Fairchild Semiconductor NDS9953A Datasheet
February 1996
NDS9953A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
________________________________________________________________________________
-2.9A, -30V. R
High density cell design for extremely low R
= 0.13Ω @ V
DS(ON)
= -10V.
GS
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
4
3
2
1
Absolute Maximum Ratings T
= 25°C unless otherwise noted
A
5
6
7
8
Symbol Parameter NDS9953A Units
V
DSS
V
GSS
I
D
Drain-Source Voltage -30 V
Gate-Source Voltage ± 20 V
Drain Current - Continuous (Note 1a) ± 2.9 A
- Pulsed ± 10
P
D
Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ,T
Operating and Storage Temperature Range -55 to 150 °C
STG
THERMAL CHARACTERISTICS
R
θ
R
θ
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
JA
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
JC
© 1997 Fairchild Semiconductor Corporation
NDS9953A.SAM
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V
Zero Gate Voltage Drain Current
VDS = -24 V, V
GS
= 0 V
-2 µA
TJ = 55°C
-25 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100 nA
ON CHARACTERISTICS (Note 2)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 -1.6 -2.8 V
-0.85 -1.25 -2.5
0.11 0.13
Static Drain-Source On-Resistance
TJ = 125°C
VGS = -10 V, ID = -1.0 A
Ω
TJ = 125°C 0.15 0.21
0.17 0.2
0.24 0.32
-1.5
I
g
D(on)
VGS = -4.5 V, ID = -0.5 A
TJ = 125°C
On-State Drain Current VGS = -10 V, VDS = -5 V -10 A
VGS = -4.5 V, VDS = -5 V
FS
Forward Transconductance VDS = -15 V, ID = -2.9 A 4 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 260 pF
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance 100 pF
350 pF
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = -10 V, ID = -1 A,
V
= -10 V, R
Turn - On Rise Time 21 40 ns
GEN
GEN
= 6 Ω
9 40 ns
Turn - Off Delay Time 21 90 ns
Turn - Off Fall Time 8 50 ns
Total Gate Charge VDS = -10 V,
Gate-Source Charge 1.6 nC
ID = -2.9 A, VGS = -10 V
10 25 nC
Gate-Drain Charge 3.4 nC
NDS9953A.SAM
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
t
rr
Notes:
1. R
P
design while R
D
Typical R
Maximum Continuous Drain-Source Diode Forward Current -1.2 A
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -1.25 A
(Note 2)
-0.8 -1.3 V
Reverse Recovery Time VGS = 0 V, IF = -1.25 A, dIF/dt = 100 A/µs 100 ns
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JA
θ
(t)
is determined by the user's board design.
CA
θ
T
−T
T
−T
A
J
=
R
(t)
θJ A
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
JA
θ
a. 78oC/W when mounted on a 0.5 in2 pad of 2oz cpper.
b. 125oC/W when mounted on a 0.02 in2 pad of 2oz cpper.
c. 135oC/W when mounted on a 0.003 in2 pad of 2oz cpper.
1a
=
R
θJ C+RθCA
A
J
2
= I
(t) × R
DS(ON ) T
D
(t)
J
1b
1c
is guaranteed by
JC
θ
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS9953A.SAM
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