Fairchild Semiconductor NDP6060L Datasheet

NDP6060L / NDB6060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

April 1996

These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients are
needed.

48A, 60V. R
Low drive requirements allowing operation directly from logic

drivers. V
Critical DC electrical parameters specified at elevated

temperature.
Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
TO-220 and TO-263 (D2PAK) package for both through hole

= 0.025Ω @ VGS = 5V.

DS(ON)

< 2.0V.

GS(TH)

DS(ON)

.

and surface mount applications.

________________________________________________________________________________

D

G

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter NDP6060L NDB6060L Units

V

DSS

V

DGR

V

GSS

I

D

Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1 MΩ)

60 V

Gate-Source Voltage - Continuous ± 16 V

- Nonrepetitive (tP < 50 µs)

± 25

Drain Current - Continuous 48 A

- Pulsed 144

P

D

Total Power Dissipation @ TC = 25°C 100 W

Derate above 25°C 0.67 W/°C
TJ,T
T

L

© 1997 Fairchild Semiconductor Corporation

Operating and Storage Temperature -65 to 175 °C

STG

Maximum lead temperature for soldering

275 °C

purposes, 1/8" from case for 5 seconds

NDP6060L Rev. D / NDB6060L Rev. E

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W

DSS

I

AR

Single Pulse Drain-Source Avalanche

VDD = 25 V, ID = 48 A 200 mJ

Energy
Maximum Drain-Source Avalanche Current 48 A

OFF CHARACTERISTICS

BV
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA
VDS = 60 V, V

GS

= 0 V

TJ = 125°C

Gate - Body Leakage, Forward

VGS = 16 V, VDS = 0 V

Gate - Body Leakage, Reverse VGS = -16 V, VDS = 0 V -100 nA

60 V

250 µA

1 mA

100 nA

ON CHARACTERISTICS (Note 1)

V

R

I
g

D(on)

FS

GS(th)

DS(ON)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

TJ = 125°C

Static Drain-Source On-Resistance VGS = 5 V, ID = 24 A 0.025

TJ = 125°C

VGS = 10 V, ID = 24 A
On-State Drain Current VGS = 5 V, VDS = 10 V 48 A
Forward Transconductance

VDS = 10 V, ID = 24 A

1 2 V

0.65 1.5

Ω

0.04

0.02

10 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 460 800 pF
Reverse Transfer Capacitance 150 400 pF

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

1630 2000 pF

SWITCHING CHARACTERISTICS (Note 1)

t
t

t
t

Q
Q
Q

D(on)

r

D(off)

f

Turn - On Delay Time
Turn - On Rise Time 320 500 nS

Turn - Off Delay Time 49 100 nS

VDD = 30 V, ID = 48 A,

VGS = 5 V, R

R

= 15 Ω

GS

GEN

= 15 Ω,

Turn - Off Fall Time 161 300 nS

g

gs

gd

Total Gate Charge
Gate-Source Charge 8.2 nC
Gate-Drain Charge 21 nC

VDS = 48 V,

ID = 48 A, VGS = 5 V

15 30 nS

36 60 nC

NDP6060L Rev. D / NDB6060L Rev. E

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS

I
ISM
V

t
I

S

SD

rr

rr

Maximum Continuos Drain-Source Diode Forward Current 48 A
Maximum Pulsed Drain-Source Diode Forward Current 144 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 24 A (Note 1) 1.3 V

TJ = 125°C

Reverse Recovery Time
Reverse Recovery Current 2 3.6 8 A

VGS = 0 V, IF = 48 A,
dIF/dt = 100 A/µs

35 75 140 ns

1.2

THERMAL CHARACTERISTICS

R

JC

θ

R

JA

θ

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Thermal Resistance, Junction-to-Case 1.5 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W

NDP6060L Rev. D / NDB6060L Rev. E

Typical Electrical Characteristics

100

80

V = 10V

GS

6.0

5.0

4.5

60

40

20

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

4.0

Figure 1. On-Region Characteristics.

2

I = 24A

D

1.75

V = 5V

GS

1.5

1.25

1

DS(ON)

R , NORMALIZED

0.75

DRAIN-SOURCE ON-RESISTANCE

0.5

-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)

J

3.5

3.0

2.5

2

V = 3.0V

GS

1.5

3.5

4.0

4.5

5.0

1

DS(on)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5
0 20 40 60 80 100

I , DRAIN CURRENT (A)

D

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

2

V = 5.0V

GS

1.8

1.6

1.4

1.2

1

DS(on)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6
0 20 40 60 80 100

T = 125°C

J

25°C

I , DRAIN CURRENT (A)

D

-55°C

5.5

6.0

10

Figure 3. On-Resistance Variation

with Temperature.

60

V = 10V

DS

50

40

30

20

D

I , DRAIN CURRENT (A)

10

0

1 2 3 4 5

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25°C

125°C

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

1.3

1.2

1.1

1

0.9

0.8

GS(th)

0.7

V , NORMALIZED

0.6

GATE-SOURCE THRESHOLD VOLTAGE

0.5

-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)

J

Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with

Temperature.

NDP6060L Rev. D / NDB6060L Rev. E

V = V

DS

GS

I = 250µA

D