Fairchild Semiconductor HUFA75433S3ST Datasheet

HUFA75433S3S

N-Channel UltraFET® MOSFETs 60V, 64A, 16mΩ

HUFA75433S3S

March 2002

General Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET cess technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as

®

process. This advanced pro-

Applications

• Motor and Load Control

• Powertrain Management

Features

• 175°C Maximum Junction Temperature

• UIS Capability (Single Pulse and Repetitive Pulse)

• Ultra-Low On-Resistance r

= 0.016Ω, VGS = 10V

DS(ON)

switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

D

G

S

TO-263AB

FDB Series

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 60 V Gate to Source Voltage ±20 V Drain Current

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 125oC, VGS = 10V, R

C

= 43oC/W) 5 A

θJA

64 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 250 mJ Power dissipation 150 W

o

Derate above 25

C1W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

Thermal Resistance Junction to Case TO-263 1 Thermal Resistance Junction to Ambient TO-263 62 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

o

C/W

o

C/W

o

C/W

Rev. A

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

75433S3 HUFA75433S3ST TO-263 330mm 24mm 800 units 75433S3 HUFA75433S3S TO-263 Tube N/A 50 units

HUFA75433S3S

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V

= 55V, VGS = 0V - - 1

V

Zero Gate Voltage Drain Current

V V

DS DS

GS

= 45V = 0V

= 150oC - - 250

T

C

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

= 64A, VGS = 10V - 0.013 0.016

Drain to Source On Resistance

D

= 64A, VGS = 10V,

I

D

= 175oC

T

J

- 0.029 0.035

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

Q

g(TOT)

Q

g(10)

Q

g(TH)

Q

gs

Q

gd

Input Capacitance Output Capacitance - 540 - pF Reverse Transfer Capacitance - 150 - pF

V

= 25V, VGS = 0V,

DS

f = 1MHz

Total Gate Charge at 20V VGS = 0V to 20V Total Gate Charge at 10V VGS = 0V to 10V - 50 65 nC Threshold Gate Charge VGS = 0V to 2V - 3 3.9 nC Gate to Source Gate Charge - 6 - nC

V

DD

= 64A

I

D

I

= 1.0mA

g

= 30V

- 1550 - pF

90 117 nC

Gate to Drain “Miller” Charge - 20 - nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Ti me Turn-On Delay Time - 11 - ns Rise Time - 9 2 - ns Turn-Off Delay Time - 39 - ns Fall Time - 26 - ns Turn-Off Time - - 9 8 ns

(VGS = 10V)

V

= 30V, ID = 64A

DD

= 10V, RGS = 6.2Ω

V

GS

- - 155 ns

Drain-Source Diode Characteristics

I

= 64A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting T

Source to Drain Diode Voltage Reverse Recovery Time ISD = 64A, dISD/dt = 100A/µs- - 37 ns

Reverse Recovered Charge ISD = 64A, dISD/dt = 100A/µs- - 42 nC

= 25°C, L = 200µH, IAS = 50A

J

SD

= 32A - - 1.0 V

I

SD

HUFA75433S3S

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DI SS I PA T I O N MU LTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

70

60

50

40

30

, DRAIN CURRENT (A)

20

D

I

10

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Contin uous Drain Current vs

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

θJC

1/t2

10

x R

0

θJC

t

1

+ T

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

800

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

VGS = 20V

, PEAK CURRENT (A)

DM

I

100

50

VGS = 10V

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDT H (s)

TC = 25oC

FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

HUFA75433S3S

Typical Characteristics T

1000

100

OPERATION IN THIS

10

, DRAIN CURRENT (A)

D

I

1

AREA MAY BE

LIMITED BY r

SINGLE PULSE TJ = MAX RATED

= 25oC

T

C

110100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

C

1000

100µs

1ms

10ms

100

10

, AVALANCHE CURRENT (A)

AS

I

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

STARTING TJ = 150oC

1

0.001 0.01 0.1 1

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515.

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching

Capability

100

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

75

100

75

VGS = 20V

VGS = 10V

10

VGS = 6V

50

TJ = 175oC

, DRAIN CURRENT (A) I

TJ = 25oC

D

25

TJ = -55oC

0

3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS, GATE TO SOURCE VOLTAGE (V)

50

, DRAIN CURRENT (A)

D

I

25

0

0 0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

TC = 25oC

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

2.5

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 64A

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V

VGS = VDS, ID = 250µA

Figure 9. Normalized Drain to Source On

Resistance vs Junction Temperature

Figure 10. Normalized Gate Thresho ld Voltage vs

Junction Temperature