Fairchild Semiconductor HUF75345S3 Datasheet

©2001 Fairchild Semiconductor Corporati on HUF75345G3, HUF75345P3, HUF75345S3S Rev. B

HUF75345G3, HUF75345P3, HUF75345S3S

75A, 55V, 0.007 Ohm, N-Channel UltraFET
Power MOSFETs

These N-Channel pow er MOSFETs
are manufactured using the
innovat ive Ul traFET® pr ocess. This

advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outsta ndi ng performance. This device i s c apa ble
of withstanding hi gh ene r gy in the a valanche mode and the
diode exhibits very low reverse recove ry time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA75345.

Features

• 75A, 55V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Models

- Thermal Impedance SPICE and SABER Models
Available on the WEB at: www.fairchildsemi.com

• Pea k Cu rrent vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

Packaging

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75345G3 TO-247 75345G
HUF75345P3 TO-220AB 75345P
HUF75345S3S TO-263AB 75345S

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75345S3ST.

D

G

S

JEDEC STYLE TO-247 JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN
(TAB)

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

Data Sheet December 2001

©2001 Fairchild Semiconductor Corporati on HUF75345G3, HUF75345P3, HUF75345S3S Rev. B

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

55 V

Drain to Gate Voltage (R

GS

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

55 V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

DM

75

Figure 4

A

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

AS

Figure 6

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

325

2.17

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

J

, T

STG

-55 to 175

o

C

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

L

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

pkg

300
260

o

C

o

C

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess onl y rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. T

J

= 25oC to 150oC.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V (Figure 11) 55 - - V

Zero Gate Voltage Drain Current I

DSS

VDS = 50V, VGS = 0V - - 1 µA
V

DS

= 45V, VGS = 0V, TC = 150oC--250µA

Gate to Source Leakage Current I

GSS

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V

GS(TH)VGS

= VDS, ID = 250µA (Figure 10) 2 - 4 V

Drain to Source On Resistance r

DS(ON)ID

= 75A, VGS = 10V (Figure 9) - 0.006 0.007 W

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R

θJC

(Figure 3) - - 0.46

o

C/W

Thermal Resistance Junction to Ambient R

θJA

TO-247 - - 30

o

C/W

TO-220, TO-263 - - 62

o

C/W

SWITCHING SPECIFICATIONS (V

GS

= 10V)

Turn-On Time t

ON

VDD = 30V, ID ≅ 75A,
R

L

= 0.4Ω, VGS = 10V,

R

GS

= 2.5Ω

--145ns

Turn-On Delay Time t

d(ON)

-20- ns

Rise Time t

r

-75- ns

Turn-Off Delay Time t

d(OFF)

-45- ns

Fall Time t

f

-30- ns

Turn-Off Time t

OFF

--115ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q

g(TOT)VGS

= 0V to 20V VDD = 30V,

I

D

≅ 75A,

R

L

= 0.4Ω

I

g(REF)

= 1.0mA

(Figure 13)

- 220 275 nC

Gate Charge at 10V Q

g(10)

VGS = 0V to 10V - 125 165 nC

Threshold Gate Charge Q

g(TH)

VGS = 0V to 2V - 6.8 10 nC

Gate to Source Gate Charge Q

gs

-14-nC

Gate to Drain “Miller” Charge Q

gd

-58-nC

HUF75345G3, HUF75345P3, HUF75345S3S

©2001 Fairchild Semiconductor Corporati on HUF75345G3, HUF75345P3, HUF75345S3S Rev. B

CAPACITANCE SPECIFICATIONS

Input Capacitance C

ISS

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

- 4000 - pF

Output Capacitance C

OSS

- 1450 - pF

Reverse Transfer Capacitance C

RSS

- 450 - pF

Electrical Specifications

TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

ISD = 75A - - 1.25 V

Reverse Recovery Time t

rr

ISD = 75A, dISD/dt = 100A/µs - - 110 ns

Reverse Recovered Charge Q

RR

ISD = 75A, dISD/dt = 100A/µs - - 225 nC

Typical Performance Curves

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

TC, CASE TEMPERATURE (oC)

POWER DISSIPA TION MULTIPLIER

0

0 25 50 75 100 150

0.2

0.4

0.6

0.8

1.0

1.2

125 17

5

I

D

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

20

40

60

80

50 75 100 125 150 17

5

0

25

t, RECTANGULAR PULSE DURATION (s)

SINGLE PULSE

NOTES:
DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJC

x R

θJC

+ T

C

P

DM

t

1

t

2

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.01

0.02

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-5

0.1

1

2

0.01

Z

θJC

, NORMALIZED

THERMAL IMPEDANCE

HUF75345G3, HUF75345P3, HUF75345S3S