Fairchild Semiconductor NDT2955 Datasheet
NDT2955
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
September 1996
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
-2.5A, -60V. R
High density cell design for extremely low R
= 0.3Ω @ VGS = -10V.
DS(ON)
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and DC motor control.
_______________________________________________________________________________________________________
D
D S
G
D
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
A
Symbol Parameter NDT2955 Units
V
DSS
V
GSS
I
D
Drain-Source Voltage -60 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1a) -2.5 A
- Pulsed -15
P
D
TJ,T
Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Temperature Range -65 to 150 °C
STG
3 W
1.3
1.1
THERMAL CHARACTERISTICS
R
θ
R
θ
* Order option J23Z for cropped center drain lead.
© 1997 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
JA
Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
JC
NDT2955 Rev. B2
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -60 V
Zero Gate Voltage Drain Current VDS = -60 V, V
= 0 V -10 µA
GS
TJ = 125oC -100 µA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = -250 µA
TJ = 125oC
VGS = -10 V, ID = -2.5 A
TJ = 125oC
-2 -2.4 -4 V
-0.8 -2 -2.6
0.21 0.3
0.3 0.45
Ω
VGS = -4.5 V, ID = -2 A 0.36 0.5
I
g
D(on)
FS
On-State Drain Current
Forward Transconductance
VGS = -10 V, VDS = -5 V
VDS = -10 V, ID = -2.5 A
-12 A
3.5 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = -25 V, VGS = 0 V,
Output Capacitance 140 pF
f = 1.0 MHz
570 pF
Reverse Transfer Capacitance 40 pF
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
Turn - On Delay Time
Turn - On Rise Time 20 40 ns
VDD = -30 V, ID = -1 A,
V
= -10 V, R
GEN
GEN
= 6 Ω
Turn - Off Delay Time 20 40 ns
Turn - Off Fall Time 5 20 ns
g
gs
gd
Total Gate Charge VDS = -30 V,
Gate-Source Charge 2 5 nC
ID = -2.5 A, VGS = -10 V
Gate-Drain Charge 4 8 nC
8 15 ns
16 25 nC
NDT2955 Rev. B2
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