Fairchild Semiconductor NDP7061, NDB7061 Datasheet
NDP7061 / NDB7061
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
May 1996
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
64A, 60V. R
= 0.016Ω @ VGS=10V.
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter NDP7061 NDB7061 Units
V
DSS
V
DGR
V
GSS
Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1 MΩ)
60 V
Gate-Source Voltage - Continuous ± 20 V
- Nonrepetitive (tP < 50 µs) ± 40
I
D
Drain Current - Continuous 64 A
- Pulsed 190
P
D
Maximum Power Dissipation @ TC = 25°C
130 W
Derate above 25°C 0.87 W/°C
TJ,T
T
L
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
275 °C
1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP7061 Rev. C / NDB7061 Rev. D
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
W
I
AR
Single Pulse Drain-Source Avalanche
DSS
Energy
VDD = 30 V, ID = 64 A 500 mJ
Maximum Drain-Source Avalanche Current 64 A
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current VDS = 48 V, V
VGS = 0 V, ID = 250 µA
= 0 V 10 µA
GS
TJ = 125°C
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
60 V
1 mA
-100 nA
ON CHARACTERISTICS (Note 1)
V
GS(th)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.9 4 V
TJ = 125°C 1.4 2.2 3.6
R
I
g
DS(ON)
D(on)
FS
Static Drain-Source On-Resistance
VGS = 10 V, ID = 35 A
TJ = 125°C
On-State Drain Current VGS = 10 V, VDS = 10 V 60 A
Forward Transconductance
VDS = 10 V, ID = 35 A
0.013 0.016
0.021 0.032
30 S
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance 870 pF
f = 1.0 MHz
Reverse Transfer Capacitance 310 pF
1930 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
Turn - On Delay Time
Turn - On Rise Time 98 200 nS
VDD = 25 V, ID = 64 A,
VGS = 10 V, R
GEN
= 5 Ω
Turn - Off Delay Time 36 80 nS
Turn - Off Fall Time 65 150 nS
g
gs
gd
Total Gate Charge VDS = 48 V,
Gate-Source Charge 11 nC
ID = 64 A, VGS = 10 V
Gate-Drain Charge 37.5 nC
13 30 nS
67 100 nC
NDP7061 Rev. C / NDB7061 Rev. D
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
ISM
V
t
I
S
SD
rr
rr
Maximum Continuos Drain-Source Diode Forward Current 64 A
Maximum Pulsed Drain-Source Diode Forward Current 190 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 35 A (Note 1) 0.9 1.3 V
0.8 1.2
40 105 150 ns
Reverse Recovery Time
TJ = 125°C
VGS = 0 V, IF = 64 A, dIF/dt = 100 A/µs
Reverse Recovery Current 2 4.5 10 A
THERMAL CHARACTERISTICS
R
θ
R
θ
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Thermal Resistance, Junction-to-Case 1.15 °C/W
JC
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
JA
NDP7061 Rev. C / NDB7061 Rev. D
V , NORMALIZED
R , NORMALIZED
Typical Electrical Characteristics
100
V =20V
GS
12
10
8.0
80
60
7.0
6.0
40
20
D
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4
V , DRAIN-SOURCE VOLTAGE (V)
DS
5.0
Figure 1. On-Region Characteristics
2
I = 35A
D
V = 10V
1.75
1.25
DS(ON)
R , NORMALIZED
0.75
DRAIN-SOURCE ON-RESISTANCE
GS
1.5
1
0.5
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On-Resistance Variation
with Temperature
4.5
3
V = 5.0V
GS
2.5
6.0
2
1.5
DS(on)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 20 40 60 80 100
I , DRAIN CURRENT (A)
D
7.0
8.0
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2
V =10V
GS
1.75
1.5
1.25
T = 125°C
J
25°C
1
DS(on)
0.75
DRAIN-SOURCE ON-RESISTANCE
0.5
0 20 40 60 80 100
I , DRAIN CURRENT (A)
D
-55°C
Figure 4. On-Resistance Variation with Drain
Current and Temperature
10
12
20
60
V = 10V
DS
50
40
30
20
D
I , DRAIN CURRENT (A)
10
0
2 3 4 5 6 7
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
125°C
25°C
1.4
1.2
1
0.8
GS(th)
0.6
GATE-SOURCE THRESHOLD VOLTAGE
0.4
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
V = V
GS
DS
I = 250µA
D
NDP7061 Rev. C / NDB7061 Rev. D
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