Fairchild Semiconductor NDS9956 Datasheet
February 1996
N
NDS9956A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect
transistors are produced using National's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as DC/DC conversion and DC motor
control where fast switching, low in-line power loss, and
resistance to transients are needed.
________________________________________________________________________________
3.7A, 30V. R
High density cell design for extremely low R
= 0.08Ω @ VGS = 10V
DS(ON)
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
4
3
2
1
Absolute Maximum Ratings T
= 25°C unless otherwise noted
A
5
6
7
8
Symbol Parameter NDS9956A Units
V
DSS
V
GSS
I
D
Drain-Source Voltage 30 V
Gate-Source Voltage ± 20 V
Drain Current - Continuous (Note 1a) ± 3.7 A
- Pulsed ± 15
P
D
Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ,T
Operating and Storage Temperature Range -55 to 150 °C
STG
THERMAL CHARACTERISTICS
R
θ
R
θ
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
JA
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
JC
NDS9956A.SAM
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Zero Gate Voltage Drain Current
VDS = 24 V, V
GS
= 0 V
2 µA
TJ = 55°C
25 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100 nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 2.8 V
TJ = 125°C 0.7 1.2 2.2
R
DS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 2.2 A
TJ = 125°C
0.06 0.08
0.08 0.13
Ω
VGS = 4.5 V, ID = 1.0 A 0.08 0.11
0.11 0.18
15 A
3.5
6 S
I
g
D(on)
TJ = 125°C
On-State Drain Current
VGS = 10 V, VDS = 10 V
VGS = 4.5 V, VDS = 10 V
FS
Forward Transconductance
VDS = 15 V, ID = 3.7 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 225 pF
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance 85 pF
320 pF
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 10 V, ID = 1 A,
V
= 10 V, R
Turn - On Rise Time 13 20 ns
GEN
GEN
= 6 Ω
10 20 ns
Turn - Off Delay Time 21 50 ns
Turn - Off Fall Time 5 50 ns
Total Gate Charge VDS = 10 V,
Gate-Source Charge 1.5 nC
ID = 3.7 A, VGS = 10 V
9.5 27 nC
Gate-Drain Charge 3.3 nC
NDS9956A.SAM
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