Fairchild Semiconductor IRFP460C Datasheet

IRFP460C

500V N-Channel MOSFET

IRFP460C

February 2002

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 20A, 500V, R

• Low gate charge ( typical 130nC)

• Low Crss ( typical 60 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 0.24Ω @VGS = 10 V

DS(on)

suited for high efficiency switch mode power supplies and
power factor corrections.

D

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G

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TO-3P

!!!!

GSD

Absolute Maximum Ratings T

IRFP Series

= 25°C unless otherwise noted

C

Symbol Parameter IRFP460C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 500 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

(Note 2)
(Note 1)
(Note 1)
(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C 1.88 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

!!!!

S

20 A

12.5 A
80 A

1050 mJ

20 A

23.5 mJ

4.5 V/ns

235 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2002 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 0.53 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. A, February 2002

IRFP460C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

V

= 500 V, VGS = 0 V

DS

V

= 400 V, TC = 125°C

DS

= 30 V, VDS = 0 V

V

GS

V

= -30 V, VDS = 0 V

GS

500 -- -- V

-- 0.55 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

= VGS, ID = 250 µA

V

DS

V

= 10 V, ID = 10.0 A

GS

= 50 V, ID = 10.0 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.2 0.24 Ω

-- 18 -- S

Dynamic Character istics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 380 460 pF
Reverse Transfer Capacitance -- 60 80 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 4590 6000 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 5.1mH, IAS = 20A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Turn-On Delay Time

= 250 V, ID = 20 A,

Turn-On Rise Time -- 150 310 ns
Turn-Off Delay Time -- 380 770 n s

V

DD

R

G

= 25 Ω

Turn-Off Fall Time -- 180 37 0 n s
Total Gate Charge
Gate-Source Charge -- 20 -- nC
Gate-Drain Charge -- 45 -- nC

= 400 V, ID = 20 A,

V

DS

V

GS

= 10 V

Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 80 A

= 0 V, IS = 20 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 7.7 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 20 A,

V

GS

/ dt = 100 A/µs

dI

F

-- 50 120 ns

(Note 4, 5)

-- 130 170 nC

(Note 4, 5)

-- -- 1.4 V

-- 480 -- ns

(Note 4)

©2002 Fairchild Semiconductor Corporation

Rev. A, February 2002

Typical Characteristics

IRFP460C

V

GS

Top : 1 5 .0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

, Drain Current [A]

D

I

-1

10

-1

10

0

10

%

Note s :

1. 250&s Pulse Test

$

= 25

2. T

C

1

10

VDS, Drain-Source Voltage [V]

1.0

0.8

],

0.6

'

[

DS(ON)

R

0.4

0.2

Drain-Source On-Resistance

0.0
0 102030405060708090

VGS = 10V

%

VGS = 20V

Note : T

ID, Drain C u rre n t [A]

-55oC

%

Notes :

= 50V

1. V

DS

&

2. 25 0

s Pulse Test

2

10

1

10

150oC

25oC

0

10

, Dra in Curre n t [A ]

D

I

-1

10

246810

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

, Reverse Drain Current [A]

DR

$

= 25

J

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

$

25

$

150

%

Note s :

= 0V

1. V

GS

2. 25 0&s Pulse Te st

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Capacitance [pF]

10000

8000

6000

4000

2000

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

%

C

rss

-1

10

0

10

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

1

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0306090120150

QG, Tota l G a te C h a rg e [n C ]

VDS = 100V

VDS = 250V

VDS = 400V

%

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

Dimensions in Millimeters

Note : I

= 20.0 A

D

Rev. A, February 2002©2002 Fairchild Semiconductor Corporation