Fairchild Semiconductor FQP1P50 Datasheet

June 2000

FQP1P50

FQP1P50

500V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complementary
half bridge.

G

D

S

TO-220

FQP Series

Features

• -1.5A, -500V, R

• Low gate charge ( typical 11 nC)

• Low Crss ( typical 6.0 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 10.5Ω @VGS = -10 V

DS(on)

S

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D

QFET

QFET

QFETQFET

▲▲▲▲

▲▲▲▲

TM

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FQP1P50 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage -500 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

-1.5 A

-0.95 A

-6.0 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

110 mJ

-1.5 A

6.3 mJ

-4.5 V/ns

63 W

- Derate above 25°C 0.51 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 1.98 °C/W
Thermal Resistance, Case-to-Sink 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2000 Fairchild Semiconductor International

Rev. A, June 2000

FQP1P50

Elerical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -500 V, VGS = 0 V

DS

V

= -400 V, TC = 125°C

DS

V

= -30 V, VDS = 0 V

GS

= 30 V, VDS = 0 V

V

GS

-500 -- -- V

-- - -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -0.75 A

V

GS

= -50 V, ID = -0.75 A

V

DS

(Note 4)

-3.0 -- -5.0 V

-- 8.0 10.5 Ω

-- 1.26 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 40 50 pF
Reverse Transfer Capacitance -- 6.0 8.0 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 270 350 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 25 60 ns
Turn-Off Delay Time -- 27 65 ns
Turn-Off Fall Time -- 30 70 ns
Total Gate Charge
Gate-Source Charge -- 2.0 -- nC
Gate-Drain Charge -- 5.6 -- nC

= -250 V, ID = -1.5 A,

V

DD

= 25 Ω

R

G

V

= -400 V, ID = -1.5 A,

DS

V

GS

= -10 V

(Note 4, 5)

(Note 4, 5)

-- 9.0 30 ns

-- 11 14 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 88mH, IAS = -1.5A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -1.5A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- -1.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -6.0 A

= 0 V, IS = -1.5 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.7 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -1.5 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- -5.0 V

-- 200 -- ns

(Note 4)

Rev. A, June 2000

Typical Characteristics

FQP1P50

10

10

, Drain Current [A]

D

-I

10

V
Top : -15. 0 V

-10.0 V

-8.0 V

-7.0 V

0

-6.5 V

-6.0 V
Botto m : -5. 5 V

-1

-2

-1

10

GS

-VDS, Drain-Source Voltage [V]

0

※

Notes :

1. 250μs Pulse Tes t

℃

2. T

= 25

C

0

10

1

10

10

℃

150

℃

, Drain Current [A]

D

-I

-1

10

246810

25

-VGS , Gate-Source Voltage [V]

※

Notes :

℃

-55

1. V

= -50V

DS

2. 250μs Pulse Tes t

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

VGS = - 10V

VGS = - 20V

℃

※

= 25

Note : T

J

16

14

12

[Ω],

DS(on)

R

10

Drain-Source On-Resistance

8

6

01234

-ID , Drai n Curren t [A]

0

10

℃

, Reverse Drain Current [A]

DR

-I

-1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

150

-VSD , Sou r c e-Drain Voltag e [V]

℃

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Tes t

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

600

500

400

300

200

Capacitance [pF]

100

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

※

Notes :

1. V

GS

2. f = 1 MH z

1

10

= 0 V

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = -100V

VDS = -250V

VDS = -400V

※

Note : I

= -1.5 A

D

Rev. A, June 2000

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

024681012

QG, Tota l Gate Charge [n C]