Fairchild Semiconductor NDS8958 Datasheet

NDS8958

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description Features

July 1996

These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.

N-Channel 5.3A, 30V, R
P-Channel -4.0A, -30V, R

High density cell design or extremely low R

=0.035Ω @ V

DS(ON)

=0.065Ω @ V

DS(ON)

GS

GS

DS(ON)

=10V.

=-10V.

.

High power and current handling capability in a widely used
surface mount package.

Dual (N & P-Channel) MOSFET in surface mount package.

________________________________________________________________________________

5

6

7

8

4

3

2

1

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter N-Channel P-Channel Units

V

DSS

V

GSS

I

D

Drain-Source Voltage 30 -30 V

Gate-Source Voltage 20 -20 V

Drain Current - Continuous (Note 1a) 5.3 -4 A

- Pulsed 20 -15

P

D

Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9

TJ,T

Operating and Storage Temperature Range -55 to 150 °C

STG

THERMAL CHARACTERISTICS

R

θ

R

θ

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

JA

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

JC

NDS8958 Rev. C

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS

BV

I

DSS

I

GSSF

I

GSSR

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 30 V

VGS = 0 V, ID = -250 µA

Zero Gate Voltage Drain Current VDS = 24 V, V

VDS = -24 V, V

= 0 V N-Ch 1 µA

GS

TJ = 55°C

= 0 V P-Ch -1 µA

GS

TJ = 55°C

P-Ch -30 V

10 µA

-10 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V All 100 nA
Gate - Body Leakage, Reverse

VGS = -20 V, VDS= 0 V

All -100 nA

ON CHARACTERISTICS (Note 2)

V

R

GS(th)

DS(ON)

Gate Threshold Voltage

Static Drain-Source On-Resistance

VDS = VGS, ID = 250 µA

TJ = 125°C

VDS = VGS, ID = -250 µA

TJ = 125°C

VGS = 10 V, ID = 5.3 A

N-Ch 1 1.6 2.8 V

0.7 1.2 2.2

P-Ch -1 -1.6 -2.8

-0.7 -1.2 -2.2

N-Ch 0.033 0.035

TJ = 125°C 0.046 0.063

VGS = 4.5 V, ID = 4.4 A

0.046 0.05

VGS = -10 V, ID = -4.0 A P-Ch 0.052 0.065

TJ = 125°C

0.075 0.13

VGS = -4.5 V, ID = -3.3 A 0.085 0.1

I

D(on)

On-State Drain Current

VGS = 10 V, VDS = 5 V

N-Ch 20 A

VGS = -10 V, VDS = -5 V P-Ch -15

g

FS

Forward Transconductance

VDS = 10 V, ID = 5.3 A

N-Ch 10.5 S

VDS = -10 V, ID = -4.0 A P-Ch 7

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance N-Channel

VDS = 15 V, VGS = 0 V,
f = 1.0 MHz

C

oss

C

rss

Output Capacitance N-Ch 370 pF

P-Channel

Reverse Transfer Capacitance N-Ch 250 pF

VDS = -15 V, VGS = 0 V,
f = 1.0 MHz

N-Ch 720 pF
P-Ch 690

P-Ch 430

P-Ch 160

Ω

NDS8958 Rev. C

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)

t

t

t

t

D(on)

r

D(off)

f

Turn - On Delay Time N-Channel

VDD = 10 V, ID = 1 A,
V

= 10 V, R

Turn - On Rise Time N-Ch 13 30 ns

GEN

GEN

= 6 Ω

P-Channel

Turn - Off Delay Time N-Ch 29 50 ns

VDD = -10 V, ID = -1 A,
V

= -10 V, R

GEN

GEN

= 6 Ω

N-Ch 12 20 ns
P-Ch 9 20

P-Ch 20 25

P-Ch 40 50

Turn - Off Fall Time N-Ch 10 20 ns

P-Ch 19 40

Q

g

Q

gs

Q

gd

Total Gate Charge N-Channel

VDS = 10 V,
ID = 5.3 A, VGS = 10 V

N-Ch 19 30 nC
P-Ch 21 30

Gate-Source Charge N-Ch 2.2

P-Channel

Gate-Drain Charge N-Ch 5.5

VDS = -10 V,
ID = -4.0 A, VGS = -10 V

P-Ch 3.1

P-Ch 5.1

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current N-Ch 1.3 A

P-Ch -1.3

V

SD

t

rr

Notes:

1. R

P

design while R

D

Typical R

Drain-Source Diode Forward
Voltage

VGS = 0 V, IS = 1.3 A
VGS = 0 V, IS = -1.3 A

(Note 2) N-Ch 0.9 1.2 V

(Note 2)

P-Ch -0.85 -1.2

Reverse Recovery Time VGS = 0 V, IF = 1.3 A, dIF/dt = 100 A/µs N-Ch 100 ns

VGS = 0 V, IF = -1.3 A, dIF/dt = 100 A/µs

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

(t)

is determined by the user's board design.

CA

θ

T

=

R

θ

T

J−TA

θJA

JA

a. 78oC/W when mounted on a 0.5 in2 pad of 2oz copper.

b. 125oC/W when mounted on a 0.02 in2 pad of 2oz copper.

c. 135oC/W when mounted on a 0.003 in2 pad of 2oz copper.

1a

J−TA

=

(t)

R

θ

JC

for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

2

= I

(t) ×R

DS (ON ) T

D

+R

(t)

θ

CA

J

1b 1c

P-Ch 100

is guaranteed by

JC

θ

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDS8958 Rev. C

Typical Electrical Characteristics: N-Channel

25

V =10V

GS

20

15

6.0

5.0

4.5

4.0

2.5

3

2

V = 3.0V

GS

3.5

4.0

3.5

10

5

D

I , DRAIN-SOURCE CURRENT (A)

0

0 0.5 1 1.5 2 2.5 3

V , DRAIN-SOURCE VOLTAGE (V)

DS

3.0

1.5

DS(ON)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5
0 5 10 15 20 25

I , DRAIN CURRENT (A)

D

Figure 1. N-Channel On-Region Characteristic. Figure 2. N-Channel On-Resistance Variation with

Gate Voltage and Drain Current.

1.6

I = 5.3A

D

1.4

V =10V

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

2

V = 10V

GS

1.75

1.5

1.25

1

DS(ON)

R , NORMALIZED

0.75

DRAIN-SOURCE ON-RESISTANCE

0.5
0 5 10 15 20 25

I , DRAIN CURRENT (A)

D

T = 125°C

J

4.5

5.0

6.0
10

25°C

-55°C

Figure 3. N-Channel On-Resistance Variation with

Temperature.

25

V = 10V

DS

20

15

10

D

I , DRAIN CURRENT (A)

5

0

1 2 3 4 5 6

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J 25°C

125°C

Figure 5. N-Channel Transfer Characteristic.

Figure 4. N-Channel On-Resistance Variation with

Drain Current and Temperature.

1.2

V = V

1.1

1

0.9

th

V , NORMALIZED

0.8

0.7

GATE-SOURCE THRESHOLD VOLTAGE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

DS GS

I = 250µA

D

Figure 6. N-Channel Gate Threshold Variation

with Temperature.

NDS8958 Rev. C