Fairchild Semiconductor NDP7050 Datasheet

NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor

General Description Features

March 1996

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

75A, 50V. R

= 0.013Ω @ VGS=10V.

DS(ON)

Critical DC electrical parameters specified at elevated temperature.

Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

175°C maximum junction temperature rating. High density cell design for extremely low R

DS(ON)

TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

.

_______________________________________________________________________________

D

G

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter NDP7050 NDB7050 Units

V

DSS

V

DGR

V

GSS

Drain-Source Voltage 50 V Drain-Gate Voltage (RGS < 1 MΩ)

50 V

Gate-Source Voltage - Continuous ± 20 V

- Nonrepetitive (tP < 50 µs) ± 40

I

D

Drain Current - Continuous 75 A

- Pulsed 225

P

D

Maximum Power Dissipation @ TC = 25°C 150 W

Derate above 25°C 1 W/°C TJ,T T

L

Operating and Storage Temperature Range -65 to 175 °C

STG

Maximum lead temperature for soldering

275 °C

purposes, 1/8" from case for 5 seconds

NDP7050.SAM Rev. D

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W

I

AR

Single Pulse Drain-Source Avalanche

DSS

Energy

VDD = 25 V, ID = 75 A 550 mJ

Maximum Drain-Source Avalanche Current 75 A

OFF CHARACTERISTICS

BV I

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 50 V

DSS

Zero Gate Voltage Drain Current VDS = 50 V, V

= 0 V 250 µA

GS

TJ = 125°C 1 mA

I

GSSF

I

GSSR

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA

ON CHARACTERISTICS (Note 1)

V

GS(th)

Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.8 4 V

TJ = 125°C 1.4 2.1 3.6

R

DS(ON)

Static Drain-Source On-Resistance VGS = 10 V, ID = 40 A 0.01 0.013

Ω

TJ = 125°C 0.015 0.023 I g

D(on)

FS

On-State Drain Current VGS = 10 V, VDS = 10 V 75 A Forward Transconductance VDS = 10 V, ID = 37.5 A 15 39 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 25 V, VGS = 0 V, Output Capacitance 1130 1600 pF

f = 1.0 MHz

Reverse Transfer Capacitance 380 800 pF

2960 3600 pF

SWITCHING CHARACTERISTICS (Note 1)

t t

Q Q Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDD = 30 V, ID = 75 A, Turn - On Rise Time 128 400 nS

VGS = 10 V, R

GEN

= 5 Ω

17 30 nS

Turn - Off Delay Time 54 80 nS Turn - Off Fall Time 90 200 nS

Total Gate Charge VDS = 48 V, Gate-Source Charge 14.5 nC

ID = 75 A, VGS = 10 V

100 115 nC

Gate-Drain Charge 51 nC

NDP7050.SAM Rev. D

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS

I

S

Maximum Continuos Drain-Source Diode Forward Current 75 A ISM Maximum Pulsed Drain-Source Diode Forward Current 225 A V

SD

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 37.5 A (Note 1) 0.9 1.3 V

TJ = 125°C 0.84 1.2

t

rr

I

rr

Reverse Recovery Time VGS = 0 V, IF = 75 A, dIF/dt = 100 A/µs 80 150 ns

Reverse Recovery Current 2 4.8 10 A

THERMAL CHARACTERISTICS

R

θ

R

θ

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Thermal Resistance, Junction-to-Case 1 °C/W

JC

Thermal Resistance, Junction-to-Ambient 62.5 °C/W

JA

NDP7050.SAM Rev. D

Typical Electrical Characteristics

120

V =20V

GS

100

80

60

10

8.0

7.0

6.5

6.0

5.5

40

20

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

2

I = 40A

D

1.8

V = 10V

GS

1.6

1.4

1.2

1

DS(ON)

0.8

R , NORMALIZED

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

5.0

4.5

4.0

2.5

V = 5.0V

GS

2

1.5

DS(on)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5 0 20 40 60 80 100 120

5.5

6.0

I , DRAIN CURRENT (A)

D

6.5

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

1.8

V = 10V

GS

1.6

1.4

1.2

1

DS(on)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6 0 20 40 60 80 100 120

T = 125°C

J

25°C

I , DRAIN CURRENT (A)

D

-55°C

7.0

8.0 10

12

20

Figure 3. On-Resistance Variation

with Temperature.

60

V = 10V

DS

50

T = -55°C

25°C

J

125°C

40

30

20

D

I , DRAIN CURRENT (A)

10

0

2 3 4 5 6 7

V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

1.2

V = V

1.1

1

0.9

0.8

0.7

GS(th)

V , NORMALIZED

0.6

GATE-SOURCE THRESHOLD VOLTAGE

0.5

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

DS

I = 250µA

D

Figure 6. Gate Threshold Variation with

Temperature.

GS

NDP7050.SAM Rev. D