Fairchild Semiconductor HUFA75433S3ST Datasheet

HUFA75433S3S

N-Channel UltraFET® MOSFETs
60V, 64A, 16mΩ

HUFA75433S3S

March 2002

General Description

These N-Channel power MOSFETs are manufactured us­ing the innovative UltraFET
cess technology achieves very low on-resistance per
silicon area, resulting in outstanding performance. This de­vice is capable of withstanding high energy in the ava­lanche mode and the diode exhibits very low reverse
recovery time and stored charge. It was designed for use in
applications where power efficiency is important, such as

®

process. This advanced pro-

Applications

• Motor and Load Control

• Powertrain Management

Features

• 175°C Maximum Junction Temperature

• UIS Capability (Single Pulse and Repetitive Pulse)

• Ultra-Low On-Resistance r

= 0.016Ω, VGS = 10V

DS(ON)

switching regulators, switching convertors, motor drivers,
relay drivers, low-voltage bus switches, and power man­agement in portable and battery-operated products.

D

G

S

TO-263AB

FDB Series

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current

I

D

Continuous (T
Continuous (T

= 25oC, VGS = 10V)

C

= 125oC, VGS = 10V, R

C

= 43oC/W) 5 A

θJA

64 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 250 mJ
Power dissipation 150 W

o

Derate above 25

C1W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.

©2002 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case TO-263 1
Thermal Resistance Junction to Ambient TO-263 62
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

o

C/W

o

C/W

o

C/W

Rev. A

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

75433S3 HUFA75433S3ST TO-263 330mm 24mm 800 units
75433S3 HUFA75433S3S TO-263 Tube N/A 50 units

HUFA75433S3S

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V

= 55V, VGS = 0V - - 1

V

Zero Gate Voltage Drain Current

V
V

DS
DS

GS

= 45V
= 0V

= 150oC - - 250

T

C

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

= 64A, VGS = 10V - 0.013 0.016

Drain to Source On Resistance

D

= 64A, VGS = 10V,

I

D

= 175oC

T

J

- 0.029 0.035

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

Q

g(TOT)

Q

g(10)

Q

g(TH)

Q

gs

Q

gd

Input Capacitance
Output Capacitance - 540 - pF
Reverse Transfer Capacitance - 150 - pF

V

= 25V, VGS = 0V,

DS

f = 1MHz

Total Gate Charge at 20V VGS = 0V to 20V
Total Gate Charge at 10V VGS = 0V to 10V - 50 65 nC
Threshold Gate Charge VGS = 0V to 2V - 3 3.9 nC
Gate to Source Gate Charge - 6 - nC

V

DD

= 64A

I

D

I

= 1.0mA

g

= 30V

- 1550 - pF

90 117 nC

Gate to Drain “Miller” Charge - 20 - nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Ti me
Turn-On Delay Time - 11 - ns
Rise Time - 9 2 - ns
Turn-Off Delay Time - 39 - ns
Fall Time - 26 - ns
Turn-Off Time - - 9 8 ns

(VGS = 10V)

V

= 30V, ID = 64A

DD

= 10V, RGS = 6.2Ω

V

GS

- - 155 ns

Drain-Source Diode Characteristics

I

= 64A - - 1.25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting T

©2002 Fairchild Semiconductor Corporation Rev. A

Source to Drain Diode Voltage
Reverse Recovery Time ISD = 64A, dISD/dt = 100A/µs- - 37 ns

Reverse Recovered Charge ISD = 64A, dISD/dt = 100A/µs- - 42 nC

= 25°C, L = 200µH, IAS = 50A

J

SD

= 32A - - 1.0 V

I

SD

HUFA75433S3S

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DI SS I PA T I O N MU LTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

70

60

50

40

30

, DRAIN CURRENT (A)

20

D

I

10

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Contin uous Drain Current vs

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

θJC

1/t2

10

x R

0

θJC

t

1

+ T

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

800

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 20V

, PEAK CURRENT (A)

DM

I

100

50

VGS = 10V

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDT H (s)

TC = 25oC

FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation Rev. A

HUFA75433S3S

Typical Characteristics T

1000

100

OPERATION IN THIS

10

, DRAIN CURRENT (A)

D

I

1

AREA MAY BE

LIMITED BY r

SINGLE PULSE
TJ = MAX RATED

= 25oC

T

C

110100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

C

1000

100µs

1ms

10ms

100

10

, AVALANCHE CURRENT (A)

AS

I

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

STARTING TJ = 150oC

1

0.001 0.01 0.1 1

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515.

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching

Capability

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

75

100

75

VGS = 20V

VGS = 10V

10

VGS = 6V

50

TJ = 175oC

, DRAIN CURRENT (A)
I

TJ = 25oC

D

25

TJ = -55oC

0

3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, GATE TO SOURCE VOLTAGE (V)

50

, DRAIN CURRENT (A)

D

I

25

0

0 0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

TC = 25oC

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 64A

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V

VGS = VDS, ID = 250µA

Figure 9. Normalized Drain to Source On

Resistance vs Junction Temperature

©2002 Fairchild Semiconductor Corporation Rev. A

Figure 10. Normalized Gate Thresho ld Voltage vs

Junction Temperature