Fairchild Semiconductor HUFA75345G3, HUFA75345P3, HUFA75345S3S Datasheet

HUFA75345G3, HUFA75345P3, HUFA75345S3S

Data Sheet June 2003

75A, 55V, 0.007 Ohm, N-Channel UltraFET
Power MOSFETs

These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This

advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA75345.

Ordering Information

PART NUMBER PACKAGE BRAND

HUFA75345G3 TO-247 75345G

HUFA75345P3 TO-220AB 75345P

HUFA75345S3S TO-263AB 75345S

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75345S3ST.

Features

• 75A, 55V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Models

- Thermal Impedance SPICE and SABER Models
Available on the WEB at: www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN
(TAB)

JEDEC TO-263AB

GATE

SOURCE

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

(FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

DRAIN

GATE

©2003 Fairchild Semiconductor Corporation HUFA75345G3, HUFA75345P3, HUFA75345S3S Rev. B1

HUFA75345G3, HUFA75345P3, HUFA75345S3S

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

= 25oC to 150oC.

1. T

J

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

= 25oC, Unless Otherwise Specified

C

UNITS

DSS

DGR

GS

D

DM

AS

D

, T

J

STG

L

pkg

55 V

55 V

±20 V

75

Figure 4

Figure 6

325

2.17

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V

Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (V

GS

= 10V)

Turn-On Time t

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q

Gate Charge at 10V Q

Threshold Gate Charge Q

Gate to Source Gate Charge Q

Gate to Drain “Miller” Charge Q

DSSID

DSS

VDS = 50V, VGS = 0V - - 1 µA

V

GSS

GS(TH)VGS

DS(ON)ID

θJC

θJA

VGS = ±20V - - ±100 nA

(Figure 3) - - 0.46

TO-247 - - 30

TO-220, TO-263 - - 62

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(10)

g(TH)

VDD = 30V, ID ≅ 75A,
R
R

r

f

VGS = 0V to 10V - 125 165 nC

VGS = 0V to 2V - 6.8 10 nC

gs

gd

= 250µA, VGS = 0V (Figure 11) 55 - - V

= 45V, VGS = 0V, TC = 150oC--250µA

DS

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 75A, VGS = 10V (Figure 9) - 0.006 0.007 Ω

o

o

o

--145ns

= 0.4Ω, VGS = 10V,

L
GS

= 2.5Ω

-20- ns

-75- ns

-45- ns

-30- ns

--115ns

= 0V to 20V VDD = 30V,

I

≅ 75A,

D

R

= 0.4Ω

L

I

= 1.0mA

g(REF)

(Figure 13)

-220275nC

-14- nC

-58- nC

C/W

C/W

C/W

©2003 Fairchild Semiconductor Corporation HUFA75345G3, HUFA75345P3, HUFA75345S3S Rev. B1

HUFA75345G3, HUFA75345P3, HUFA75345S3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

CAPACITANCE SPECIFICATIONS

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t

Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

ISS

OSS

RSS

SD

rr

RR

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

-4000- pF

-1450- pF

-450- pF

ISD = 75A - - 1.25 V

ISD = 75A, dISD/dt = 100A/µs--110ns

ISD = 75A, dISD/dt = 100A/µs - - 225 nC

80

60

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125 175

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

40

, DRAIN CURRENT (A)

20

D

I

0

25

50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

NOTES:

10

DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

-1

10

1/t2

x R

θJC

0

10

θJC

t

2

+ T

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2003 Fairchild Semiconductor Corporation HUFA75345G3, HUFA75345P3, HUFA75345S3S Rev. B1