Fairchild Semiconductor FQPF18N50V2, FQP18N50V2 Datasheet
FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
FQP18N50V2/FQPF18N50V2
TM
QFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
Features
• 18A, 500V, R
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.265Ω @VGS = 10 V
DS(on)
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
D
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S
G
SD
TO-220
FQP Series
Absolute Maximum Ratings T
D
G
S
= 25°C unless otherwise noted
C
TO-220F
FQPF Series
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!!!!
G
Symbol Parameter FQP18N50V2 FQPF18N50V2 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 500 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
18 18 A
12.1 12.1 A
72 72 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
330 mJ
18 A
25 mJ
4.5 V/ns
208 69 W
- Derate above 25°C 1.67 0.55 W/°C
T
, T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter FQP18N50V2 FQPF18N50V2 Units
R
θJC
R
θCS
R
θJA
©2002 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case 0.6 1.8 °C/W
Thermal Resistance, Case-to-Sink 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
Rev. B, August 2002
FQP18N50V2/FQPF18N50V2
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 500 V, VGS = 0 V
DS
V
= 400 V, TC = 125°C
DS
V
= 30 V, VDS = 0 V
GS
= -30 V, VDS = 0 V
V
GS
500 -- -- V
-- 0.5 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 9 A
V
GS
= 40 V, ID = 9 A
V
DS
(Note 4)
3.0 -- 5.0 V
-- 0.225 0.265 Ω
-- 16 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Input Capacitance
Output Capacitance -- 300 390 pF
Reverse Transfer Capacitance -- 11 14.3 pF
Output Capacitance
eff.
Effective Output Capacitance
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
V
= 400 V, VGS = 0 V,
DS
f = 1.0 MHz
VDS = 0V to 400 V, VGS = 0 V
-- 2530 3290 pF
-- 76 -- pF
-- 150 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 150 310 ns
Turn-Off Delay Time -- 95 200 ns
Turn-Off Fall Time -- 110 230 ns
Total Gate Charge
Gate-Source Charge -- 12 -- nC
Gate-Drain Charge -- 14 -- nC
= 250 V, ID = 18 A,
V
DD
= 25 Ω
R
G
(Note 4, 5)
= 400 V, ID = 18 A,
V
DS
V
GS
(Note 4, 5)
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.83mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- 18 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A
= 0 V, IS = 18 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 5.4 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 18 A,
V
GS
/ dt = 100 A/µs
dI
F
(Note 4)
-- 40 90 ns
-- 42 55 nC
-- -- 1.4 V
-- 420 -- ns
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
Typical Characteristics
FQP18N50V2/FQPF18N50V2
V
GS
Top : 15.0 V
10.0 V
8.0 V
1
7.0 V
10
6.5 V
6.0 V
Bottom : 5.5 V
0
10
, Drain Current [A]
D
I
-1
10
-1
10
0
10
$
Notes :
1. 250%s Pulse Test
= 25
2. T
C
1
10
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Char act er i stic s
1.0
0.8
],
0.6
'
[
DS(ON)
0.4
R
0.2
Drain-Source On-Resistance
0.0
0 10203040506070
VGS = 10V
ID, Drain Current [A]
$
Note : T
&
VGS = 20V
= 25
J
1
10
0
10
, Drain Current [A]
D
I
-1
10
246810
&
150
&
25
&
-55
$
Notes :
1. V
= 40V
DS
2. 25 0%s Pulse Test
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
1
10
0
10
, Reverse Drain Current [A]
DR
&
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
&
150
&
25
$
Note s :
= 0V
1. V
GS
2. 250%s Pulse Tes t
VSD , So u rc e- D ra in Volta g e [V ]
Figure 3. On-Resistance V ariation vs.
Drain Current and Gate Voltage
7000
6000
5000
4000
3000
2000
Capacitanc e [p F ]
1000
0
-1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
C
iss
C
oss
C
rss
0
10
1
10
$
Notes :
1. V
2. f = 1 MHz
= 0 V
GS
12
10
8
6
4
2
, Gate-Source Voltage [V]
GS
V
0
0 5 10 15 20 25 30 35 40 45
QG, Total Gate Charge [nC]
VDS = 100V
VDS = 250V
VDS = 400V
$
= 18A
Note : I
D
Rev. B, August 2002
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