Fairchild Semiconductor NDS9410A Datasheet

NDS9410A

Single N-Channel Enhancement Mode Field Effect Transistor

NDS9410A

April 2000

General Description

This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.

These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss and resistance to

Features

7.3 A, 30 V. R

•

High performance trench technology for extremely

•

low R

DS(ON)

High power and current handling capability in a

•

widely used surface mount package.

= 28 mΩ @ VGS = 10 V

DS(ON)

R

= 42 mΩ @ VGS = 4.5 V

DS(ON)

transients are needed.

D

D

D

D

G

S

SO-8

S

S

Absolute Maximum Ratings

TA=25oC unless otherwise noted

5
6
7
8

4
3
2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous

(Note 1a)

20

±

7.3 A

– Pulsed 20

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.2

1.0

Operating and Storage Junction Temperature Range -55 to +150

V

W

C

°

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

50
25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

NDS9410A NDS9410A 13’’ 12mm 2500 units

2000 Fairchild Semiconductor Corporation



C/W

°

C/W

°

NDS9410A Rev B(W)

NDS9410A

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain–Source Breakdown Voltage

DSS

Breakdown Voltage Temperature
Coefficient

J

V

= 0 V, ID = 250 µA

GS

I

= 250 µA, Referenced to 25°C

D

30 V

28

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 2
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

(Note 2)

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

V

= VGS, ID = 250 µA

DS

I

= 250 µA, Referenced to 25°C

D

VGS = 10 V, ID = 7.3 A

= 10 V, ID = 7.3 A, TJ=125°C

V

GS

= 4.5 V, ID = 6.3 A

V

GS

= 4.5 V, ID = 6.3 A, TJ=125°C

V

GS

11.63 V

-4.3

19
30
25
42

On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
Forward Transconductance VDS = 15 V, ID = 7.3 A 22 S

mV/°C

mV/°C

28
45
42
75

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Input Capacitance 830 pF
Output Capacitance 185 pF
Reverse Transfer Capacitance

(Note 2)

Turn–On Delay Time 6 12 ns
Turn–On Rise Time 10 20 ns

= 15 V, V

V

DS

f = 1.0 MHz

V

= 25 V, ID = 1 A,

DD

= 10 V, R

V

GS

GS

GEN

= 0 V,

= 6

80 pF

Ω

Turn–Off Delay Time 18 32 ns
Turn–Off Fall Time

V

= 15 V, ID = 2 A,

Total Gate Charge 14 22 nC
Gate–Source Charge 2.7 nC

V

DS

= 10 V

GS

Gate–Drain Charge

510ns

3.0 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

1.

JA

θ

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current 2.2 A
Drain–Source Diode Forward

Voltage

is guaranteed by design while R

JC

θ

V

= 0 V, IS = 2.2 A

GS

is determined by the user's board design.

CA

θ

(Note 2)

0.78 1.1 V

A

µ

m

Ω

a) 50°/W when

mounted on a 1in
pad of 2 oz copper

Scale 1 : 1 on letter size paper

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2.

2

b) 105°/W when

mounted on a .04 in
pad of 2 oz copper

2

c) 125°/W when mounted on a

minimum pad.

NDS9410A Rev B(W)

Typical Characteristics

NDS9410A

30

VGS = 10V

25

6.0V

5.0V

20

4.5V

15

10

5

0

00.511.522.5

4.0V

3.5V

3.0V

2.5V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

2.5

VGS = 3.0V

2

3.5V

1.5

1

0.5
0 5 10 15 20 25 30

4.0V

4.5V

, DRAIN CURRENT (A)

I

D

5.0V

6.0V
10V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8

ID = 7.3A

1.6
VGS = 10V

1.4

1.2

1

0.8

0.6

0.4

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

0.1

0.08

0.06

0.04

TA = 25oC

0.02

0

246810

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

ID = 7.3 A

Figure 3. On-Resistance Variation with

Temperature.

30

VDS = 5V

25

20

15

10

5

0

0.5 1.5 2.5 3.5 4.5

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

o

o

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

o

25

-55oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

NDS9410A Rev B(W)