Fairchild Semiconductor HUF75623S3S Datasheet

©2001 Fairchild Semiconductor Corporati on HUF75623P3, HUF75623S3ST Rev. B

HUF75623P3, HUF75623S3ST

22A, 100V, 0.064 Ohm, N-Channel,
UltraFET® Power MOSFETs

Packaging

Symbol

Features

• Ultra Low On-Resistance

-r

DS(ON)

= 0.064Ω, V

GS

= 10V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

HUF75623P3

JEDEC TO-220AB JEDEC TO-263AB

HUF75623S3ST

GATE

SOURCE

DRAIN

(FLANGE

)

D

G

S

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75623P3 TO-220AB 75623P
HUF75623S3ST TO-263AB 75623S

NOTE: When ordering, use the entire part number i.e., HUF75623P3

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

HUF75623P3, HUF75623S3ST UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

100 V

Drain to Gate Voltage (R

GS

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

100 V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

±20 V

Drain Current

Continuous (T

C

= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

DM

22
15

Figure 4

A
A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

85

0.57

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

J

, T

STG

-55 to 175

o

C

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

L

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

pkg

300
260

o

C

o

C

NOTE:

1. T

J

= 25oC to 150oC.

CAUTION: Stresses above those listed in “ Absolute Maxi mum Ratings” may cause perman ent damage to th e device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet December 2001

©2001 Fairchild Semiconductor Corporati on HUF75623P3, HUF75623S3ST Rev. B

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V (Figure 11) 100 - - V

Zero Gate Voltage Drain Current I

DSS

VDS = 95V, VGS = 0V - - 1 µA
V

DS

= 90V, VGS = 0V, TC = 150oC - - 250 µA

Gate to Source Leakage Current I

GSS

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V

GS(TH)VGS

= VDS, ID = 250µA (Figure 10) 2 - 4 V

Drain to Source On Resistance r

DS(ON)ID

= 22A, VGS = 10V (Figure 9) - 0.054 0.064 Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R

θJC

TO-220 - - 1.76oC/W

Thermal Resistance Junction to
Ambient

R

θJA

--62oC/W

SWITCHING SPECIFICATIONS (V

GS

= 10V)

Turn-On Time t

ON

VDD = 50V, ID = 22A
V

GS

= 10V,

R

GS

= 13Ω

(Figures 18, 19)

- - 75 ns

Turn-On Delay Time t

d(ON)

-7.9-ns

Rise Time t

r

-42-ns

Turn-Off Delay Time t

d(OFF)

-47-ns

Fall Time t

f

- 39 - ns

Turn-Off Time t

OFF

- - 130 ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q

g(TOT)VGS

= 0V to 20V VDD = 50V,

I

D

= 22A,

I

g(REF)

= 1.0mA

(Figures 13, 16, 17)

-4352nC

Gate Charge at 10V Q

g(10)

VGS = 0V to 10V - 23 28 nC

Threshold Gate Charge Q

g(TH)

VGS = 0V to 2V - 1.7 2 nC

Gate to Source Gate Charge Q

gs

-3.5-nC

Gate to Drain “Miller” Charge Q

gd

-8.7-nC

CAPACITANCE SPECIFICATIONS

Input Capacitance C

ISS

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

- 790 - pF

Output Capacitance C

OSS

- 215 - pF

Reverse Transfer Capacitance C

RSS

-70-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS M IN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

ISD = 22A - - 1.25 V
I

SD

= 11A - - 1.00 V

Reverse Recovery Time t

rr

ISD = 22A, dISD/dt = 100A/µs - - 100 ns

Reverse Recovered Charge Q

RR

ISD = 22A, dISD/dt = 100A/µs - - 313 nC

HUF75623P3, HUF75623S3ST

©2001 Fairchild Semiconductor Corporati on HUF75623P3, HUF75623S3ST Rev. B

Typical Performance Curves

FIGURE 1. NORMALIZED POWER DISSIPA TION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

FIGURE 4. PEAK CURRENT CAPABILITY

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 17

5

0.2

0.4

0.6

0.8

1.0

1.2

125 150

15

20

25

50 75 100 125 150

0

25

I

D

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

V

GS

= 10V

17

5

5

10

0.1

1

2

10

-4

10

-3

10

-2

10

-1

10

0

10

1

0.01
10

-5

t, RECTANGULAR PULSE DURATION (s)

Z

θJC

, NORMALIZED

THERMAL IMPEDANCE

SINGLE PULSE

NOTES:
DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJC

x R

θJC

+ T

C

P

DM

t

1

t

2

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.01

0.02

100

300

10

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-5

I

DM

, PEAK CURRENT (A)

t, PULSE WIDTH (s)

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

TC = 25oC

I = I

25

175 - T

C

150

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

VGS = 10V

HUF75623P3, HUF75623S3ST