Fairchild Semiconductor HUFA75542S3S, HUFA75542P3 Datasheet

)

Data Sheet December 2001

75A, 80V, 0.014 Ohm, N-Channel,
UltraFET® Power MOSFETs

Packaging

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN (FLANGE)

HUFA75542P3

HUFA75542S3S

Symbol

D

G

S

DRAIN

(FLANGE

HUFA75542P3, HUFA75542S3S

Features

• Ultra Low On-Resistance

-r

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Cu rrent vs Pulse Width Curve

• UIS Rating Curve

Ordering Information

PART NUMBER PACKAGE BRAND

HUFA75542P3 TO-220AB 75542P
HUFA75542S3S TO-263AB 75542S

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75542S3ST.

DS(ON)

= 0.014Ω, V

GS

= 10V

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T

Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTE:

= 25oC to 150oC.

1. T

J

CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has be en desi gned t o mee t t he ex tre me test con diti ons a nd e nviro nment dema nded by the autom otive indu str y. Fo r a copy

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

C

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 25oC, Unless Otherwise Specified

HUFA75542P3, HUFA75542S3S UNITS

DSS

DGR

GS

D
D

DM

D

, T

J

STG

L

pkg

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

80 V
80 V

±20 V

75
58

Figure 4

230

1.54

-55 to 175

300
260

A
A

W

W/oC

o

C

o

C

o

C

©2001 Fairchild Semiconductor Corpo ration HUFA75542P3, HUFA75542S3S Rev. B

HUFA75542P3, HUFA75542S3S

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

Ambient
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

DSSID

DSS

VDS = 75V, VGS = 0V - - 1 µA
V

GSS

GS(TH)VGS

DS(ON)ID

θJC

R

θJA

ON

VGS = ±20V - - ±100 nA

TO-220 and TO-263 - - 0.65oC/W

VDD = 40V, ID = 75A
V

d(ON)

d(OFF)

OFF

r

f

R
(Figures 18, 19)

= 250µA, VGS = 0V (Figure 11) 80 - - V

= 70V, VGS = 0V, TC = 150oC - - 250 µA

DS

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 75A, VGS = 10V (Figure 9) - 0.012 0.014 Ω

--62oC/W

- - 195 ns

= 10V,

GS
GS

= 3.9Ω

- 12.5 - ns

- 117 - ns

-50-ns

- 80 - ns

- - 195 ns

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q

g(TOT)VGS

g(10)

g(TH)

Gate to Source Gate Charge Q
Gate to Drain "Miller" Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ISS

OSS

RSS

Source to Drain Diode Specifications

PARAMETER SYMBOL TE ST CONDIT IONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

SD

RR

= 0V to 20V VDD = 40V,

= 75A,

I

VGS = 0V to 10V - 80 96 nC
VGS = 0V to 2V - 5.7 7 nC

gs

gd

D

= 1.0mA

I

g(REF)

(Figures 13, 16, 17)

VDS = 25V, VGS = 0V,

- 150 180 nC

-15-nC

-33-nC

- 2750 - pF
f = 1MHz
(Figure 12)

- 700 - pF

- 250 - pF

ISD = 75A - - 1.25 V
I

= 37.5A - - 1.00 V

SD

rr

ISD = 75A, dISD/dt = 100A/µs - - 102 ns
ISD = 75A, dISD/dt = 100A/µs - - 255 nC

©2001 Fairchild Semiconductor Corpo ration HUFA75542P3, HUFA75542S3S Rev. B

Typical Performance Curves

5

5

HUFA75542P3, HUFA75542S3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 17

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

80

V

= 10V

GS

60

40

, DRAIN CURRENT (A)

20

D

I

0

25 50 75 100 125 150 17

TC, CASE TEMPERA TURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

, PEAK CURRENT (A)
I

, NORMALIZED
Z

DM

0.1

θJC

THERMAL IMPEDANCE

0.01

-5

10

1000

100

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

50

-5

10

SINGLE PULSE

DUTY FACTOR: D = t
PEAK TJ = PDM x Z

NOTES:

-4

10

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

VGS = 10V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

θJC

1/t2

x R

+ T

C

θJC

TC = 25oC

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

P

DM

0

10

o

C DERATE PEAK

175 - T

25

0

10

t

150

1

t

2

1

10

C

1

10

FIGURE 4. PEAK CURRENT CAPABILITY

©2001 Fairchild Semiconductor Corpo ration HUFA75542P3, HUFA75542S3S Rev. B