Fairchild Semiconductor NM24C32LM8, NM24C32N, NM24C32M8, NM24C32EN, NM24C32EM8 Datasheet

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NM24C32 Rev. C.2
NM24C32 32K-Bit Extended 2-Wire Bus Interface
Serial EEPROM with Write Protect
PRELIMINARY
March 1999
© 1999 Fairchild Semiconductor Corporation
General Description:
The NM24C32 devices are 32,768 bits of CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options, and they conform to all specifications in the Extended IIC 2-wire protocol. Furthermore, they are designed to minimize device pin count and simplify PC board layout requirements.
The upper half of the memory can be disabled (Write Protection) by connecting the WP pin to VCC. This section of memory then becomes ROM.
This communication protocol uses CLOCK (SCL) and DATA I/O (SDA) lines to synchronously clock data between the master (for example a microprocessor) and the slave EEPROM device(s).
Fairchild EEPROMs are designed and tested for applications requiring high endurance, high reliability, and low power con­sumption.
Block Diagram
Features:
Extended operating voltage 2.7V – 5.5V
400 KHz clock frequency (F) at 2.7V - 5.5V
200µA active current typical
10µA standby current typical 1µA standby typical (L)
0.1µA standby typical (LZ)
IIC compatible interface – Provides bidirectional data transfer protocol
32 byte page write mode – Minimizes total write time per byte
Self timed write cycle Typical write cycle time of 6ms
Hardware write protect for upper block
Endurance: 1,000,000 data changes
Data retention greater than 40 years
Packages available: 8-pin SO, 8-pin DIP
Low VCC programming lockout (3.8V - on Standard V
CC
devices only).
DS500073-1
H.V. GENERATION
TIMING &CONTROL
E2PROM
ARRAY
YDEC
DATA REGISTER
XDEC
CONTROL
LOGIC
WORD ADDRESS COUNTER
SLAVE ADDRESS
REGISTER &
COMPARATOR
START
STOP
LOGIC
WRITE
LOCKOUT
START CYCLE
CK
D
IN
R/W
LOAD INC
SDA
SCL
WP
V
CC
D
OUT
A2 A1 A0
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NM24C32 Rev. C.2
NM24C32 32K-Bit Extended 2-Wire Bus Interface
Serial EEPROM with Write Protect
Connection Diagram
Dual-In-Line Package (N)
and 8-Pin SO Package (M8)
Top View
See Package Number N08E and M08A
Pin Names
A0, A1, A2 Device Address Input
V
SS
Ground SDA Data I/O SCL Clock Input
WP Write Protect V
CC
Power Supply
Ordering Information NM 24 C XX F LZ E XX Letter Description
Package N 8-Pin DIP
M8 8-Pin SOIC
Temp. Range None 0 to 70°C
V -40 to +125°C E -40 to +85°C
Voltage Operating Range Blank 4.5V to 5.5V
L 2.7V to 4.5V LZ 2.7V to 4.5V and
<1µA Standby Current
SCL Clock Frequency Blank 100KHz
F 400KHz
Density 32 32K with Write Protect
C CMOS
Interface 24 IIC
NM Fairchild Non-Volatile
Memory
A0 A1 A2
V
SS
V
CC
WP SCL SDA
8 7 6 5
1 2 3 4
NM24C32
DS500073-2
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NM24C32 Rev. C.2
NM24C32 32K-Bit Extended 2-Wire Bus Interface
Serial EEPROM with Write Protect
Product Specifications Absolute Maximum Ratings
Ambient Storage Temperature –65°C to +150°C All Input or Output Voltages
with Respect to Ground 6.5V to –0.3V
Lead Temperature
(Soldering, 10 seconds) +300°C
ESD Rating 2000V min.
Operating Conditions
Ambient Operating Temperature
NM24C32 0°C to +70°C NM24C32E -40°C to +85°C NM24C32V -40°C to +125°C
Positive Power Supply
NM24C32 4.5V to 5.5V NM24C32L 2.7V to 4.5V NM24C32LZ 2.7V to 4.5V
Standard VCC (4.5V to 5.5V) DC Electrical Characteristics
Symbol Parameter Test Conditions Limits Units
Min
Typ (Note 1)
Max
I
CCA
Active Power Supply Current f
SCL
= 100 kHz 0.2 1.0 mA
I
SB
Standby Current VIN = GND or V
CC
10 50 µA
I
LI
Input Leakage Current VIN = GND to V
CC
0.1 1 µA
I
LO
Output Leakage Current V
OUT
= GND to V
CC
0.1 1 µA
V
IL
Input Low Voltage –0.3 VCC x 0.3 V
V
IH
Input High Voltage VCC x 0.7 VCC + 0.5 V
V
OL
Output Low Voltage I
OL
= 3 mA 0.4 V
Low VCC (2.7V to 4.5V) DC Electrical Characteristics
Symbol Parameter Test Conditions Limits Units
Min
Typ (Note 1)
Max
I
CCA
Active Power Supply Current f
SCL
= 100 kHz 0.2 1.0 mA
I
SB
Standby Current for L VIN = GND or V
CC
110µA
(Note 1) Standby Current for LZ VIN = GND or V
CC
0.1 1 µA
I
LI
Input Leakage Current VIN = GND to V
CC
0.1 1 µA
I
LO
Output Leakage Current V
OUT
= GND to V
CC
0.1 1 µA
V
IL
Input Low Voltage –0.3 V
CC
x 0.3 V
V
IH
Input High Voltage VCC x 0.7 VCC + 0.5 V
V
OL
Output Low Voltage IOL = 3 mA 0.4 V
Capacitance T
A
= +25°C, f = 100/400 KHz, VCC = 5V (Note 2)
Symbol Test Conditions Max Units
C
I/O
Input/Output Capacitance (SDA) V
I/O
= 0V 8 pF
C
IN
Input Capacitance (A0, A1, A2, SCL) VIN = 0V 6 pF
Note 1: Typical values are for TA = 25°C and nominal supply voltage (5V). Note 2: This parameter is periodically sampled and not 100% tested.
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NM24C32 Rev. C.2
NM24C32 32K-Bit Extended 2-Wire Bus Interface
Serial EEPROM with Write Protect
AC Conditions of Test
Input Pulse Levels VCC x 0.1 to VCC x 0.9 Input Rise and Fall Times 10 ns Input & Output Timing Levels VCC x 0.5 Output Load 1 TTL Gate and CL = 100 pF
Read and Write Cycle Limits (Standard and Low VCC Range - 2.7V-5.5V)
Symbol Parameter 100 KHz 400 KHz Units
Min Max Min Max
f
SCL
SCL Clock Frequency 100 400 kHz
T
I
Noise Suppression Time Constant at SCL, SDA Inputs (Minimum V
IN
100 50 ns
Pulse width)
t
AA
SCL Low to SDA Data Out Valid 0.3 3.5 0.1 0.9 µs
t
BUF
Time the Bus Must Be Free before 4.7 1.3 µs a New Transmission Can Start
t
HD:STA
Start Condition Hold Time 4.0 0.6 µs
t
LOW
Clock Low Period 4.7 1.5 µs
t
HIGH
Clock High Period 4.0 0.6 µs
t
SU:STA
Start Condition Setup Time 4.7 0.6 µs (for a Repeated Start Condition)
t
HD:DAT
Data in Hold Time 0 0 ns
t
SU:DAT
Data in Setup Time 250 100 ns
t
R
SDA and SCL Rise Time 1 0.3 µs
t
F
SDA and SCL Fall Time 300 300 ns
t
SU:STO
Stop Condition Setup Time 4.7 0.6 µs
t
DH
Data Out Hold Time 300 50 ns
t
WR
Write Cycle Time - NM24C32 10 10 ms
(Note 3) - NM24C32L, NM24C32LZ 15 15
Note 3: The write cycle time (tWR) is the time from a valid stop condition of a write sequence to the end of the internal erase/program cycle. During the write cycle, the NM24C32 bus interface circuits are disabled, SDA is allowed to remain high per the bus-level pull-up resistor, and the device does not respond to its slave address
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