 2.7V to 4.5V and
<1µA Standby Current
Density 02 2K
04 4K 08 8K 16 16K
W Total Array Write Protect
Interface 24 IIC
NM Fairchild Non-Volatile
Memory
A0 A1 A2
V
SS
V
CC
WP SCL SDA
8 7 6 5
1 2 3 4
DS500074-3
NM24W02
NC
A1 A2
V
SS
V
CC
WP SCL SDA
8 7 6 5
1 2 3 4
NC NC
A2
V
SS
V
CC
WP SCL SDA
8 7 6 5
1 2 3 4
NC NC NC
V
SS
V
CC
WP SCL SDA
8 7 6 5
1 2 3 4
NM24W04 NM24W08 NM24W16
DS500074-4 DS500074-18DS500074-2
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NM24Wxx Rev. C.2
NM24Wxx 2K/4K/8K/16K-Bit Standard 2-Wire Bus Interface
Serial EEPROM with Full Array Write Protect
Product Specifications Absolute Maximum Ratings
Ambient Storage Temperature –65°C to +150°C All Input or Output Voltages
with Respect to Ground 6.5V to –0.3V
Lead Temperature
(Soldering, 10 seconds) +300°C
ESD Rating 2000V min.
Operating Conditions
Ambient Operating Temperature
NM24Wxx 0°C to +70°C NM24WxxE -40°C to +85°C NM24WxxV -40°C to +125°C
Positive Power Supply
NM24Wxx 4.5V to 5.5V NM24WxxL 2.7V to 4.5V NM24WxxLZ 2.7V to 4.5V
Standard VCC (4.5V to 5.5V) DC Electrical Characteristics
Symbol Parameter Test Conditions Limits Units
Min Typ Max
(Note 1)
I
CCA
Active Power Supply Current f
SCL
= 100 kHz 0.2 1.0 mA
I
SB
Standby Current VIN = GND or V
CC
10 50 µA
I
LI
Input Leakage Current VIN = GND to V
CC
0.1 1 µA
I
LO
Output Leakage Current V
OUT
= GND to V
CC
0.1 1 µA
V
IL
Input Low Voltage –0.3 VCC x 0.3 V
V
IH
Input High Voltage VCC x 0.7 VCC + 0.5 V
V
OL
Output Low Voltage I
OL
= 3 mA 0.4 V
Low VCC (2.7V to 5.5V) DC Electrical Characteristics
Symbol Parameter Test Conditions Limits Units
Min Typ Max
(Note 1)
I
CCA
Active Power Supply Current f
SCL
= 100 kHz 0.2 1.0 mA
I
SB
Standby Current for L VIN = GND or V
CC
110µA
Standby Current for LZ VIN = GND or V
CC
0.1 1 µA
I
LI
Input Leakage Current VIN = GND to V
CC
0.1 1 µA
I
LO
Output Leakage Current V
OUT
= GND to V
CC
0.1 1 µA
V
IL
Input Low Voltage –0.3 V
CC
x 0.3 V
V
IH
Input High Voltage VCC x 0.7 VCC + 0.5 V
V
OL
Output Low Voltage IOL = 3 mA 0.4 V
Capacitance T
A
= +25°C, f = 100/400 KHz, VCC = 5V (Note 2)
Symbol Test Conditions Max Units
C
I/O
Input/Output Capacitance (SDA) V
I/O
= 0V 8 pF
C
IN
Input Capacitance (A0, A1, A2, SCL) VIN = 0V 6 pF
Note 1: Typical values are TA = 25°C and nominal supply voltage (5V). Note 2: This parameter is periodically sampled and not 100% tested.
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NM24Wxx Rev. C.2
NM24Wxx 2K/4K/8K/16K-Bit Standard 2-Wire Bus Interface
Serial EEPROM with Full Array Write Protect
AC Conditions of Test
Input Pulse Levels VCC x 0.1 to VCC x 0.9 Input Rise and Fall Times 10 ns Input & Output Timing Levels VCC x 0.5 Output Load 1 TTL Gate and CL = 100 pF
Read and Write Cycle Limits (Standard and Low VCC Range 2.7V - 4.5V)
Symbol Parameter 100 KHz 400 KHz Units
Min Max Min Max
f
SCL
SCL Clock Frequency 100 400 KHz
T
I
Noise Suppression Time Constant at SCL, SDA Inputs (Minimum V
IN
100 50 ns
Pulse width)
t
AA
SCL Low to SDA Data Out Valid 0.3 3.5 0.1 0.9 µs
t
BUF
Time the Bus Must Be Free before 4.7 1.3 µs a New Transmission Can Start
t
HD:STA
Start Condition Hold Time 4.0 0.6 µs
t
LOW
Clock Low Period 4.7 1.5 µs
t
HIGH
Clock High Period 4.0 0.6 µs
t
SU:STA
Start Condition Setup Time 4.7 0.6 µs (for a Repeated Start Condition)
t
HD:DAT
Data in Hold Time 0 0 ns
t
SU:DAT
Data in Setup Time 250 100 ns
t
R
SDA and SCL Rise Time 1 0.3 µs
t
F
SDA and SCL Fall Time 300 300 ns
t
SU:STO
Stop Condition Setup Time 4.7 0.6 µs
t
DH
Data Out Hold Time 300 50 ns
t
WR
Write Cycle Time - NM24Wxx 10 10 ms
(Note 3) - NM24WxxL, NM24WxxLZ 15 15
Note 3: The write cycle time (tWR) is the time from a valid stop condition of a write sequence to the end of the internal erase/program cycle. During the write cycle, the NM24Wxx bus interface circuits are disabled, SDA is allowed to remain high per the bus-level pull-up resistor, and the device does not respond to its slave address.
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NM24Wxx Rev. C.2
NM24Wxx 2K/4K/8K/16K-Bit Standard 2-Wire Bus Interface
Serial EEPROM with Full Array Write Protect
Bus Timing
Background Information (IIC Bus)
As mentioned, the IIC bus allows synchronous bidirectional com­munication between Transmitter/Receiver using the SCL (clock) and SDA (Data I/O) lines. All communication must be started with a valid START condition, concluded with a STOP condition and acknowledged by the Receiver with an ACKNOWLEDGE condi­tion.
In addition, since the IIC bus is designed to support other devices such as RAM, EPROMs, etc., a devce type identifier string must follow the START condition. For EEPROMs, this 4-bit string is 1010 and is the first 4 bits in the slave address.
As shown below, the EEPROMs on the IIC bus may be configured in any manner required, and for the Standard IIC protocol, the total memory addressed can not exceed 16K (16,384 bits). EEPROM memory address programming is controlled by 2 methods:
• Hardware configuring the A0, A1, and A2 pins (Device Address pins) with pull-up or pull-down to resistors. All unused pins must be grounded (tied to VSS).
• Software addressing the required PAGE BLOCK within the device memory array (as sent in the Slave Address string).
Addressing an EEPROM memory location involves sending a command string with the following information:
[DEVICE TYPE]—[DEVICE ADDRESS]—[PAGE BLOCK ADDRESS]—[BYTE ADDRESS]
DEFINITIONS
WORD 8 bits of data PAGE 16 sequential addresses (one byte
each) that may be programmed during a 'Page Write' programming cycle
PAGE BLOCK 2,048 (2K) bits organized into 16
pages of addressable memory. (8 bits) x (16 bytes) x (16 pages) = 2,048 bits
MASTER Any IIC device CONTROLLING the
transfer of data (such as a micropro­cessor)
SLAVE Device being controlled (EEPROMs
are always considered Slaves)
TRANSMITTER Device currently SENDING data on
the bus (may be either a Master or Slave).
RECEIVER Device currently receiving data on the
bus (Master or Slave)
Example of 16K of Memory on 2-Wire Bus
Note: The SDA pull-up resistor is required due to the open-drain/open collector output of IIC bus devices.
The SCL pull-up resistor is recommended because of the normal SCL line inactive 'high' state. It is recommended that the total line capacitance be less than 400pF. Specific timing and addressing considerations are described in greater detail in the following sections.
DS500074-5
DS500074-6
SDA
SCL
NM24W02
V
CC
V
CC
A0 A1 A2 V
SS
NM24W02
A0 A1 A2 V
SS
NM24W04
A0 A1 A2 V
SS
NM24W08
A0 A1 A2 V
SS
V
CC
To V
CC
or V
SS
To V
CC
or V
SS
To V
CC
or V
SS
To V
CC
or V
SS
V
CC
V
CC
V
CC
SCL
SDA
IN
SDA OUT
t
F
t
LOW
t
HIGH
t
R
t
LOW
t
AA
t
DH
t
BUF
t
SU:STA
t
HD:DAT
t
HD:STA
t
SU:DAT
t
SU:STO
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