Fairchild Semiconductor HUFA75344G3, HUFA75344P3, HUFA75344S3S Datasheet

HUFA75344G3, HUFA75344P3, HUFA75344S3S,

HUFA75344S3

Data Sheet June 2003

75A, 55V, 0.008 Ohm, N-Channel UltraFET
Power MOSFETs

These N-Channel pow er MOSFETs
are manufactured using the
innovati ve Ul tra FET® proce ss . This

advanced process technolog y
achieves the lowest possible on-resistance per silicon ar ea,
resultin g in outstanding performance. This device is capab le
of withstanding hi gh energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in appli cations where power
efficiency is important, such as switching regulators,
switchi ng converters, motor drivers, relay drivers , low­voltage bus switches, and power manage me nt i n po rtab le
and battery-operated products.
Formerly developmental ty pe TA75344.

Ordering Information

PART NUMBER PACKAGE BRAND

HUFA75344G3 TO-247 75344G
HUFA75344P3 TO-220AB 75344P
HUFA75344S3S TO-263AB 75344S
HUFA75344S3 TO-262AA 75344S

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75344S3ST.

Features

• 75A, 55V

• Simulation Model s

- Temperature Compensated PSPICE® and SABER™
Models

- Thermal Impedance PSPICE and SABER Models
Av ailable on the web at: www.Fairchild.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

SOURCE

DRAIN

GATE

DRAIN
(TAB)

TO-247

DRAIN

(FLANGE)

GATE

SOURCE

TO-263AB

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil. com/

All Fa irchild semiconductor products are manufactured, assembled a nd tested under ISO9000 and QS9000 qualit y systems certification.

Reliability data can be found at: http:/ /www.mtp.fairchild.com/aut omoti ve.html.

DRAIN

(FLANGE)

DRAIN

(FLANGE)

TO-220AB

SOURCE

TO-262AA

DRAIN

GATE

SOURCE

DRAIN

GATE

©2003 Fairchild Semiconductor Corporation HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Rev. B1

HUFA75344G3, HUFA75344P3, HUFA75344S3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

55 V
55 V

±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

D

DM

AS

D

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Rati ngs” may cause permane nt damage to the device. This is a stress only rating and oper ation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

75

Figure 4

Figure 6

285

1.90

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

= 25oC to 150oC.

1. T

J

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain t o Source Breakdown Voltage BV
Zero Gat e V ol tag e D rain Curre nt I

Gate to Sour c e Le ak ag e C urr e nt I

DSSID

DSS

GSS

= 250µA, VGS = 0V (Figure 11) 55 - - V

VDS = 50V, VGS = 0V - - 1 µA

= 45V, VGS = 0V, TC = 150oC--250µA

V

DS

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 75A, VGS = 10V (Figure 9) - 0.006 5 0.008 Ω

THERMAL SPECIFICATIONS

Thermal R esis ta nc e Ju ncti on to Case R
Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

θJC
θJA

ON

r

f

OFF

(Figure 3) - - 0.52
TO-247 - - 30
TO-220, TO-263, TO-262 - - 62

VDD = 30V, ID ≅ 75A,
R

= 0.4Ω, VGS = 10V,

L

R

= 3.0Ω

GS

--195ns

-16- ns

-112- ns

-37- ns

-28- ns

--100ns

o

C/W

o

C/W

o

C/W

GATE CHARGE SPECIFICATIONS

Total Gate Charg e Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gat e Ch arg e Q
Gate to Source Gate Charg e Q
Reverse Transfer Capacitance Q

g(10)

g(TH)

gs
gd

= 0V to 20V VDD = 30V,

I

≅ 75A,

VGS = 0V to 10V - 9 0 10 8 nC
VGS = 0V to 2V - 5.9 7.0 nC

D

R

= 0.4Ω

L

I

g(REF)

= 1.0mA

(Figure 13)

-175210nC

-14-nC

-39-nC

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ISS
OSS
RSS

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

-3200- pF

-1170- pF

-310- pF

©2003 Fairchild Semiconductor Corporation HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Rev. B1

HUFA75344G3, HUFA75344P3, HUFA75344S3S

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Vol tage V
Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

SD

rr

RR

ISD = 75A - - 1.25 V
ISD = 75A, dISD/dt = 100A/µs--105ns
ISD = 75A, dISD/dt = 100A/µs - - 210 nC

80

60

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125 175

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

40

20

, DRAIN CURRENT (A)

D

I

0

25

50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

1/t2

x R

θJC

θJC

0

10

t

2

+ T

C

1

10

©2003 Fairchild Semiconductor Corporation HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Rev. B1