Fairchild Semiconductor HUF75639S3 Datasheet

Data Sheet December 2001

56A, 115V, 0.025 Ohm, N-Channel
UltraFET Power MOSFET

This N-Channel power MOSFETs is manufactured using the
innovative UltraFET® process. This advanced process
technology achieves the lowest possible on-resistance per
silicon area, resul ting in outstanding performance. This
device is capable of withstanding high energy in the
avala nc he mod e and the dio de exhibits very low rev erse
recovery time and stored charge. It was designed for use in
applications where power efficiency is important, such as
switching regu la tors, switching converters, motor drivers,
relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.

Formerly developmental type TA75639.‘

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75639S3R4851 TO-262AA R4851

NOTE: When ordering, use the entire part number.

Symbol

D

G

HUF75639S3R4851

Features

• 56A, 115V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- Spice and Saber Thermal Impedance M ode ls

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Packaging

JEDEC TO-262AA

SOURCE

DRAIN

GATE

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

= 25oC to 150oC.

1. T

J

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

GS

S

TC = 25oC, Unless Otherwise Specified

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

, T

J

For severe environments, see our Automotive HUFA series.

DSS

DGR

GS

DM

AS

STG

pkg

HUF75639S3R4851 UNITS

115 V
115 V
±20 V

D

D

L

56

Figure 4

Figures 6, 14, 15

200

1.35

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

©2001 Fairchild Semiconductor Corpo ration HUF75639S3R4851 Rev. B

HUF75639S3R4851

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

DSSID

DSS

VDS = 95V, VGS = 0V - - 1 µA
V

GSS

GS(TH)VGS

DS(ON)ID

θJC

θJA

ON

VGS = ±20V - - ±100 nA

(Figure 3) - - 0.74
TO-262 - - 62

VDD = 50V, ID ≅ 56A,
R

d(ON)

d(OFF)

OFF

R

r

f

= 250µA, VGS = 0V (Figure 11) 115 - - V

= 90V, VGS = 0V, TC = 150oC--250µA

DS

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 56A, VGS = 10V (Figure 9) - 0.021 0.025 Ω

o

o

--110ns

= 0.89Ω, VGS = 10V,

L
GS

= 5.1Ω

-15- ns

-60- ns

-20- ns

-25- ns

- - 70 ns

C/W
C/W

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Reverse Transfer Capacitance Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

g(TOT)VGS

g(10)

g(TH)

ISS

VGS = 0V to 10V - 57 75 nC
VGS = 0V to 2V - 3.7 4.5 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz

SD

rr

RR

(Figure 12)

ISD = 56A - - 1.25 V
ISD = 56A, dISD/dt = 100A/µs - - 110 ns
ISD = 56A, dISD/dt = 100A/µs - - 320 nC

OSS

RSS

= 0V to 20V VDD = 50V,

I

≅ 56A,

D

= 0.89Ω

R

L

I

= 1.0mA

g(REF)

(Figure 13)

- 110 130 nC

-9.8- nC

-24-nC

- 2000 - pF

- 500 - pF

-65-pF

©2001 Fairchild Semiconductor Corpo ration HUF75639S3R4851 Rev. B

Typical Performance Curves

1

HUF75639S3R4851

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125 175

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150 175

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

10

-1

10

10

θJC

1/t2

0

x R

θJC

t

1

t

2

+ T

C

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

, PEAK CURRENT (A)
I

DM

1000

100

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

10

-5

10

VGS = 10V

10

TC = 25oC

-4

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

0

10

C

150

1

10

FIGURE 4. PEAK CURRENT CAPAB ILITY

©2001 Fairchild Semiconductor Corpo ration HUF75639S3R4851 Rev. B