Fairchild Semiconductor NDS9933A Datasheet

January 1999

NDS9933A

Dual P-Channel Enhancement Mode Field Effect Transistor

NDS9933A

General Description

This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage apllications such as DC motor control and DC/ DC conversion where fast switching,low in-line power loss, and resistance to transients are needed.

D2

D1

G1

S2

SO-8

G1

S1

Absolute Maximum Ratings

TA = 25°C unless otherwise noted

Features

• -2.8 A, -20 V. R

R

• High density cell design for extremely low R

= 0.14 Ω @ V

DS(on)

= 0.19 Ω @ V

DS(on)

= 0.20 Ω @ V

DS(on)

= -4.5 V

GS

= -2.7 V

GS

= -2.5 V.

GS

DS(on)

• High power and current handling capability in a

widely used surface mount package.

• Dual MOSFET in surface mount package.

5 6

7

8

4

3 2

1

.

Symbol Parameter NDS9933A Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage -20 V Gate-Source Voltage Drain Current - Continuous

- Pulsed -10 Power Dissipation for Dual Operat i on 2 Power Dissipation for Si ngl e Operat i on

Operating and Storage Junction Temperature Range -55 to +150

(Note 1a)

(Note 1a) (Note 1b)

(Note 1c)

8V

±

-2.8 A

1.6 1

0.9

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, J unc tion-to-Ambient Thermal Resistance, J unc tion-to-Case

(Note 1a) (Note 1)

78 40

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

NDS9933A NDS9933A 13’’ 12mm 2500 units

1999 Fairchild Semiconductor Corporation

W

C

°

C/W

°

C/W

°

NDS9933A Rev. A

NDS9933A

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics

BV

DSS

BV

∆

T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

∆

GS(th)

V

∆

T

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

J

V

= 0 V, ID = -250 µA

GS

= -250 µA, Referenced to 25°C

I

D

-20 V

-25

Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA

(Note 2)

Gate Threshold Voltage Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source On-Resistance

V

= VGS, ID = -250 µA

DS

I

= -250 µA, Referenced to 25°C

D

VGS = -4.5 V, ID = -2.8 A

= -4.5 V, ID = -2.8A,TJ=125°C

V

GS

= -2.7 V, ID = -1.5 A

V

GS

= -2.5 V, ID = -1.5 A

V

GS

-0.4 -0.65 -1 V 4

0.10 5

0.15 0

0.13 5

0.14 0

On-State Drain Current VGS = -4.5 V, VDS = -5 V -10 A Forward Transconductance VDS = -5 V, ID = -2.8 A 6.5 S

0.140

0.240

0.190

0.200

mV/°C

µ

A

mV/°C

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 405 pF Output Capacitance 170 pF Reverse Transfer Capacitance

V

= -10 V, VGS = 0 V,

DS

f = 1.0 MHz

45 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time 6.5 13 ns Turn-On Rise Time 20 35 ns Turn-Off Delay Time 31 50 ns Turn-Off Fall Time Total Gate Charge 6 8.5 nC Gate-Source Charge 0.8 nC Gate-Drain Charge

(Note 2)

V

= -5 V, ID = -1 A,

DD

= -4.5 V, R

V

GS

V

= -5 V, ID = -2.8 A,

DS

= -4.5 V,

V

GS

GEN

= 6

Ω

21 35 ns

1.3 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes: 1: R

the drain pins. R

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current -1.3 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of

θJA

is guaranteed by design while R

θJC

a. 78OC/W on a 0.5 in

pad of 2oz copper.

is determined by the user's board design.

θJA

2

(Note 2)

O

C/W on a 0.02 in

b. 125

pad of 2oz copper.

-0.78 -1.2 V

2

c. 135OC/W on a 0.003 in

pad of 2oz copper.

NDS9933A Rev. A

2

T ypical Characteristics

NDS9933A

15

V = -4.5V

GS

12

9

6

3

D

-I , DRAIN-SOURCE CURRENT (A) 0

012345

-4.0

-V , DRAIN-SOURCE VOLTAGE (V)

-3.5

-3.0

-2.7

-2.5

-2.0

-1.5

DS

2

1.8

V = -2.0V

GS

1.6

1.4

1.2

DS(ON)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.8 0246810

-2.5

-2.7

-3.0

-I , DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation

with Drain Current and Gate V oltage.

1.6

I = -2.8A

D

V = -4.5V

GS

1.4

1.2

1

DS(ON)

0.8

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

0.5

0.4

0.3

0.2

0.1

DS(ON)

R ,ON-RESISTANCE(OHM)

0

12345

-V ,GATE TO SOURCE VOLTAGE (V)

GS

T = 125°C

J

-3.5

25°C

-4.0

-4.5

I = -1.4A

D

Figure 3. On-Resistance Variation

with Temperature.

10

V = -5V

DS

8

6

4

D

-I , DRAIN CURRENT (A)

2

0

01234

-V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

A

25°C

125°C

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

10

V = 0V

GS

1

0.1

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

T = 125°C

J

25°C

-55°C

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

NDS9933A Rev. A