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January 1999
NDS9933A
Dual P-Channel Enhancement Mode Field Effect Transistor
NDS9933A
General Description
This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize on-state resistance and provide superior
switching performance.
These devices are particularly suited for low voltage
apllications such as DC motor control and DC/
DC conversion where fast switching,low in-line
power loss, and resistance to transients are
needed.
D2
D2
D1
D1
G1
S2
SO-8
G1
S1
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Features
• -2.8 A, -20 V. R
R
R
• High density cell design for extremely low R
= 0.14 Ω @ V
DS(on)
= 0.19 Ω @ V
DS(on)
= 0.20 Ω @ V
DS(on)
= -4.5 V
GS
= -2.7 V
GS
= -2.5 V.
GS
DS(on)
• High power and current handling capability in a
widely used surface mount package.
• Dual MOSFET in surface mount package.
5
6
7
8
4
3
2
1
.
Symbol Parameter NDS9933A Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed -10
Power Dissipation for Dual Operat i on 2
Power Dissipation for Si ngl e Operat i on
Operating and Storage Junction Temperature Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
8V
±
-2.8 A
1.6
1
0.9
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, J unc tion-to-Ambient
Thermal Resistance, J unc tion-to-Case
(Note 1a)
(Note 1)
78
40
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
NDS9933A NDS9933A 13’’ 12mm 2500 units
1999 Fairchild Semiconductor Corporation
W
C
°
C/W
°
C/W
°
NDS9933A Rev. A
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NDS9933A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
DSS
BV
∆
T
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
∆
GS(th)
V
∆
T
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
V
= 0 V, ID = -250 µA
GS
= -250 µA, Referenced to 25°C
I
D
-20 V
-25
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
V
= VGS, ID = -250 µA
DS
I
= -250 µA, Referenced to 25°C
D
VGS = -4.5 V, ID = -2.8 A
= -4.5 V, ID = -2.8A,TJ=125°C
V
GS
= -2.7 V, ID = -1.5 A
V
GS
= -2.5 V, ID = -1.5 A
V
GS
-0.4 -0.65 -1 V
4
0.10
5
0.15
0
0.13
5
0.14
0
On-State Drain Current VGS = -4.5 V, VDS = -5 V -10 A
Forward Transconductance VDS = -5 V, ID = -2.8 A 6.5 S
0.140
0.240
0.190
0.200
mV/°C
µ
A
mV/°C
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 405 pF
Output Capacitance 170 pF
Reverse Transfer Capacitance
V
= -10 V, VGS = 0 V,
DS
f = 1.0 MHz
45 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time 6.5 13 ns
Turn-On Rise Time 20 35 ns
Turn-Off Delay Time 31 50 ns
Turn-Off Fall Time
Total Gate Charge 6 8.5 nC
Gate-Source Charge 0.8 nC
Gate-Drain Charge
(Note 2)
V
= -5 V, ID = -1 A,
DD
= -4.5 V, R
V
GS
V
= -5 V, ID = -2.8 A,
DS
= -4.5 V,
V
GS
GEN
= 6
Ω
21 35 ns
1.3 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1: R
the drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -1.3 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of
θJA
is guaranteed by design while R
θJC
a. 78OC/W on a 0.5 in
pad of 2oz copper.
is determined by the user's board design.
θJA
2
(Note 2)
O
C/W on a 0.02 in
b. 125
pad of 2oz copper.
-0.78 -1.2 V
2
c. 135OC/W on a 0.003 in
pad of 2oz copper.
NDS9933A Rev. A
2
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T ypical Characteristics
NDS9933A
15
V = -4.5V
GS
12
9
6
3
D
-I , DRAIN-SOURCE CURRENT (A)
0
012345
-4.0
-V , DRAIN-SOURCE VOLTAGE (V)
-3.5
-3.0
-2.7
-2.5
-2.0
-1.5
DS
2
1.8
V = -2.0V
GS
1.6
1.4
1.2
DS(ON)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0246810
-2.5
-2.7
-3.0
-I , DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation
with Drain Current and Gate V oltage.
1.6
I = -2.8A
D
V = -4.5V
GS
1.4
1.2
1
DS(ON)
0.8
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0.5
0.4
0.3
0.2
0.1
DS(ON)
R ,ON-RESISTANCE(OHM)
0
12345
-V ,GATE TO SOURCE VOLTAGE (V)
GS
T = 125°C
J
-3.5
25°C
-4.0
-4.5
I = -1.4A
D
Figure 3. On-Resistance Variation
with Temperature.
10
V = -5V
DS
8
6
4
D
-I , DRAIN CURRENT (A)
2
0
01234
-V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
A
25°C
125°C
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
V = 0V
GS
1
0.1
0.01
0.001
S
-I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
T = 125°C
J
25°C
-55°C
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
NDS9933A Rev. A