Fairchild Semiconductor NDS9430 Datasheet
May 2002
NDS9430
30V P-Channel PowerTrench
MOSFET
NDS9430
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been opt imized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
• Power management
• Load switch
• Battery protection
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
• –5.3 A, –30 V R
R
• Low gate charge
• Fast switching speed
• High performance trench te chnology for extremely
low R
• High power and current handling capability
DS(ON)
5
6
7
8
= 60 mΩ @ VGS = –10 V
DS(ON)
=100 mΩ @ VGS = –4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage –30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) –5.3 A
– Pulsed –20
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +175
(Note 1c)
±20
1.2
1
V
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1c) 125
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2002 Fairchild Semiconductor Corporation
NDS9430 NDS9430 13’’ 12mm 2500 units
°C/W
NDS9430 Rev B
NDS9430
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
= 0 V, ID = –250 µA
V
GS
= –250 µA, Referenced to 25°C
I
D
–30 V
–23
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
D(on)
= VGS, ID = –250 µA
V
DS
I
= –250 µA, Referenced to 25°C
D
VGS = –10 V, ID = –5.3 A
= –4.5 V, ID = –2 A
V
GS
= –10 V, ID = –5.3 A,TJ=125°C
V
GS
gFS Forward Transconductance VDS = –5 V, ID = –5.3 A 10 S
–1 –1.7 –3 V
4.5
42
65
100
57
60
73
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 528 pF
iss
C
Output Capacitance 132 pF
oss
C
Reverse Transfer Capacitance
rss
= –15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
70 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 7 14 ns
d(on)
tr Turn–On Rise Time 13 24 ns
t
Turn–Off Delay Time 14 25 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 10 14 nC
Qgs Gate–Source Charge 2.2 nC
Qgd Gate–Drain Charge
= –15 V, ID = –1 A,
V
DD
= –10 V, R
V
GS
V
= –15 V, ID = –4 A,
DS
= –10 V
V
GS
GEN
= 6 Ω
9 17 ns
2 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
θCA
2
V
= 0 V, IS = –2.1 A (Note 2) –0.8 –1.2 V
GS
is determined by the user's board design.
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted on a
minimum pad.
NDS9430 Rev B
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