Fairchild Semiconductor HUF75645P3, HUF75645S3S Datasheet

)

Data Sheet December 2001

75A, 100V, 0.014 Ohm, N-Channel, UltraFET® Power MOSFETs

Packaging

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE SOURCE

DRAIN

(FLANGE)

HUF75645P3

HUF75645S3S

DRAIN

(FLANGE

HUF75645P3, HUF75645S3S

Features

• Ultra Low On-Resistance

-r

DS(ON)

= 0.014Ω,

• Simulation Models

- Temperature Compensated PSPICE® and SABER™ Electrical Models

- Spice and Saber Thermal Impedance Mode ls

- www.fairchildsemi.com

• Peak Cu rrent vs Pulse Width Curve

= 10V

Symbol

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T

Continuous (TC= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

= 25oC to 150oC.

1. T

CAUTION: Stresses above those listed in “Absol24ute Maximum Ratin gs” may cause p ermanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 25oC, Unless Otherwise Specified

• UIS Rating Curve

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75645P3 TO-220AB 75645P HUF75645S3S TO-263AB 75645S

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75645S3ST.

HUF75645P3, HUF75645S3S UNITS

DSS

DGR

D D

, T

STG

pkg

100 V 100 V ±20 V

75 65

Figure 4

310

2.07

-55 to 175

300 260

A A

W/oC

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

For severe environments, see our Automotive HUFA series.

HUF75645P3, HUF75645S3S

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R Thermal Resistance Junction to

Ambient SWITCHING SPECIFICATIONS (V

= 10V) Turn-On Time t Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Turn-Off Time t

GATE CHARGE SPECIFICATIONS

DSSID

DSS

VDS = 95V, VGS = 0V - - 1 µA V

GSS

GS(TH)VGS

DS(ON)ID

θJC

θJA

d(ON)

VGS = ±20V - - ±100 nA

TO-220 and TO-263 - - 0.48oC/W

VDD = 50V, ID = 75A V R (Figures 18, 19)

d(OFF)

OFF

= 250µA, VGS = 0V (Figure 11) 100 - - V

= 90V, VGS = 0V, TC = 150oC - - 250 µA

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 75A, VGS = 10V (Figure 9) - 0.0115 0.014 Ω

--62oC/W

- - 197 ns

= 10V,

GS GS

= 2.5Ω

-14-ns

- 117 - ns

-41-ns

- 97 - ns

- - 207 ns

Total Gate Charge Q Gate Charge at 10V Q Threshold Gate Charge Q

g(TOT)VGS

g(10)

g(TH)

Gate to Source Gate Charge Q Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

ISS

OSS

RSS

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t Reverse Recovered Charge Q

= 0V to 20V VDD = 50V,

= 75A,

VGS = 0V to 10V - 106 127 nC VGS = 0V to 2V - 6.8 8.2 nC

= 1.0mA

g(REF)

(Figures 13, 16, 17)

VDS = 25V, VGS = 0V,

- 198 238 nC

-14-nC

-41-nC

- 3790 - pF f = 1MHz (Figure 12)

- 810 - pF

- 230 - pF

ISD = 75A - - 1.25 V I

= 35A - - 1.00 V

ISD = 75A, dISD/dt = 100A/µs - - 145 ns ISD = 75A, dISD/dt = 100A/µs - - 360 nC

Typical Performance Curves

HUF75645P3, HUF75645S3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0 25 50 75 100 17

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATI ON vs CASE

TEMPERATURE

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

-4

-3

t, RECTANGULAR PULSE DURATION (s)

, DRAIN CURRENT (A)

50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

-1

θJC

1/t2

x R

θJC

+ T

= 10V

175

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

2000

1000

, PEAK CURRENT (A)

100

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

-5

VGS = 10V

-4

-3

-2

-1

t, PULSE WIDTH (s)

TC = 25oC FOR TEMPERATURES ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

150

FIGURE 4. PEAK CURRENT CAPABILITY

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