Fairchild Semiconductor HUFA76429D3, HUFA76429D3S Datasheet

=

=

±

HUFA76429D3, HUFA76429D3S

Data Sheet December 2001

20A, 60V, 0.027 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFETs

Packaging

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN

(FLANGE)

HUFA76429D3

Symbol

DRAIN

(FLANGE)

HUFA76429D3S

Features

• Ultra Low On-Resistance

-r

-r

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electriecal Models

- Spice and SABER Thermal Impedance Models

- www.fairchild.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs R

DS(ON)

DS(ON)

= 0.023 Ω,
= 0.027 Ω,

V

V

GS

GS

GS

Curves

10V
5V

D

Ordering Information

PART NUMBER PACKAGE BRAND

G

HUFA76429D3 TO-251AA 76429D

HUFA76429D3S TO-252AA 76429D

S

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76429D3ST.

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

C

HUFA76429D3, HUFA76429D3S UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T
Continuous (T
Continuous (T
Continuous (T

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

= 25

C

= 25

C

= 100

C

= 100

C

o

C, V

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

GS

o

C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

GS

o

C, V

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

GS

o

C, V

= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

GS

DSS

DGR

GS

D
D
D
D

DM

60 V

60 V

16 V

20
20
20
20

Figure 4

A
A
A
A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

D

L

pkg

110

0.74

-55 to 175

300
260

W/

W

o

C

o

C

o

C

o

C

NOTES:

= 25

J

o

1. T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

C to 150

o

C.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corporation HUFA76429D3, HUFA76429D3S Rev. B

µ

µ

±

HUFA76429D3, HUFA76429D3S

Ω

Ω

Ω

θ

θ

=

=

Electrical Specifications

T

= 25

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V

Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R

Thermal Resistance Junction to
Ambient

SWITCHING SPECIFICATIONS (V

= 4.5V)

GS

Turn-On Time t

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Turn-Off Time t

SWITCHING SPECIFICATIONS (V

GS

= 10V)

Turn-On Time t

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q

Gate Charge at 5V Q

Threshold Gate Charge Q

Gate to Source Gate Charge Q

Gate to Drain "Miller" Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

o

C, Unless Otherwise Specified

I

DSS

DSS

GSS

GS(TH)

DS(ON)

JC

R

JA

ON

d(ON)

r

d(OFF)

f

OFF

ON

d(ON)

r

d(OFF)

f

OFF

g(TOT)

g(5)

g(TH)

gs

gd

ISS

OSS

RSS

= 250 µ A, V

D

I

= 250 µ A, V

D

V

= 55V, V

DS

V

= 50V, V

DS

V

= ± 16V - -

GS

V

= V

GS

I

= 20A, V

D

I

= 20A, V

D

I

= 20A, V

D

GS

GS

GS

GS

, I

= 250 µ A (Figure 11) 1 - 3 V

DS

D

= 10V (Figures 9, 10) - 0.0205 0.023

GS

= 5V (Figure 9) - 0.024 0.027

GS

= 4.5V (Figure 9) - 0.025 0.029

GS

TO-251 and TO-252 - - 1.36

V

= 30V, I

DD

V

GS

(Figures 15, 21, 22)

V

= 30V, I

DD

V

GS

4.5V, R

10V,R

= 20A

D

GS

= 20A

D

GS

(Figures 16, 21, 22)

V

= 0V to 10V V

GS

V

= 0V to 5V - 21 25 nC

GS

V

= 0V to 1V - 1.3 1.6 nC

GS

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)

= 0V (Figure 12) 60 - - V

= 0V , T

= -40

C

o

C (Figure 12) 55 - - V

= 0V - - 1

= 0V, T

= 150

C

o

C - - 250

100 nA

- - 100

- - 220 ns

= 7.5 Ω

-13-ns

- 134 - ns

-30-ns

-55-ns

- - 130 ns

- - 65 ns

= 8.2 Ω

- 7.7 - ns

-36-ns

-60-ns

-56-ns

- - 175 ns

DD

I

= 20A,

D

I

g(REF)

= 30V,

= 1.0mA

-3846nC

(Figures 14, 19, 20)

- 3.8 - nC

- 9.7 - nC

- 1480 - pF

- 440 - pF

-90-pF

o

o

A

A

C/W

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Reverse Recovery Time t

Reverse Recovered Charge Q

©2001 Fairchild Semiconductor Corporation HUFA76429D3, HUFA76429D3S Rev. B

RR

ISD = 20A - - 1.25 V

= 10A - - 1.00 V

I

SD

ISD = 20A, dISD/dt = 100A/µs--80ns

rr

ISD = 20A, dISD/dt = 100A/µs - - 230 nC

Typical Performance Curves

25

15

20

50 75 100 125 150

0

25

I

D

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

V

GS

= 4.5V

V

GS

= 10V

175

5

10

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

HUFA76429D3, HUFA76429D3S

150

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

600

VGS = 10V

100

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

TC = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

1/t2

x R

θJC

0

10

o

C DERATE PEAK

25

θJC

175 - T

150

+ T

t

2

C

1

10

C

, PEAK CURRENT (A)

DM

I

10

©2001 Fairchild Semiconductor Corporation HUFA76429D3, HUFA76429D3S Rev. B

VGS = 5V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY