Fairchild Semiconductor NDS8928 Datasheet

NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description Features

July 1996

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

N-Channel 5.5A, 20V, R R P-Channel -3.8A, -20V, R R

High density cell design for extremely low R

=0.035Ω @ V

DS(ON)

=0.045Ω @ V

DS(ON)

=0.07Ω @ V

DS(ON)

=0.1Ω @ V

DS(ON)

=4.5V

GS

=2.7V

GS

=-4.5V

GS

=-2.7V.

GS

.

DS(ON)

High power and current handling capability in a widely used surface mount package.

Dual (N & P-Channel) MOSFET in surface mount package.

________________________________________________________________________________

5

6

7

8

4

3

2

1

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter N-Channel P-Channel Units

V

DSS

V

GSS

I

D

Drain-Source Voltage 20 -20 V

Gate-Source Voltage 8 -8 V

Drain Current - Continuous (Note 1a) 5.5 -3.8 A

- Pulsed 20 -15

P

T

J,TSTG

D

Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation

(Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9

Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

R

θ

R

θ

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

JA

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

JC

NDS8928 Rev.D

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS

BV

I

DSS

I

GSSF

I

GSSR

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 20 V

VGS = 0 V, ID = -250 µA

Zero Gate Voltage Drain Current VDS = 16 V, V

VDS = -16 V, V

= 0 V N-Ch 1 µA

GS

TJ = 55oC

= 0 V P-Ch -1 µA

GS

TJ = 55oC

P-Ch -20 V

10 µA

-10 µA Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V All 100 nA Gate - Body Leakage, Reverse

VGS = -8 V, VDS= 0 V

All -100 nA

ON CHARACTERISTICS (Note 2)

V

R

GS(th)

DS(ON)

Gate Threshold Voltage

Static Drain-Source On-Resistance

VDS = VGS, ID = 250 µA

TJ = 125oC

VDS = VGS, ID = -250 µA

TJ = 125oC

VGS = 4.5 V, ID = 5.5 A

N-Ch 0.4 0.6 1 V

0.3 0.35 0.8

P-Ch -0.4 -0.7 -1

-0.3 -0.5 -0.8

N-Ch 0.029 0.035

Ω

TJ = 125oC 0.04 0.063

VGS = 2.7 V, ID = 5 A

0.035 0.045

VGS = -4.5 V, ID = -3.8 A P-Ch 0.06 0.07

TJ = 125oC

0.085 0.126

VGS = -2.7 V, ID = -3.2 A 0.082 0.1

I

D(on)

On-State Drain Current

VGS = 4.5 V, VDS = 5 V

N-Ch 20 A VGS = 2.7 V, VDS = 5 V 10 VGS = -4.5 V, VDS = -5 V

P-Ch -15 VGS = -2.7 V, VDS = -5 V -5

g

FS

Forward Transconductance

VDS = 10 V, ID = 5.5 A

N-Ch 14 S VDS = -10 V, ID = -3.8 A P-Ch 9

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance N-Channel

VDS = 10 V, VGS = 0 V, f = 1.0 MHz

C

oss

C

rss

Output Capacitance N-Ch 440 pF

P-Channel

Reverse Transfer Capacitance N-Ch 160 pF

VDS = -10 V, VGS = 0 V, f = 1.0 MHz

N-Ch 760 pF

P-Ch 1120

P-Ch 470

P-Ch 145

NDS8928 Rev.D

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

r

D(off)

f

Turn - On Delay Time N-Channel

VDD = 5 V, ID = 1 A, V

= 4.5 V, R

Turn - On Rise Time N-Ch 30 50 ns

GEN

= 6 Ω

P-Channel

Turn - Off Delay Time N-Ch 54 80 ns

VDD = -5 V, ID = -1 A, V

= -4.5 V, R

GEN

= 6 Ω

N-Ch 11 20 ns

P-Ch 13 20

P-Ch 53 70

P-Ch 60 80

Turn - Off Fall Time N-Ch 20 40 ns

P-Ch 33 40

Q

g

Q

gs

Q

gd

Total Gate Charge N-Channel

VDS = 10 V, ID = 5.5 A, VGS = 4.5 V

N-Ch 21 30 nC

P-Ch 19 30

Gate-Source Charge N-Ch 2.3 nC

P-Channel

Gate-Drain Charge N-Ch 6.8 nC

VDS = -10 V, ID = -3.8 A, VGS = -4.5 V

P-Ch 2.4

P-Ch 5.5

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current N-Ch 1.3 A

P-Ch -1.3

V

SD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A

(Note 2)

N-Ch 0.8 1.2 V

P-Ch -0.75 -1.2

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

design while R

(t)

P

D

Typical R

is determined by the user's board design.

CA

θ

T

=

R

θ

a. 78oC/W when mounted on a 0.5 in2 pad of 2oz copper.

b. 125oC/W when mounted on a 0.02 in2 pad of 2oz copper.

c. 135oC/W when mounted on a 0.003 in2 pad of 2oz copper.

T

J−TA

=

(t)

R

θJ A

θJ C+RθCA

for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

JA

J−TA

2

= I

(t) × R

DS(ON)T

D

(t)

J

is guaranteed by

JC

θ

1a

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

1b

1c

NDS8928 Rev.D

Typical Electrical Characteristics: N-Channel

30

V =4.5V

GS

25

20

15

10

5

D

I , DRAIN-SOURCE CURRENT (A)

0

0 0.5 1 1.5 2 2.5 3

3.0

3.5

2.7

2.5

2.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

1.5

Figure 1. N-Channel On-Region Characteristics.

1.6

I = 5.5A

1.4

1.2

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

D

V = 4.5V

GS

1

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

2

1.8

1.6

1.4

1.2

DS(on)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.8

V = 2.0V

GS

2.5

2.7

3.0

3.5

1

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

4.5

Figure 2. N-Channel On-Resistance Variation with Gate

Voltage and Drain Current.

2

V = 4.5 V

GS

T = 125°C

1.5

1

DS(on)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5 0 5 10 15 20 25 30

J

25°C

-55°C

I , DRAIN CURRENT (A)

D

Figure 3. N-Channel On-Resistance Variation with

Temperature.

30

V = 5.0V

DS

25

20

15

10

D

I , DRAIN CURRENT (A)

5

0

0 0.5 1 1.5 2 2.5 3 3.5 4

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25°C

125°C

Figure 5. N-Channel Transfer Characteristics.

Figure 4. N-Channel On-Resistance Variation with

Drain Current and Temperature.

1.4

V = V

1.2

1

0.8

th

V , NORMALIZED

0.6

GATE-SOURCE THRESHOLD VOLTAGE

0.4

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

DS GS

I = 250µA

D

Figure 6. N-Channel Gate Threshold Variation

with Temperature.

NDS8928 Rev.D

Fairchild Semiconductor NDS8928 Datasheet

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