Fairchild Semiconductor NDS0610 Datasheet
April 1995
NDF0610 / NDS0610
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been designed to minimize on-state resistance,
provide rugged and reliable performance and fast switching.
They can be used, with a minimum of effort, in most
applications requiring up to 180mA DC and can deliver
pulsed currents up to 1A. This product is particularly suited
to low voltage applications requiring a low current high side
switch.
____________________________________________________________________________________________
D
-0.18 and -0.12A, -60V. R
DS(ON)
= 10Ω
Voltage controlled p-channel small signal switch
High density cell design for low R
DS(ON)
TO-92 and SOT-23 packages for both through hole and
surface mount applications
High saturation current
S
G
S
D
G
S
TO-92
NDF0610
Absolute Maximum Ratings T
= 25°C unless otherwise noted
A
Symbol Parameter NDF0610 NDS0610 Units
V
DSS
V
DGR
V
GSS
Drain-Source Voltage -60 V
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous ±20 V
- Nonrepetitive (tP < 50 µs) ±30 V
I
D
Drain Current - Continuous -0.18 -0.12 A
- Pulsed -1
P
D
Maximum Power Dissipation TA = 25°C 0.8 0.36 W
Derate above 25°C 5 2.9 mW/oC
TJ,T
T
L
Operating and Storage Temperature Range -55 to 150 °C
STG
Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds
THERMAL CHARACTERISTICS
R
θ
Thermal Resistance, Junction-to-Ambient 200 350 °C/W
JA
SOT-23
NDS0610
G
D
-60 V
300 °C
© 1998 Fairchild Semiconductor Corporation
NDS0610.SAM
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -10 µA -60 V
Zero Gate Voltage Drain Current VDS = -48 V, V
= 0 V -1 µA
GS
T
= 125°C -200 µA
J
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 10 nA
Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -10 nA
ON CHARACTERISTICS (Note 1)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage V
= V
, I
DS
= -1 mA -1 -2.4 -3.5 V
GS
D
T
= 125°C -0.6 -2.1 -3.2
J
Static Drain-Source On-Resistance VGS = -10 V, ID = -0.5 A 3.6 10
T
= 125°C 5.9 16
J
VGS = -4.5 V, ID = -0.25 A 5.2 20
T
= 125°C 7.9 30
J
I
D(on)
On-State Drain Current VGS = -10 V, VDS = -10 V -0.6 -1.6 A
VGS = -4.5 V, VDS = -10 V -0.35
g
FS
Forward Transconductance VDS = -10 V, ID = -0.1 A 70 170 mS
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = -25 V, VGS = 0 V,
Output Capacitance 11 25 pF
f = 1.0 MHz
Reverse Transfer Capacitance 3.2 5 pF
40 60 pF
SWITCHING CHARACTERISTICS (Note 1)
t
D(on)
t
r
t
D(off)
t
f
Q
Q
Q
g
gs
gd
Turn - On Delay Time VDD = -25 V, ID = -0.18 A,
Turn - On Rise Time 5 15 nS
VGS = -10 V, R
GEN
= 25 Ω
7 10 nS
Turn - Off Delay Time 13 15 nS
Turn - Off Fall Time 10 20 nS
Total Gate Charge VDS = -48 V,
Gate-Source Charge 0.6 nC
ID = -0.5 A, VGS = -10 V
1.43 nC
Gate-Drain Charge 0.25 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
I
rr
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Maximum Continuous Source Current -0.18 A
Maximum Pulse Source Current (Note 1) -1 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time VGS = 0 V, IS = -0.5 A,
Reverse Recovery Current 2.8 A
VGS = 0 V, IS = -0.5 A
(Note 1)
dIF/dt = 100 A/µs
-1.2 -1.5 V
TJ = 125°C -0.98 -1.3
40 ns
Ω
NDS0610.SAM
Typical Electrical Characteristics
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
D
I , DRAIN-SOURCE CURRENT (A)
0
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = -10V
GS
-9
-8
Figure 1. On-Region Characteristics
1.8
I = -0.5A
D
1.6
V = -10V
GS
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
-7
-6
-5
-4
2.2
V = -4V
GS
2
1.8
1.6
1.4
DS(on)
1.2
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
-10-8-6-4-20
0.8
-5
-6
I , DRAIN CURRENT (A)
D
-7
-8
-9
-10
-1.4-1.2-1-0.8-0.6-0.4-0.20
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
3
2.5
2
1.5
DS(on)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
T = 125°C
J
25
-55
I , DRAIN CURRENT (A)
D
V
GS
-4.5V
-10V
125
25
-55
-1.4-1.2-1-0.8-0.6-0.4-0.20
Figure 3. On-Resistance Variation
with Temperature
-1.2
V = -10V
-1
-0.8
-0.6
-0.4
D
I , DRAIN CURRENT (A)
-0.2
0
DS
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
Figure 5. Transfer Characteristics
25
125
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.1
1.05
1
0.95
0.9
th
V , NORMALIZED
0.85
GATE-SOURCE THRESHOLD VOLTAGE
0.8
-10-8-6-4-20
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
V = V
DS GS
I = -1mA
D
Figure 6. Gate Threshold Variation with
Temperature
NDS0610.SAM
Typical Electrical Characteristics (continued)
1.15
I = -10µA
D
1.1
1.05
1
DSS
BV , NORMALIZED
0.95
0.9
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation with
Temperature
70
50
30
20
10
CAPACITANCE (pF)
5
3
2
0.1 0.2 0.5 1 2 5 10 20 30 60
f = 1 MHz
V = 0V
GS
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
C
rss
C
C
iss
oss
1.5
V = 0V
GS
1
T = 125°C
0.5
0.3
J
25
-55
0.2
S
-I , REVERSE DRAIN CURRENT (A)
0.1
0.6 0.8 1 1.2 1.4 1.6 1.8
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
-10
-8
-6
-4
-2
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V = -12V
DS
Q , GATE CHARGE (nC)
g
-24
-48
I = -0.5A
D
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
g , TRANSCONDUCTANCE (SIEMENS)
0.4
0.3
0.2
0.1
FS
0
I , DRAIN CURRENT (A)
D
T = -55°C
J
25
125
V = -10V
DS
-1.4-1.2-1-0.8-0.6-0.4-0.20
Figure 11. Transconductance Variation with Drain
Current and Temperature
NDS0610.SAM
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