Fairchild Semiconductor HUFA75823D3, HUFA75823D3S Datasheet

Data Sheet December 2001

14A, 150V, 0.150 Ohm, N-Channel,
UltraFET® Power MOSFET

Packaging

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN

(FLANGE)

HUF A75 823D3

HUFA75823D3S

DRAIN

(FLANGE)

HUFA75823D3, HUFA75823D3S

Features

• Ultra Low On-Resistance

-r

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Cu rrent vs Pulse Width Curve

• UIS Rating Curve

DS(ON)

= 0.150Ω, V

GS

= 10V

Symbol

D

G

S

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain Current

Continuous (T

Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

= 25oC to 150oC.

1. T

J

CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

C

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

GS

= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 25oC, Unless Otherwise Specified

Ordering Information

PART NUMBER PACKAGE BRAND

HUFA75823D3 TO-251AA 75823D
HUFA75823D3S TO-252AA 75823D

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75823D3ST.

HUFA75823D3, HUFA75823D3S UNITS

DSS

DGR

GS

D
D

DM

D

, T

J

STG

L

pkg

150 V
150 V
±20 V

14
10

Figure 4

85

0.57

-55 to 175

300
260

A
A

W

W/oC

o

C

o

C

o

C

This product has be en desi gned t o mee t t he ex tre me test con diti ons a nd e nviro nment dema nded by the autom otive indu str y. Fo r a copy

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corpo ration HUFA75823D3, HUFA75823D3S Rev. B

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

HUFA75823D3, HUFA75823D3S

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

Ambient
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain "Miller" Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

VDS = 140V, VGS = 0V - - 1 µA
V

GSS

GS(TH)VGS

DS(ON)ID

θJC

R

θJA

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(10)

g(TH)

ISS

OSS

RSS

VGS = ±20V - - ±100 nA

TO-251 and TO-252 - - 1.76oC/W

VDD = 75V, ID = 14A
V
R
(Figures 18, 19)

r

f

VGS = 0V to 10V - 23 29 nC
VGS = 0V to 2V - 1.5 1.9 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

= 250µA, VGS = 0V (Figure 11) 150 - - V

= 135V, VGS = 0V, TC = 150oC - - 250 µA

DS

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 14A, VGS = 10V (Figure 9) - 0.125 0.150 Ω

- - 100

o

- - 48 ns

= 10V,

GS
GS

= 12Ω

-7.7-ns

-24-ns

-45-ns

-26-ns

- - 105 ns

= 0V to 20V VDD = 75V,

I

= 14A,

D

= 1.0mA

I

g(REF)

-4354nC

(Figures 13, 16, 17)

-3.4-nC

-8.8-nC

- 800 - pF

- 180 - pF

-65-pF

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TE ST CONDIT IONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

©2001 Fairchild Semiconductor Corpo ration HUFA75823D3, HUFA75823D3S Rev. B

SD

rr

RR

ISD = 14A - - 1.25 V
I

= 7A - - 1.00 V

SD

ISD = 14A, dISD/dt = 100A/µs - - 150 ns
ISD = 14A, dISD/dt = 100A/µs - - 750 nC

Typical Performance Curves

5

HUFA75823D3, HUFA75823D3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIE R

0

0255075100 17

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

25

50 75 100 125 150

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

-2

10

t, RECTANGULAR P UL SE DU R ATION (s)

TC, CASE TEMPERATURE (oC)

P

DM

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

1/t2

x R

θ

JC

0

10

V

= 10V

GS

175

t

1

t

2

+ T

θ

JC

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

200

100

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

10

-5

10

VGS = 10V

-4

10

-3

10

-2

10

10

-1

t, PULSE WIDTH (s)

TC = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

0

10

C

150

1

10

FIGURE 4. PEAK CURRENT CAPABILITY

©2001 Fairchild Semiconductor Corpo ration HUFA75823D3, HUFA75823D3S Rev. B