Fairchild Semiconductor HUFA76407DK8T Datasheet

5

Data Sheet December 2001

3.5A, 60V, 0.105 Ohm, Dual N-Channel,
Logic Level UltraFET® Power MOSFET

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

3

4

Symbol

SOURCE1 (1)

GATE1 (2)

DRAIN 1 (8)
DRAIN 1 (7)

HUFA76407DK8

Features

• Ultra Low On-Resistance

-r

-r

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- SPICE and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Cu rrent vs Pulse Width Curve

• UIS Rating Curve

• Transient Thermal Impedance Curve vs Board Mounting
Area

• Switching Time vs R

DS(ON)
DS(ON)

= 0.090Ω, V
= 0.105Ω, V

GS

= 10V

GS

= 5V

GS

Curves

SOURCE2 (3)

GATE2 (4)

Absolute Maximum Ratings

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T

Continuous (TA = 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 100oC, VGS = 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 100oC, VGS = 4.5V) (Figure 2) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

1. T

= 25oC to 125oC.

J

o

2. 50

C/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 1 second.

o

3. 228

CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has be en desi gned t o mee t t he ex tre me test con diti ons a nd e nviro nment dema nded by the autom otive indu str y. Fo r a copy

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corpo ration HUFA76407DK8 Rev. B

= 25oC, VGS = 5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

A

C/W measured using FR-4 board with 0.006 in2 (3.87 mm2) copper pad at 1000 seconds.

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

DRAIN 2 (6)
DRAIN 2 (5)

TA = 25oC, Unless Otherwise Specified

Ordering Information

PART NUMBER PACKAGE BRAND

HUFA76407DK8 MS-012AA 76407DK8

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76407DK8T.

HUFA76407DK8 UNITS

DSS

DGR

GS

D
D
D
D

DM

D

, T

J

STG

L

pkg

60 V
60 V

±16 V

3.5

3.8

1.0

1.0

Figure 4

2.5
20

-55 to 150

300
260

A
A
A
A

W

mW/oC

o

C

o

C

o

C

HUFA76407DK8

Electrical Specifications

TA = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to
Ambient

SWITCHING SPECIFICATIONS (V

GS

= 4.5V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

I

D

DSS

VDS = 55V, VGS = 0V - - 1 µA
V

GSS

GS(TH)VGS

DS(ON)ID

R

θJA

VGS = ±16V - - ±100 nA

I

D

I

D

Pad Area = 0.76 in2 (490.3 mm2) (Note 2) - - 50
Pad Area = 0.027 in
Pad Area = 0.006 in

ON

d(ON)

d(OFF)

OFF

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS
OSS
RSS

VDD = 30V, ID = 1.0A
V
(Figures 15, 21, 22)

r

f

VDD = 30V, ID = 3.8A
V
R
(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 5.3 6.4 nC
VGS = 0V to 1V - 0.42 0.5 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)

= 250µA, VGS = 0V (Figure 12) 60 - - V
= 250µA, VGS = 0V , TA = -40oC (Figure 12) 55 - - V

= 50V, VGS = 0V, TA = 150oC - - 250 µA

DS

= VDS, ID = 250µA (Figure 11) 1 - 3 V
= 3.8A, VGS = 10V (Figures 9, 10) - 0.075 0.090 Ω
= 1.0A, VGS = 5V (Figure 9) - 0.088 0.105 Ω
= 1.0A, VGS = 4.5V (Figure 9) - 0.092 0.110 Ω

o

2

(17.4 mm2) (Figure 23) - - 191

2

(3.87 mm2) (Figure 23) - - 228

o
o

- - 57 ns

= 4.5V, RGS = 27Ω

GS

-8-ns

-30-ns

-25-ns

-25-ns

- - 75 ns

- - 24 ns

= 10V,

GS
GS

= 30Ω

-5-ns

-11-ns

-46-ns

-31-ns

- - 116 ns

= 0V to 10V VDD = 30V,

= 1.0A,

I

D

= 1.0mA

I

g(REF)

- 9.4 11.2 nC

(Figures 14, 19, 20)

-1.05- nC

-2.4-nC

- 330 - pF

- 100 - pF

-18-pF

C/W
C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

©2001 Fairchild Semiconductor Corpo ration HUFA76407DK8 Rev. B

SD

rr

RR

ISD = 3.8A - - 1.25 V

= 1.0A - - 1.00 V

I

SD

ISD = 1.0A, dISD/dt = 100A/µs--48ns
ISD = 1.0A, dISD/dt = 100A/µs--89nC

Typical Performance Curves

0

0

HUFA76407DK8

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 15

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJA

0.01

Z

THERMAL IMPEDANCE

0.001

-5

10

-4

10

SINGLE PULSE

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

4

V

GS

= 10V, R

θ

JA

= 50oC/W

3

2

, DRAIN CURRENT (A)

D

1

I

V

GS

= 4.5V, R

= 228oC/W

θ

JA

0

25

50 75 100 125 15

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

R

θJA

P

DM

t

1

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

θJA

1/t2

x R

10

2

θJA

+ T

= 228oC/W

t

2

A

3

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

200

100

10

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

1

-5

10

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

10

R

θJA

0

= 228oC/W

TC = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

25

1

10

10

150 - T

125

2

A

10

FIGURE 4. PEAK CURRENT CAPABILITY

©2001 Fairchild Semiconductor Corpo ration HUFA76407DK8 Rev. B

3

0
0

.0

4

0

HUFA76407DK8

Typical Performance Curves

500

100

10

, DRAIN CURRENT (A)

1

D

I

0.1

R

= 228oC/W

θJA

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

10 20

(Continued)

SINGLE PULSE
TJ = MAX RATED
T

A

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

20

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 15V

V

DD

15

10

TJ = -55oC

TJ = 150oC

= 25oC

100µs

1ms

10ms

100

TJ = 25oC

50

10

, AVALANCHE CURRENT (A)

AS

I

1

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

≠

0

If R
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

STARTING TJ = 150oC

0.01 0.1 1 1
tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

20

15

10

= 10V

V

GS

VGS = 5V

V

= 4.5V

GS

V

= 4V

GS

VGS = 3.5V

DRAIN CURRENT (A)

D,

5

I

0

2.0 2.5 3.0 3.5 4.5 5
VGS, GATE TO SOURCE VOLTAGE (V)

4.0

, DRAIN CURRENT (A)

5

D

I

TA = 25oC

0

0123

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SA TURATION CHARACTERISTICS

150

ID = 3.8A

120

ID = 1A

, DRAIN TO SOURCE

90

ON RESIST ANCE (mΩ)

DS(ON)

r

60

3579

246810

VGS, G ATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.5

1.0

ON RESISTANCE

NORMALIZED DRAIN TO SOURCE

0.5

0.5

-80 -40 0 40 80 120 16
TJ, JUNCTION TEMPERATURE (oC)

VGS = 3V

VGS = 10V, ID = 3.8A

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

©2001 Fairchild Semiconductor Corpo ration HUFA76407DK8 Rev. B

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE