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Data Sheet December 2001
44A, 60V, 0.025 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFETs
Packaging
JEDEC TO-220AB JEDEC TO-263AB
SOURCE
DRAIN
(FLANGE)
HUFA76429P3
DRAIN
GATE
GATE
SOURCE
HUFA76429S3S
DRAIN
(FLANGE)
Symbol
D
HUFA76429P3, HUFA76429S3S
Features
• Ultra Low On-Resistance
-r
-r
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Cu rrent vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
Ordering Information
DS(ON)
DS(ON)
= 0.022Ω, V
= 0.025Ω, V
GS
= 10V
GS
= 5V
GS
Curves
G
S
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (T
Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
= 25oC to 150oC.
1. T
J
CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
TC = 25oC, Unless Otherwise Specified
PART NUMBER PACKAGE BRAND
HUFA76429P3 TO-220AB 76429P
HUFA76429S3S TO-263AB 76429S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76429S3ST.
HUFA76429P3, HUFA76429S3S UNITS
DSS
DGR
GS
D
D
D
D
DM
D
, T
J
STG
L
pkg
60 V
60 V
±16 V
44
47
31
30
Figure 4
110
0.74
-55 to 175
300
260
A
A
A
A
W
W/oC
o
C
o
C
o
C
This product has be en desi gned t o mee t t he ex tre me test con diti ons a nd e nviro nment dema nded by the autom otive indu str y. Fo r a copy
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corpo ration HUFA76429P3, HUFA76429S3S Rev. B
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
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HUFA76429P3, HUFA76429S3S
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
= 4.5V)
GS
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain "Miller" Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSID
I
D
DSS
VDS = 55V, VGS = 0V - - 1 µA
V
GSS
GS(TH)VGS
DS(ON)ID
θJC
R
θJA
ON
d(ON)
d(OFF)
OFF
ON
d(ON)
d(OFF)
OFF
g(TOT)VGS
g(5)
g(TH)
ISS
OSS
RSS
VGS = ±16V - - ±100 nA
I
D
I
D
TO-220 and TO-263 - - 1.36oC/W
VDD = 30V, ID = 30A
V
(Figures 15, 21, 22)
r
f
VDD = 30V, ID = 47A
V
(Figures 16, 21, 22)
r
f
VGS = 0V to 5V - 21 25 nC
VGS = 0V to 1V - 1.3 1.6 nC
gs
gd
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
= 250µA, VGS = 0V (Figure 12) 60 - - V
= 250µA, VGS = 0V , TC = -40oC (Figure 12) 55 - - V
= 50V, VGS = 0V, TC = 150oC - - 250 µA
DS
= VDS, ID = 250µA (Figure 11) 1 - 3 V
= 47A, VGS = 10V (Figures 9, 10) - 0.018 0.022 Ω
= 31A, VGS = 5V (Figure 9) - 0.021 0.025 Ω
= 30A, VGS = 4.5V (Figure 9) - 0.022 0.027 Ω
--62oC/W
- - 325 ns
= 4.5V, RGS = 7.5Ω
GS
-13-ns
- 203 - ns
-30-ns
-74-ns
- - 155 ns
- - 160 ns
= 10V,RGS = 8.2Ω
GS
-7.8-ns
- 100 - ns
-51-ns
- 104 - ns
- - 235 ns
= 0V to 10V VDD = 30V,
= 31A,
I
D
= 1.0mA
I
g(REF)
-3846nC
(Figures 14, 19, 20)
-3.8-nC
-9.7-nC
- 1480 - pF
- 440 - pF
-90-pF
Source to Drain Diode Specifications
PARAMETER SYMBOL TE ST CONDIT IONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
©2001 Fairchild Semiconductor Corpo ration HUFA76429P3, HUFA76429S3S Rev. B
SD
rr
RR
ISD = 44A - - 1.25 V
= 22A - - 1.00 V
I
SD
ISD = 31A, dISD/dt = 100A/µs--98ns
ISD = 31A, dISD/dt = 100A/µs - - 230 nC
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Typical Performance Curves
HUFA76429P3, HUFA76429S3S
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 17
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-5
10
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
50
40
V
= 10V
GS
30
V
= 4.5V
GS
20
, DRAIN CURRENT (A)
D
I
10
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
θJC
10
1/t2
0
x R
θJC
+ T
17
t
2
C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
600
100
, PEAK CURRENT (A)
DM
I
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
30
-5
10
VGS = 10V
10
-4
VGS = 5V
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
TC = 25oC
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
I = I
25
0
10
C
150
10
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corpo ration HUFA76429P3, HUFA76429S3S Rev. B
1