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Data Sheet December 2001
14A, 150V, 0.150 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC TO-251AA JEDEC TO-252AA
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
HUF A75 823D3
HUFA75823D3S
DRAIN
(FLANGE)
HUFA75823D3, HUFA75823D3S
Features
• Ultra Low On-Resistance
-r
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Cu rrent vs Pulse Width Curve
• UIS Rating Curve
DS(ON)
= 0.150Ω, V
GS
= 10V
Symbol
D
G
S
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain Current
Continuous (T
Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
= 25oC to 150oC.
1. T
J
CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
C
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 25oC, Unless Otherwise Specified
Ordering Information
PART NUMBER PACKAGE BRAND
HUFA75823D3 TO-251AA 75823D
HUFA75823D3S TO-252AA 75823D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75823D3ST.
HUFA75823D3, HUFA75823D3S UNITS
DSS
DGR
GS
D
D
DM
D
, T
J
STG
L
pkg
150 V
150 V
±20 V
14
10
Figure 4
85
0.57
-55 to 175
300
260
A
A
W
W/oC
o
C
o
C
o
C
This product has be en desi gned t o mee t t he ex tre me test con diti ons a nd e nviro nment dema nded by the autom otive indu str y. Fo r a copy
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corpo ration HUFA75823D3, HUFA75823D3S Rev. B
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
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HUFA75823D3, HUFA75823D3S
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain "Miller" Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSID
DSS
VDS = 140V, VGS = 0V - - 1 µA
V
GSS
GS(TH)VGS
DS(ON)ID
θJC
R
θJA
ON
d(ON)
d(OFF)
OFF
g(TOT)VGS
g(10)
g(TH)
ISS
OSS
RSS
VGS = ±20V - - ±100 nA
TO-251 and TO-252 - - 1.76oC/W
VDD = 75V, ID = 14A
V
R
(Figures 18, 19)
r
f
VGS = 0V to 10V - 23 29 nC
VGS = 0V to 2V - 1.5 1.9 nC
gs
gd
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
= 250µA, VGS = 0V (Figure 11) 150 - - V
= 135V, VGS = 0V, TC = 150oC - - 250 µA
DS
= VDS, ID = 250µA (Figure 10) 2 - 4 V
= 14A, VGS = 10V (Figure 9) - 0.125 0.150 Ω
- - 100
o
- - 48 ns
= 10V,
GS
GS
= 12Ω
-7.7-ns
-24-ns
-45-ns
-26-ns
- - 105 ns
= 0V to 20V VDD = 75V,
I
= 14A,
D
= 1.0mA
I
g(REF)
-4354nC
(Figures 13, 16, 17)
-3.4-nC
-8.8-nC
- 800 - pF
- 180 - pF
-65-pF
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TE ST CONDIT IONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
©2001 Fairchild Semiconductor Corpo ration HUFA75823D3, HUFA75823D3S Rev. B
SD
rr
RR
ISD = 14A - - 1.25 V
I
= 7A - - 1.00 V
SD
ISD = 14A, dISD/dt = 100A/µs - - 150 ns
ISD = 14A, dISD/dt = 100A/µs - - 750 nC
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Typical Performance Curves
HUFA75823D3, HUFA75823D3S
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIE R
0
0255075100 17
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
JC
θ
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-5
10
-4
10
-3
10
15
12
9
6
, DRAIN CURRENT (A)
D
I
3
0
25
50 75 100 125 150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
-2
10
t, RECTANGULAR P UL SE DU R ATION (s)
TC, CASE TEMPERATURE (oC)
P
DM
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
1/t2
x R
θ
JC
0
10
V
= 10V
GS
175
t
1
t
2
+ T
θ
JC
C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
200
100
, PEAK CURRENT (A)
DM
I
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
10
VGS = 10V
-4
10
-3
10
-2
10
10
-1
t, PULSE WIDTH (s)
TC = 25oC
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
I = I
25
0
10
C
150
1
10
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corpo ration HUFA75823D3, HUFA75823D3S Rev. B