Fairchild Semiconductor HUF75631S3S Datasheet

©2001 Fairchild Semiconductor Corpo ration HUF75631P3, HUF75631S3ST Rev. B

HUF75631P3, HUF75631S3ST

33A, 100V, 0.040 Ohm, N-Channel,
UltraFET® Power MOSFETs

Packaging

Symbol

Features

• Ultra Low On-Resistance

-r

DS(ON)

= 0.040Ω, V

GS

= 10V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

HUF75631P3

JEDEC TO-220AB JEDEC TO-263AB

HUF75631S3ST

GATE

SOURCE

DRAIN

(FLANGE)

D

G

S

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75631P3 TO-220AB 75631P
HUF75631S3ST TO-263AB 75631S

NOTE: When ordering, use the entire part number, e.g.,
HUF75631S3ST.

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

HUF75631P3

HUF75631S3ST UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

100 V

Drain to Gate Voltage (R

GS

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

100 V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

GS

±20 V

Drain Current

Continuous (T

C

= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

DM

33
23

Figure 4

A
A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15

Power Dissipation 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

120

0.80

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

J

, T

STG

-55 to 175

o

C

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

L

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

pkg

300
260

o

C

o

C

NOTE:

1. T

J

= 25oC to 150oC.

CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet December 2001

©2001 Fairchild Semiconductor Corporati on HUF75631P3, HUF75631S3ST Rev. B

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V (Figure 11) 100 - - V

Zero Gate Voltage Drain Current I

DSS

VDS = 95V, VGS = 0V - - 1 µA
V

DS

= 90V, VGS = 0V, TC = 150oC - - 250 µA

Gate to Source Leakage Current I

GSS

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V

GS(TH)VGS

= VDS, ID = 250µA (Figure 10) 2 - 4 V

Drain to Source On Resistance r

DS(ON)ID

= 33A, VGS = 10V (Figure 9) - 0.033 0.040 Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R

θJC

TO-220, TO-263 - - 1.25oC/W

Thermal Resistance Junction to
Ambient

R

θJA

--62oC/W

SWITCHING SPECIFICATIONS (V

GS

= 10V)

Turn-On Time t

ON

VDD = 50V, ID = 33A
V

GS

= 10V,

R

GS

= 9.1Ω

(Figures 18, 19)

- - 100 ns

Turn-On Delay Time t

d(ON)

-9.5-ns

Rise Time t

r

-57-ns

Turn-Off Delay Time t

d(OFF)

-40-ns

Fall Time t

f

- 55 - ns

Turn-Off Time t

OFF

- - 145 ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q

g(TOT)VGS

= 0V to 20V VDD = 50V,

I

D

= 33A,

I

g(REF)

= 1.0mA

(Figures 13, 16, 17)

-6679nC

Gate Charge at 10V Q

g(10)

VGS = 0V to 10V - 35 42 nC

Threshold Gate Charge Q

g(TH)

VGS = 0V to 2V - 2.4 2.9 nC

Gate to Source Gate Charge Q

gs

-5.4-nC

Gate to Drain “Miller” Charge Q

gd

-13-nC

CAPACITANCE SPECIFICATIONS

Input Capacitance C

ISS

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

- 1220 - pF

Output Capacitance C

OSS

- 295 - pF

Reverse Transfer Capacitance C

RSS

- 100 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS M IN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

ISD = 33A - - 1.25 V
I

SD

= 17A - - 1.00 V

Reverse Recovery Time t

rr

ISD = 33A, dISD/dt = 100A/µs - - 112 ns

Reverse Recovered Charge Q

RR

ISD = 33A, dISD/dt = 100A/µs - - 400 nC

HUF75631P3, HUF75631S3ST

©2001 Fairchild Semiconductor Corporati on HUF75631P3, HUF75631S3ST Rev. B

Typical Performance Curves

FIGURE 1. NORMALIZED POWER DISSIP A TI ON vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

FIGURE 4. PEAK CURRENT CAPA BILITY

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 17

5

0.2

0.4

0.6

0.8

1.0

1.2

125

150

20

30

40

50 75 100 125 150

0

25

I

D

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

V

GS

= 10V

17

5

10

0.1

1

2

10

-4

10

-3

10

-2

10

-1

10

0

10

1

0.01
10

-5

t, RECTANGULAR PULSE DURATION (s)

Z

θJC

, NORMALIZED

THERMAL IMPEDANCE

SINGLE PULSE

NOTES:
DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJC

x R

θJC

+ T

C

P

DM

t

1

t

2

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.01

0.02

100

600

20

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-5

I

DM

, PEAK CURRENT (A)

t, PULSE WIDTH (s)

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

TC = 25oC

I = I

25

175 - T

C

150

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

VGS = 10V

HUF75631P3, HUF75631S3ST