Fairchild Semiconductor HUFA75631SK8 Datasheet

Data Sheet December 2001

5.5A, 100V, 0.039 Ohm, N-Channel,
UltraFET® Power MOSFET

Packaging

JEDEC MS-012AA

BRANDING DASH

5

1

2

3

4

Symbol

HUFA75631SK8

Features

• Ultra Low On-Resistance

-r

DS(ON)

= 0.039Ω,

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Cu rrent vs Pulse Width Curve

V

= 10V

GS

SOURCE (1)
SOURCE (2)
SOURCE (3)

GATE (4)

Absolute Maximum Ratings

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T

Continuous (TA = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

= 25oC to 150oC.

1. T

J

o

C/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second.

2. 50

o

3. 152

C/W measured using FR-4 board with 0.054 in2 (34.8 mm2) copper pad at 1000 seconds

o

C/W measured using FR-4 board with 0.0115 in2 (7.42 mm2) copper pad at 1000 seconds

4. 189

CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

A

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)

TA = 25oC, Unless Otherwise Specified

Ordering Information

PART NUMBER PACKAGE BRAND

HUFA75631SK8 MS-012AA 75631SK8

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75631SK8T.

HUFA75631SK8 UNITS

DSS

DGR

GS

D
D

DM

D

, T

J

STG

L

pkg

100 V
100 V
±20 V

5.5

3.5

Figure 4

2.5
20

-55 to 150

300
260

A
A

W

mW/oC

o

C

o

C

o

C

• UIS Rating Curve

This product has be en desi gned t o mee t t he ex tre me test con diti ons a nd e nviro nment dema nded by the autom otive indu str y. Fo r a copy

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corpo ration HUFA75631SK8 Rev. B

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

HUFA75631SK8

Electrical Specifications

TA = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to
Ambient

SWITCHING SPECIFICATIONS

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

VDS = 95V, VGS = 0V - - 1 µA
V

GSS

GS(TH)VGS

DS(ON)ID

R

θJA

VGS = ±20V - - ±100 nA

Pad Area = 0.76 in2 (490.3 mm2) (Note 2)
(Figures 20, 21)

Pad Area = 0.054 in
(Figures 20, 21)

Pad Area = 0.0115 in
(Figures 20, 21)

ON

VDD = 50V, ID = 5.5A
V

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(10)

g(TH)

ISS

OSS

RSS

(Figures 18, 19)

r

f

VGS = 0V to 10V - 35 43 nC
VGS = 0V to 2V - 2.4 2.9 nC

gs

gd

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)

= 250µA, VGS = 0V (Figure 11) 100 - - V

= 90V, VGS = 0V, TA = 150oC - - 250 µA

DS

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 5.5A, VGS = 10V (Figure 9) - 0.033 0.039 Ω

--50oC/W

2

(34.8 mm2) (Note 3)

2

(7.42 mm2)(Note 4)

- - 152

- - 189

o

o

- - 50 ns

= 10V, RGS = 6.8Ω

GS

-11-ns

-23-ns

-39-ns

-31-ns

- - 105 ns

= 0V to 20V VDD = 50V, ID = 5.5A,

= 1.0mA

I

g(REF)

-6679nC

(Figures 13, 16, 17)

-4.75- nC

-12-nC

- 1225 - pF

- 330 - pF

- 105 - pF

C/W

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Reverse Recovery Time t
Reverse Recovered Charge Q

©2001 Fairchild Semiconductor Corpo ration HUFA75631SK8 Rev. B

RR

ISD = 5.5 A - - 1.25 V
I

= 2.5 A - - 1.00 V

SD

ISD = 5.5 A, dISD/dt = 100A/µs--96ns

rr

ISD = 5.5 A, dISD/dt = 100A/µs - - 310 nC

Typical Performance Curves

0

HUFA75631SK8

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 15

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

1

0.05

0.02

0.01

0.1

, NORMALIZED

θJA

Z

0.01

THERMAL IMPEDANCE

SINGLE PULSE

0.001

-5

10

-4

10

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

6

V

GS

= 10V, R

θ

JA

= 50oC/W

5

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

25

50 75 100 125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

R

= 50oC/W

θJA

P

DM

t

1

t

x R

2

+ T

θJA

A

2

10

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

1/t2

θJA

150

3

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

500

100

10

, PEAK CURRENT (A)

TRANSCONDUCTANCE

DM

I

MAY LIMIT CURRENT
IN THIS REGION

1

-5

10

VGS = 10V

-4

10

R

= 50oC/W

θ

JA

-3

10

-2

10

-1

10

0

10

t, PULSE WIDTH (s)

TA = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

25

1

10

150 - T

10

125

2

A

10

FIGURE 4. PEAK CURRENT CAPABILITY

©2001 Fairchild Semiconductor Corpo ration HUFA75631SK8 Rev. B

3

0

0

6

4

0

HUFA75631SK8

Typical Performance Curves

200
100

10

OPERATION IN THIS
AREA MAY BE

1

, DRAIN CURRENT (A)

D

LIMITED BY r

I

0.1
1

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

SINGLE PULSE
TJ = MAX RATED

= 25oC

T

A

10 20

(Continued)

R

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

50

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 15V

V

DD

40

θJA

= 50oC/W

100µs

1ms

10ms

100

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

10

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

50

40

VGS = 20V

= 10V

V

GS

VGS = 7V
V

= 6V

GS

30

20

20

DRAIN CURRENT (A)

D,

I

10

0

2345

TJ = 150oC

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = -55oC

30

20

, DRAIN CURRENT (A)

D

I

10

0

0123

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

T

FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SA TURATION CHARACTERISTICS

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 16

TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 5.5A

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS =5V

= 25oC

A

VGS = VDS, ID = 250µA

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

©2001 Fairchild Semiconductor Corpo ration HUFA75631SK8 Rev. B

FIGURE 10. NORMALIZED GA TE THRESHOLD VOLTA GE vs

JUNCTION TEMPERATURE