Fairchild Semiconductor HUFA76413DK8 Datasheet

©2003 Fairchild Semiconductor Corporation

January 2003

Rev. B

HUFA76413DK8T

HUFA76413DK8T

N-Channel Logic Level UltraFET® Power MOSFET
60V, 4.8A, 56m Ω

General Description

These N-Channel power MOSFETs are manufactured us­ing the innovative UltraFET

®

process. This advanced pro­cess technology achieves the lowest possible on­resistance per silicon area, resulting in outstanding perfor­mance. This device is capable of withstanding high energy
in the avalanche mode and the diode exhibits very low re­verse recovery time and stored charge. It was designed for
use in applications where power efficiency is important,
such as switching regulators, switching convertors, mot or
drivers, relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.

Applications

• Motor and Load Control

• Powertrain Management

Features

• 150°C Maximum Junction Temperature

• UIS Capability (Single Pulse and Repetitive Pulse)

• Ultra-Low On-Resistance r

DS(ON)

= 0.049Ω, VGS = 10V

• Ultra-Low On-Resistance r

DS(ON)

= 0.056Ω, VGS = 5V

MOSFET Maximum Ratings T

A

= 25°C unless otherwise noted

Thermal Characteristics

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.

Symbol Parameter Ratings Units

V

DSS

Drain to Source Voltage 60 V

V

GS

Gate to Source Voltage ±16 V

I

D

Drain Current

5.1 A

Continuous (T

C

= 25oC, VGS = 10V)

Continuous (T

C

= 25oC, VGS = 5V) 4.8 A

Continuous (T

C

= 125oC, VGS = 5V, R

θJA

= 228oC/W) 1 A

Pulsed Figure 4 A

E

AS

Single Pulse Avalanche Energy (Note 1) 260 mJ

P

D

Power dissipation 2.5 W
Derate above 25

o

C0.02W/

o

C

T

J

, T

STG

Operating and Storage Temperature -55 to 150

o

C

R

θJA

Thermal Resistance Junction to Ambient SO-8 (Note 2) 50

o

C/W

R

θJA

Thermal Resistance Junction to Ambient SO-8 (Note 3) 191

o

C/W

R

θJA

Thermal Resistance Junction to Ambient SO-8 (Note 4) 228

o

C/W

G1 (2)

D1 (8)

S1 (1)

D1 (7)

D2 (6) D2 (5)

S2 (3) G2 (4)

SO-8

1

©2003 Fairchild Semiconductor Corporation Rev. B

HUFA76413DK8T

Package Marking and Ordering Information

Electrical Characteristics T

A

= 25°C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

(VGS = 5V)

Drain-Source Diode Characteristics

Notes:
1: Starting TJ = 25°C, L = 20mH, IAS = 5.1A
2: R

θJA

is 50 oC/W when mounted on a 0.5 in2 copper pad on FR-4 at 1 second.

3: R

θJA

is 191 oC/W when mounted on a 0.027 in2 copper pad on FR-4 at 1000 seconds.

4: R

θJA

is 228 oC/W when mounted on a 0.006 in2 copper pad on FR-4 at 1000 seconds.

Device Marking Device Package Reel Size Tape Width Quantity

76413DK8 HUFA76413DK8T SO-8 330mm 12mm 2500 units

Symbol Parameter Test Conditions Min Typ Max Units

B

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 50V - - 1

µA

V

GS

= 0V TA = 150oC - - 250

I

GSS

Gate to Source Leakage Current VGS = ±16V - - ±100 nA

V

GS(TH)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

r

DS(ON)

Drain to Source On Resistance

I

D

= 5.1A, VGS = 10V - 0.041 0. 049

Ω

I

D

= 4.8A, VGS = 5V - 0.048 0. 056

I

D

= 4.8A, VGS = 5V

T

A

= 150oC

- 0.091 0.106

C

ISS

Input Capacitance

V

DS

= 25V, VGS = 0V,

f = 1MHz

- 620 - pF

C

OSS

Output Capacitance - 180 - pF

C

RSS

Reverse Transfer Capacitance - 30 - pF

Q

g(TOT)

Total Gate Charge at 10V VGS = 0V to 10V

V

DD

= 30V

I

D

= 4.8A

I

g

= 1.0mA

18 23 nC

Q

g(5)

Total Gate Charge at 5V VGS = 0V to 5V - 10 13 nC

Q

g(TH)

Threshold Gate Charge VGS = 0V to 1V - 0.6 0.8 nC

Q

gs

Gate to Source Gate Charge - 1.8 - nC

Q

gd

Gate to Drain “Miller” Charge - 5 - nC

t

ON

Turn-On Time

V

DD

= 30V, ID = 1A

V

GS

= 5V, RGS = 16Ω

- - 44 ns

t

d(ON)

Turn-On Delay Time - 10 - ns

t

r

Rise Time - 19 - ns

t

d(OFF)

Turn-Off Delay Time - 45 - ns

t

f

Fall Time - 27 - ns

t

OFF

Turn-Off Time - - 108 ns

V

SD

Source to Drain Diode Voltage

I

SD

= 4.8A - - 1.25 V

I

SD

= 2.4A - - 1.0 V

t

rr

Reverse Recovery Time ISD = 4.8A, dISD/dt = 100A/µs- - 43 ns

Q

RR

Reverse Recovered Charge ISD = 4.8A, dISD/dt = 100A/µs- - 55 nC

©2003 Fairchild Semiconductor Corporation Rev. B

HUFA76413DK8T

Typical Characteristics T

A

= 25°C unless otherwise noted

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

Figure 2. Maximum Contin uous Drain Current vs

Case Temperature

Figure 3. Normalized Maximum Transient Thermal Impedance

Figure 4. Peak Current Capability

TA, AMBIENT TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

0.2

0.4

0.6

0.8

1.0

1.2

125

0

2

4

6

25 50 75 100 125 150

-I

D

, DRAIN CURRENT (A)

TA, CASE TEMPERATURE (oC)

V

GS

= 10V, R

θJA

=50oC/W

V

GS

= 5V, R

θJA

=228oC/W

0.001

0.01

0.1

1

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

4

10

-5

t, RECTANGULAR PULSE DURATION (s)

Z

θJA

, NORMALIZED

THERMAL IMPEDANCE

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

P

DM

t

1

t

2

0.5

0.2

0.1

0.05

0.01

0.02

DUTY CYCLE - DESCENDING ORDER

SINGLE PULSE

VGS = 10V

R

θJA

=50oC/W

10

100

300

2

10

-5

10

-3

10

-4

10

-2

10

-1

10

0

10

1

10

2

10

3

I

DM

, PEAK CURRENT (A)

t, PULSE WIDTH (s)

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 5V

TA = 25oC

I = I

25

175 - T

A

150

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

VGS = 10V

R

θJA

=50oC/W

©2003 Fairchild Semiconductor Corporation Rev. B

HUFA76413DK8T

Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching

Capability

Figure 7. Transfer Ch aracteri stics Figure 8. Saturation Character istics

Figure 9. Drain to Source On Resis tanc e vs Ga te

Voltage and Drain Current

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

Typical Characteristics T

A

= 25°C unless otherwise noted

1

10

100

110100

0.2

200

VDS, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

TJ = MAX RATED
TA = 25oC

SINGLE PULSE

LIMITED BY r

DS(ON)

AREA MAY BE

OPERATION IN THIS

100µs

10ms

1ms

1

10

0.1 1 10

15

40

I

AS

, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC

STARTING TJ = 150oC

tAV = (L)(IAS)/(1.3*RATED BV

DSS

- VDD)

If R = 0
If R ≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BV

DSS

- VDD) +1]

0

5

10

15

20

25

1.5 2.0 2.5 3.0 3.5 4.0

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

DD

= 15V

TJ = 150oC

TJ = 25oC

TJ = -55oC

0

5

10

15

20

25

0 0.5 1.0 1.5 2.0

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 3.5V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 3V

TA = 25oC

VGS = 5V

VGS = 10V

40

50

60

70

80

90

100

246810

ID = 1A

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 5.1A

r

DS(ON)

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

0.5

1.0

1.5

2.0

-80 -40 0 40 80 120 160

NORMALIZED DRAIN TO SOURCE

TJ, JUNCTION TEMPERATURE (oC)

ON RESISTANCE

VGS = 10V, ID =5.1A

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX