Fairchild Semiconductor HUF75344G3, HUF75344P3, HUF75344S3S Datasheet

HUF75344G3, HUF75344P3, HUF75344S3S

Data Sheet December 2001

75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel pow er MOSFETs are manufactured using the innovative UltraFET

process. This

advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outsta ndi ng p erformance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switch in g regul ators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75344.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75344G3 TO-247 75344G HUF75344P3 TO-220AB 75344P HUF75344S3S TO-263AB 75344S

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75344S3ST.

Features

• 75A, 55V

• Simulation Models

- Temperature Compensated PSPICE

and SABER™

Models

- Thermal Impedance PSPICE and SABER Models Available on the web at: www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN (TAB)

JEDEC TO-263AB

GATE

SOURCE

Product reliability information can be found at ht tp://www.fairchilds e m i.com/products/dis crete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 qualit y systems certification.

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

HUF75344G3, HUF75344P 3, HU F7 53 44S3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

55 V 55 V

±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T

, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

pkg

Figure 4

Figure 6

285

1.90

-55 to 175

300 260

W/oC

NOTE:

1. T

= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSSID

DSS

GSS

= 250µA, VGS = 0V (Figure 11) 55 - - V

VDS = 50V, VGS = 0V - - 1 µA

= 45V, VGS = 0V, TC = 150oC--250µA

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 75A, VGS = 10V (Figure 9) - 0.0065 0.008 Ω

THERMAL SPECI FICATIONS

Thermal Resistance Junction to Case R Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (V

= 10V) Turn-On Time t Turn-On Delay Time t

d(ON)

Rise Time t Turn-Off Delay Time t

d(OFF)

Fall Time t Turn-Off Time t

θJC θJA

OFF

(Figure 3) - - 0.52 TO-247 - - 30 TO-220, TO-263 - - 62

VDD = 30V, ID ≅ 75A, R

= 0.4Ω, VGS = 10V,

= 3.0Ω

--195ns

-16- ns

- 112 - ns

-37- ns

-28- ns

--100ns

C/W

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q Gate Charge at 10V Q Threshold Gate Charge Q Gate to Source Gate Charge Q Reverse Transfer Capacitance Q

g(TOT)VGS

g(10)

g(TH)

= 0V to 20V VDD = 30V,

≅ 75A,

VGS = 0V to 10V - 90 108 nC VGS = 0V to 2V - 5.9 7.0 nC

= 0.4Ω

g(REF)

= 1.0mA

(Figure 13)

- 175 210 nC

-14-nC

-39-nC

CAPACITANCE SPECIFICATIONS

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

ISS

OSS

RSS

VDS = 25V, VGS = 0V, f = 1MHz (Figure 12)

- 3200 - pF

- 1170 - pF

- 310 - pF

HUF75344G3, HUF75344P 3, HU F7 53 44S3S

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V Reverse Recovery Time t Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

ISD = 75A - - 1.25 V ISD = 75A, dISD/dt = 100A/µs - - 105 ns ISD = 75A, dISD/dt = 100A/µs - - 210 nC

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125 175

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERATURE

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

THERMAL IMPEDANCE

0.01

-5

SINGLE PULSE

-4

-3

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

, DRAIN CURRENT (A)

50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

-1

1/t2

x R

θJC

+ T

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