Fairchild Semiconductor NDS0605 Datasheet
April 1995
NDS0605
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been designed to minimize on-state resistance, provide rugged
and reliable performance and fast switching. They can be
used, with a minimum of effort, in most applications requiring
up to 0.18A DC and can deliver pulsed currents up to 1A. This
product is particularly suited to low voltage applications
requiring a low current high side switch.
___________________________________________________________________________________________
-0.18A, -60V. R
DS(ON)
= 5Ω @ V
= -10V.
GS
Voltage controlled p-channel small signal switch.
High density cell design for low R
DS(ON)
.
High saturation current.
D
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
A
G
Symbol Parameter NDS0605 Units
V
V
V
I
D
Drain-Source Voltage -60 V
DSS
Drain-Gate Voltage (RGS < 1 MΩ)
DGR
Gate-Source Voltage - Continuous ±20 V
GSS
-60 V
Drain Current - Continuous -0.18 A
- Pulsed -1
P
Maximum Power Dissipation TA = 25°C
D
0.36 W
Derate above 25°C 2.9 mW/oC
TJ,T
T
Operating and Storage Temperature Range -55 to 150 °C
STG
Maximum lead temperature for soldering purposes,
L
1/16" from case for 10 seconds
300 °C
THERMAL CHARACTERISTICS
R
Thermal Resistance, Junction-to-Ambient 350 °C/W
JA
θ
© 1997 Fairchild Semiconductor Corporation
NDS0605.SAM
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -10 µA -60 V
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VDS = -48 V, V
GS
= 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
TJ = 125°C
-1 µA
-500 µA
100 nA
-100 nA
ON CHARACTERISTICS (Note 1)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = -250 µA
TJ = 125°C
VGS = -10 V, ID = -0.5 A
TJ = 125°C
VGS = -4.5 V, ID = -0.25 A
-1 -3 V
-0.6 -2.8
5
10
7.5
Ω
TJ = 125°C 15
I
D(on)
On-State Drain Current
VGS = -10 V, VDS = -10 V
-0.6 A
VGS = -4.5 V, VDS = -10 V -0.25
g
FS
Forward Transconductance
VDS = -10 V, ID = -0.2 A
0.07 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = -25 V, VGS = 0 V,
Output Capacitance 25 pF
f = 1.0 MHz
Reverse Transfer Capacitance 5 pF
60 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
D(on)
r
D(off)
f
Turn - On Delay Time VDD = -30 V, ID = -0.2 A,
Turn - On Rise Time 15 nS
VGS = -10 V, R
GEN
= 25 Ω
10 nS
Turn - Off Delay Time 15 nS
Turn - Off Fall Time 20 nS
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
Continuous Source Diode Current -0.18 A
Maximum Pulsed Source Diode Current (Note 1) -1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.5 A
(Note 1)
TJ = 125°C
-1.5 V
-1.3
Note :
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDS0605.SAM
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