Fairchild Semiconductor HUFA76439P3, HUFA76439S3S Datasheet

Data Sheet July 2002

71A, 60V, 0.014 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET

HUFA76439P3, HUFA76439S3S

Packaging

JEDEC TO-220AB JEDEC TO-263AB

HUFA76439P3

SOURCE

DRAIN

(FLANGE)

DRAIN

GATE

DRAIN

(FLANGE)

GATE

SOURCE

HUFA76439S3S

Features

• Ultra Low On-Resistance

DS(ON)
DS(ON)

= 0.012Ω, V
= 0.014Ω, V

-r

-r

• Simulation Model s

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

GS
GS

= 10V
= 5V

• UIS Rating Curve

Symbol

D

G

S

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain Current

Continuous (T

Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

= 25oC to 150oC.

1. T

J

CAUTION: Stresses above those l isted i n “Abs olute M axi mum Ra ting s” may caus e pe rman ent da mage to the device. T his i s a str ess o nly ra ting and o pera tion of th e
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

= 25oC, Unless Otherwise Specified

C

• Switching Time vs R

Ordering Information

PART NUMBER PACKAGE BRAND

HUFA76439P3 TO-220AB 76439P
HUFA76439S3S TO-263AB 76439S

NOTE: When orderin g, use the entire part numb er. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76439S3ST.

HUFA76439P3, HUFA76439S3S UNITS

DSS

DGR

GS

D
D
D
D

DM

D

, T

J

STG

L

pkg

Curves

GS

60 V
60 V

±16 V

71
75
50
48

Figure 4

155

1.04

-55 to 175

300
260

A
A
A
A

W

W/oC

o

C

o

C

o

C

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil. com/

All Fa irchild semiconductor products are manufactured, assembled a nd tested under ISO9000 and QS9000 qualit y systems certification.

©2002 Fairchild Semiconductor Corporation HUFA76439P3, HUFA76439S3S Rev. B1

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

HUFA76439P3, HUFA76439S3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain t o Source Breakdown Voltage BV

Zero Gat e V ol tag e D rain Curre nt I

Gate to Sour c e Le ak ag e C urr e nt I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal R esis ta nc e Ju ncti on to Case R
Thermal R es ista nc e Ju ncti on to

Ambient
SWITCHING SPECIFICATIONS (V

= 4.5V)

GS

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charg e Q
Gate Charge at 5V Q
Threshold Gat e Ch arg e Q
Gate to Source Gate Charg e Q
Gate to Drai n “M ill er ” C ha r ge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

I

D

DSS

VDS = 55V, VGS = 0V - - 1 µA
V

GSS

GS(TH)VGS

DS(ON)ID

θJC

R

θJA

ON

d(ON)

d(OFF)

OFF

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS
OSS
RSS

VGS = ±16V - - ±100 nA

I

D

I

D

TO-220 AB an d TO - 26 3A B - - 0.9 6oC/W

VDD = 30V, ID = 50A
V
(Figures 15, 21, 22)

r

f

VDD = 30V, ID = 75A
V
R

r

(Figures 16, 21, 22)

f

VGS = 0V to 5V - 38 45 nC
VGS = 0V to 1V - 2.5 3 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)

= 250µA, VGS = 0V (Figure 12) 60 - - V
= 250µA, VGS = 0V , TC = -40oC (Figur e 12) 55 - - V

= 50V, VGS = 0V, TC = 150oC--250µA

DS

= VDS, ID = 250µA (Figure 11) 1 - 3 V
= 75A, VGS = 10V (Figures 9, 10) - 0.010 0.012 Ω
= 71A, VGS = 5V (Figure 9) - 0.0117 0.014 Ω
= 68A, VGS = 4.5V (Figure 9) - 0.0125 0.015 Ω

--62oC/W

--470ns

= 4.5V, RGS = 3.9Ω

GS

-16-ns

-300- ns

-29-ns

-105- ns

--200ns

--205ns

= 10V,

GS
GS

= 3.9Ω

-11-ns

-125- ns

-45-ns

-125 - ns

--255ns

= 0V to 10V VDD = 30V,

I

= 50A,

D

I

= 1.0mA

g(REF)

-7084nC

(Figures 14, 19, 20)

-8-nC

-19-nC

-2745- pF

-840- pF

-145- pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Vol tage V

Reverse Recovery Time t
Reverse Recovered Charge Q

©2002 Fairchild Semiconductor Corporation HUFA76439P3, HUFA76439S3S Rev. B1

SD

rr
RR

ISD = 54A - - 1.2 5 V

= 27A - - 1.0 0 V

I

SD

ISD = 54A, dISD/dt = 100A/µs--72ns
ISD = 54A, dISD/dt = 100A/µs--140nC

Typical Performance Curves

HUFA76439P3, HUFA76439S3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

80

V

= 10V

GS

60

V

= 4.5V

GS

40

, DRAIN CURRENT (A)

20

D

I

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

0

2

x R

θJC

+ T

t

2

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

1000

, PEAK CURRENT (A)

100

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

50

-5

10

VGS = 10V

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

10

FIGURE 4. PEAK CURRENT CAPABILITY

©2002 Fairchild Semiconductor Corporation HUFA76439P3, HUFA76439S3S Rev. B1

1