Fairchild Semiconductor HUFA75645P3, HUFA75645S3S Datasheet
=
±
HUFA75645P3, HUFA75645S3S
Data Sheet December 2001
75A, 100V, 0.014 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
JEDEC TO-220AB JEDEC TO-263AB
Features
SOURCE
DRAIN
(FLANGE)
HUFA75645P3
DRAIN
GATE
GATE
SOURCE
HUFA75645S3S
DRAIN
(FLANGE)
• Ultra Low On-Resistance
-r
DS(ON)
= 0.014 Ω,
10V
V
GS
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.fairchild.com
• Peak Current vs Pulse Width Curve
Symbol
D
G
S
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (T
Continuous (T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
1. T
= 25
J
CAUTION: Stresses above those listed in “Absol24ute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
o
C to 150
C
C
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
o
= 25
C, V
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
GS
o
= 100
C, V
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
GS
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
o
T
= 25
C, Unless Otherwise Specified
C
• UIS Rating Curve
Ordering Information
PART NUMBER PACKAGE BRAND
HUFA75645P3 TO-220AB 75645P
HUFA75645S3S TO-263AB 75645S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75645S3ST.
HUFA75645P3, HUFA75645S3S UNITS
DSS
DGR
GS
D
D
DM
D
, T
J
STG
L
pkg
100 V
100 V
20 V
75
65
Figure 4
310
2.07
-55 to 175
300
260
W/
A
A
W
o
C
o
C
o
C
o
C
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUFA75645P3, HUFA75645S3S Rev. B
µ
µ
±
Ω
θ
θ
=
HUFA75645P3, HUFA75645S3S
Electrical Specifications
o
T
= 25
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
C, Unless Otherwise Specified
I
DSS
DSS
GSS
GS(TH)
DS(ON)
JC
R
JA
ON
d(ON)
r
d(OFF)
f
OFF
= 250 µ A, V
D
V
= 95V, V
DS
V
= 90V, V
DS
V
= ± 20V - -
GS
V
= V
GS
DS
I
= 75A, V
D
TO-220 and TO-263 - - 0.48
V
= 50V, I
DD
V
10V,
GS
R
= 2.5 Ω
GS
(Figures 18, 19)
= 0V (Figure 11) 100 - - V
GS
= 0V - - 1
GS
= 0V, T
GS
, I
= 250 µ A (Figure 10) 2 - 4 V
D
= 10V (Figure 9) - 0.0115 0.014
GS
= 75A
D
= 150
C
o
C - - 250
--62
- - 197 ns
-14-ns
- 117 - ns
-41-ns
- 97 - ns
- - 207 ns
100 nA
o
C/W
o
C/W
A
A
Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
g(TOT)
g(10)
g(TH)
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
ISS
OSS
RSS
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
SD
RR
gs
gd
rr
V
= 0V to 20V V
GS
V
= 0V to 10V - 106 127 nC
GS
V
= 0V to 2V - 6.8 8.2 nC
GS
= 50V,
DD
I
= 75A,
D
I
= 1.0mA
g(REF)
(Figures 13, 16, 17)
- 198 238 nC
-14-nC
-41-nC
V
= 25V, V
DS
GS
= 0V,
- 3790 - pF
f = 1MHz
(Figure 12)
- 810 - pF
- 230 - pF
I
= 75A - - 1.25 V
SD
I
= 35A - - 1.00 V
SD
I
= 75A, dI
SD
I
= 75A, dI
SD
/dt = 100A/ µ s - - 145 ns
SD
/dt = 100A/ µ s - - 360 nC
SD
©2001 Fairchild Semiconductor Corporation HUFA75645P3, HUFA75645S3S Rev. B
Typical Performance Curves
20
40
60
80
50 75 100 125 150
0
25
I
D
, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
V
GS
= 10V
175
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
TC, CASE TEMPERATURE (oC)
HUFA75645P3, HUFA75645S3S
150
125
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-5
10
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
θJC
10
1/t2
0
x R
θJC
+ T
t
2
C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
2000
1000
, PEAK CURRENT (A)
DM
I
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
-5
10
VGS = 10V
-4
10
-3
10
t, PULSE WIDTH (s)
-2
10
-1
10
TC = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
o
C DERATE PEAK
25
0
10
175 - T
150
C
1
10
©2001 Fairchild Semiconductor Corporation HUFA75645P3, HUFA75645S3S Rev. B
FIGURE 4. PEAK CURRENT CAPABILITY
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