Fairchild Semiconductor HUFA76445P3, HUFA76445S3S Datasheet
=
=
±
HUFA76445P3, HUFA76445S3S
Data Sheet November 2000
75A, 60V, 0.0075 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB JEDEC TO-263AB
SOURCE
DRAIN
(FLANGE)
HUFA76445P3
DRAIN
GATE
GATE
SOURCE
HUFA76445S3S
DRAIN
(FLANGE)
Symbol
D
G
S
File Number 4987
Features
• Ultra Low On-Resistance
-r
-r
DS(ON)
DS(ON)
= 0.0065 Ω,
= 0.0075 Ω, V
V
GS
GS
10V
5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
GS
Curves
Ordering Information
PART NUMBER PACKAGE BRAND
HUFA76445P3 TO-220AB 76445P
HUFA76445S3S TO-263AB 76445S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76445S3ST.
o
T
= 25
Absolute Maximum Ratings
C, Unless Otherwise Specified
C
HUFA76445P3, HUFA76445S3S UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain Current
Continuous (T
Continuous (T
Continuous (T
Continuous (T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C
C
C
= 25
= 25
= 100
= 100
o
C, V
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
GS
o
C, V
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
GS
o
C, V
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
GS
o
C, V
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
GS
DSS
DGR
GS
D
D
D
D
DM
60 V
60 V
16 V
75
75
75
75
Figure 4
A
A
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, T
J
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
D
L
pkg
310
2.08
-55 to 175
300
260
W/
W
o
C
o
C
o
C
o
C
NOTES:
= 25
J
o
1. T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
C to 150
o
C.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.intersil.com/automotive.html.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUFA76445P3, HUFA76445S3S Rev. A
µ
µ
±
HUFA76445P3, HUFA76445S3S
θ
θ
=
=
Electrical Specifications
T
= 25
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
GS
= 4.5V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
o
C, Unless Otherwise Specified
I
DSS
DSS
GSS
GS(TH)
DS(ON)
JC
R
JA
ON
d(ON)
r
d(OFF)
f
OFF
ON
d(ON)
r
d(OFF)
f
OFF
g(TOT)
g(5)
g(TH)
gs
gd
ISS
OSS
RSS
= 250 µ A, V
D
I
= 250 µ A, V
D
V
= 55V, V
DS
V
= 50V, V
DS
V
= ± 16V - -
GS
V
= V
GS
I
= 75A, V
D
I
= 75A, V
D
I
= 75A, V
D
GS
GS
GS
GS
, I
= 250 µ A (Figure 11) 1 - 3 V
DS
D
= 10V (Figures 9, 10) - 0.0054 0.0065 Ω
GS
= 5V (Figure 9) - 0.0063 0.0075 Ω
GS
= 4.5V (Figure 9) - 0.0066 0.008 Ω
GS
TO-220 and TO-263 - - 0.48
V
= 30V, I
DD
V
GS
(Figures 15, 21, 22)
V
= 30V, I
DD
V
GS
R
= 2.4 Ω
GS
(Figures 16, 21, 22)
V
= 0V to 10V V
GS
V
= 0V to 5V - 68 81 nC
GS
V
= 0V to 1V - 5 6 nC
GS
4.5V, R
10V,
= 75A
D
GS
= 75A
D
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
= 0V (Figure 12) 60 - - V
= 0V , T
o
= -40
C (Figure 12) 55 - - V
C
= 0V - - 1
= 0V, T
= 150
C
o
C - - 250
100 nA
o
--62
o
- - 515 ns
= 2.2 Ω
-18-ns
- 325 - ns
-39-ns
- 135 - ns
- - 260 ns
- - 205 ns
-12-ns
- 126 - ns
-62-ns
- 135 - ns
- - 295 ns
DD
I
= 75A,
D
I
g(REF)
= 30V,
= 1.0mA
- 124 150 nC
(Figures 14, 19, 20)
-14-nC
-30-nC
- 4965 - pF
- 1250 - pF
- 150 - pF
A
A
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
Reverse Recovery Time t
Reverse Recovered Charge Q
©2001 Fairchild Semiconductor Corporation HUFA76445P3, HUFA76445S3S Rev. A
RR
ISD = 75A - - 1.25 V
I
= 35A - - 1.00 V
SD
ISD = 75A, dISD/dt = 100A/µs - - 100 ns
rr
ISD = 75A, dISD/dt = 100A/µs - - 260 nC
Typical Performance Curves
HUFA76445P3, HUFA76445S3S
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-5
10
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
80
60
V
= 4.5V
GS
40
, DRAIN CURRENT (A)
D
I
20
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
10
θJC
1/t2
0
x R
θJC
+ T
V
= 10V
GS
175
t
2
C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
2000
1000
VGS = 10V
, PEAK CURRENT (A)
DM
I
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
-5
10
10
VGS = 5V
-4
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
TC = 25oC
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
I = I
25
0
10
C
150
10
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation HUFA76445P3, HUFA76445S3S Rev. A
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