Fairchild Semiconductor IRFP350A Datasheet

$GYDQFHG 3RZHU 026)(7

IRFP350A

FEATURES

Avalanche Rugged Technology

♦

Rugged Gate Oxide Technology

♦

Lower Input Capacitance

♦

Improved Gate Charge

♦

Extended Safe Operating Area

♦

Lower Leakage Current: 10µA (Max.) @ V

♦

Low R

♦

: 0.254Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T Drain Current-Pulsed Gate-to-Source Volta ge Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Juncti on and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8

from case for 5-seconds

T

V

DSS

I

D

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

GS AS

AR

D

STG

L

= 400V

DS

=25°C)

C

=100°C)

C

(1)

(2) (1) (1) (3)

BV R

DSS

DS(on)

= 400 V

ID = 17 A

TO-3P

1

2

3

1.Gate 2. Drain 3. Source

400

17

10.8 68

30

±

1156

17

20.2

4.0

202

1.61

- 55 to +150

300

= 0.3Ω

V A A

V

mJ

A

mJ

V/ns

W

W/°C

°C

Thermal Resistance

R

θJC

R

CS

θ

R

θJA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.24

--

0.62

--

40

°C/W

Rev. B

IRFP350A

1&+$1 1(/

32:(5 026)(7

Electrical Characteristics

CharacteristicSymbol

BV ∆BV/∆T V

I

R

C C t

t

DSS

GS(th)

GSS

DSS

DS(on)

g

fs

C

iss oss rss

d(on)

t

r

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forwar d Gate-Source Leakage , Revers e

Drain-to-Sou rce Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (

Miller ) Charge

(TC=25°C unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

400

--

2.0

--

0.46

--

11.65 2140

305 134

20 22

100

32

101

14

51.5

--

4.0

100

-100 10

100

0.3

--

2780

350 155

50 55

210

75

131

--

V

V/°C

V

nA

A

µ

Ω

pF

ns

nC

=0V,ID=250µA

GS

I

=250µA

D

VDS=5V,ID=250µA

=30V

V

GS

=-30V

V

GS

V

=400V

DS

V

=320V,TC=125°C

DS

=10V,ID=8.5A

V

GS

Ω

VDS=50V,ID=8.5A V

=0V,VDS=25V,f =1MHz

GS

See Fig 5

VDD=200V,ID=17A, R

=6.2

G

VDS=320V,VGS=10V,

=17A

I

D

See Fig 6 & Fig 12

See Fig 7

Ω

See Fig 13

(4)

(4) (5)

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes;

(1) Repetitive Rating: Pu lse Width Limited by Maximum Junction Temperatu re (2) L=7mH, I (3) I

(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temper ature

Continuous Source Current

S

Pulsed- S o u rce Curren t Diode Forward Voltage

SD

Reverse Recove ry T ime

rr

Reverse Recovery Ch arge

rr

=17A, VDD=50V, RG=27Ω, Starting TJ =25°C

AS

17A, di/dt ≤ 250A/µs, V

≤

SD

DD

, Starting TJ =25°C

BV

≤

DSS

--

17

(1)

--

(4)

--

385

--

4.85

68

1.5

--

ns

µ

A V

C

Integral reverse pn-diode in the MOSFET T

=25°C,IS=17A,VGS=0V

J

T

=25°C,IF=17A

J

di

/dt=100A/µs

F

(4)

µ

1&+$11(/

32:(5 026)(7

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 1 5 V 1 0 V

8.0 V 7 .0 V

1

6.0 V

10

5 .5 V 5 .0 V Bott om : 4.5 V

0

10

, Drain C urrent [A]

D

I

-1

10

-1

10

VDS , Drain-S ource Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

IRFP350A

1

10

150 oC

0

10

25 oC

, Drai n Current [A]

D

I

- 55 oC

-1

1

10

246810

VGS , Gate -Source Voltag e [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 50 V

DS

µ

s Pulse Test

0.60

VGS = 10 V

VGS = 20 V

]

Ω

, [

DS(on)

R

0.45

0.30

0.15

Drain-Source On-Resis tance

@ Note : TJ = 25 oC

0.00 010203040506070

ID , Drain Current [A]

Capacitanc e [pF]

4000

3000

2000

1000

C

iss

C

oss

C

rss

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

@ Notes :

1. V

2. f = 1 MHz

1

10

VDS , Drain-S ource Voltage [V]

GS

= 0 V

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Curr ent

1

10

0

10

@ Notes :

1. V

= 0 V

, Reverse Dra in Current [A] I

DR

10

150 oC

-1

0.20.40.60.81.01.21.41.61.8

25 oC

2. 250

GS

s Pulse Test

VSD , Source-Drai n Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Sour ce Voltage

10

5

, Gate -Source Voltag e [V]

GS

V

0

0 20406080100120

VDS = 80 V

VDS = 200 V

VDS = 320 V

@ Notes : ID = 17.0 A

QG , Tota l Gate Charge [nC]