Fairchild Semiconductor NDP6060 Datasheet
NDP6060 / NDB6060
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
March 1996
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
48A, 60V. R
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
TO-220 and TO-263 (D2PAK) package for both through hole
= 0.025Ω @ VGS=10V.
DS(ON)
DS(ON)
.
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter NDP6060 NDB6060 Units
V
DSS
V
DGR
V
GSS
Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1 MΩ)
60 V
Gate-Source Voltage - Continuous ± 20 V
- Nonrepetitive (tP < 50 µs) ± 40
I
D
Drain Current - Continuous Tc=25oC
- Continuous TC=100oC
48 A
32
- Pulsed 144
P
D
Total Power Dissipation @ TC = 25°C 100 W
Derate above 25°C 0.67 W/°C
TJ,T
T
L
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
275 °C
1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP6060 Rev. B1 / NDB6060 Rev. C
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche
VDD = 25 V, ID = 48 A 200 mJ
Energy
Maximum Drain-Source Avalanche Current 48 A
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 60 V, V
GS
= 0 V
TJ = 125°C
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
60 V
250 µA
1 mA
100 nA
ON CHARACTERISTICS (Note 1)
V
R
I
g
GS(th)
DS(ON)
D(on)
FS
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
Static Drain-Source On-Resistance VGS = 10 V, ID = 24 A 0.02 0.025
TJ = 125°C
On-State Drain Current
VGS = 10 V, VDS = 10 V
Forward Transconductance VDS = 10 V, ID = 24 A 10 19 S
2 2.9 4 V
1.4 2.3 3.6
0.032 0.04
48 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 475 800 pF
Reverse Transfer Capacitance 150 400 pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
1190 1800 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 30 V, ID = 48 A,
Turn - On Rise Time 145 300 nS
VGS = 10 V, R
GEN
= 7.5 Ω
10 20 nS
Turn - Off Delay Time 28 60 nS
Turn - Off Fall Time 77 150 nS
Total Gate Charge
Gate-Source Charge 7.6 nC
VDS = 48 V,
ID = 48 A, VGS = 10V
39 70 nC
Gate-Drain Charge 22 nC
Ω
NDP6060 Rev. B1 / NDB6060 Rev. C
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
ISM
V
t
I
S
SD
rr
rr
Maximum Continuos Drain-Source Diode Forward Current 48 A
Maximum Pulsed Drain-Source Diode Forward Current 144 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 24 A (Note 1) 0.9 1.3 V
TJ = 125°C
Reverse Recovery Time
Reverse Recovery Current 2 3.6 8 A
VGS = 0 V, IF = 48 A,
dIF/dt = 100 A/µs
0.8 1.2
35 87 140 ns
THERMAL CHARACTERISTICS
R
JC
θ
R
JA
θ
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Thermal Resistance, Junction-to-Case 1.5 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
NDP6060 Rev. B1 / NDB6060 Rev. C
Typical Electrical Characteristics
100
V = 20V
GS
80
60
40
20
D
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5 6
12
10
9.0
8.0
7.0
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics
2
I = 24A
1.75
1.25
DS(ON)
R , NORMALIZED
0.75
DRAIN-SOURCE ON-RESISTANCE
D
V = 10V
GS
1.5
1
0.5
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
6.0
5.0
2
1.8
1.6
1.4
1.2
DS(on)
1
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
V = 6.0V
GS
7.0
8.0
9.0
0 20 40 60 80 100
I , DRAIN CURRENT (A)
D
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2.5
V = 10V
GS
2
1.5
DS(on)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 20 40 60 80 100
I , DRAIN CURRENT (A)
D
T = 125°C
J
25°C
-55°C
10
12
20
Figure 3. On-Resistance Variation
with Temperature
60
V = 10V
DS
50
40
30
20
D
I , DRAIN CURRENT (A)
10
0
2 4 6 8 10
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25°C
125°C
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.2
1.1
1
0.9
0.8
GS(th)
0.7
V , NORMALIZED
0.6
GATE-SOURCE THRESHOLD VOLTAGE
0.5
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
NDP6060 Rev. B1 / NDB6060 Rev. C
V = V
GS
DS
I = 250µA
D
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