Fairchild Semiconductor FQP1N60 Datasheet

y

QFET

N-CHANNEL FQP1N60

FEATURES

• Advanced New Design

• Avalanche Rugged Technology

• Rugged Gate Oxide Technology

• Very L ow Int rinsic Capacitances

BV

DSS

R

DS(ON)

= 1.2A

I

D

= 600V

= 11.5Ω

• Excellent Switching Characteristics

TO-220

• Unrivalled Gate Charge: 5.0nC (Typ.)

• Extended Safe Operating Area

1

•Lower R

DS(ON)

: 9.3Ω (Typ.)

2

3

1. Gate 2. Drai n 3. So urc e

ABSOLUTE MAXIMUM RATINGS

Symbol Characteristics Value Units

V

DSS

I

D

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt 4.5 V/ns

Drain-to-Source Voltage 600 V
Continuous Drain Current (TC = 25°C) 1.2
Continuous Drain Current (T
Drain Current-Pulsed 4.8 A

= 100°C) 0.76

C

①

Gate-to-Source Voltage ±30 V
Single Pulsed Avalanche Energy 50 mJ
Avalanche Current 1.2 A
Repetitive Avalanche Energy 4.0 mJ

②
①
①
③

A

P

D

T

, T

J

STG

T

L

Total Power Dissipation (TC = 25°C)
Linear Derating Factor

Operating Junction and Storage
Temperature Range

Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds

THERMAL RESISTANCE

S

mbol Characteristics Typ. Max. Units

R

JC

θ

CS

θ

R

JA

θ

40

0.32

−55 to +150

300

Junction-to-Case − 3.13

Case-to-Sink 0.5 −

Junction-to-Ambient − 62.5

W

W/°C

°C

°C/WR

REV. B

1

 1999 Fairchild Semiconductor Corporation

FQP1N60 QFET N-CHANNEL

g

g

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise specified)

Symbol Characteristics Min. Typ. Max. Units Test Conditions

BV

DSS

∆BV/∆T

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Breakdown Voltage 600 −−VVGS=0V, ID=250µA
Breakdown Voltage Temp. Coeff. − 0.4 − V/°CID=250µA,

J

See Fi g 7

Gate Threshold Voltage 3.0 − 5.0 V VDS=5V, ID=250µA
Gate-Source Leakage, Forward −−100

VGS=30V

nA

Gate-Source Leakage, Reverse −−−100 V

−−10

Drain-to-Source Leakage Current

µA

−−100 V

Static Drain-Source
On-State Resistance

− 9.3 11.5 Ω V

= −30V

GS

V

=600V

DS

=480V, TC=125°C

DS

=10V, ID=0.6A ④

GS

Forward Transconductance − 0.9 − SVDS=50V, ID=0.6A ④
Input Capacitance − 120 150
Output Capacitance − 20 25
Reverse Transfer Capacitance − 3.0 4.0

pF

=0V, VDS=25V

V

GS

f=1MHz

See Fi g 5

Turn-On Del ay Ti m e − 520

=300V, ID=1.2A

V

Rise T ime − 25 60

ns

Turn-Off Del ay Ti me − 725

DD

R

=50Ω

G

See Fi g 13

④ ⑤

Fall Time − 25 60
Total Gate Charge − 5.0 6.0
Gate-Source Charge − 1.0 −
Gate-Drain (Miller) Charge − 2.6 −

nC

=480V, VGS=10V

V

DS

I

=1.2A

D

See Fig 6 & Fig 12

④ ⑤

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Charac teristics Min. Typ. Max. Units Test Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

Repetitive Ratin

①

L=64mH, I

②

≤ 1.2A, di/dt ≤ 200A/µs, V

I

③

SD

Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

④

Essentially Independent of Operatin

⑤

2

Continuous Source Current −−1.2
Pulsed-Source Current ① −−4.8

Integral reverse pn-diode

A

in the MOSFET

Diode Forward Voltage ④ −−1.4 V TJ=25°C, IS=1.2A, VGS=0V
Reverse Recovery Time − 160 − ns
Reverse Recovery Charge − 0.3 −µC

: Pulse Width Limited by Maximum Junction Temperature

=1.2A, VDD=50V, RG=25Ω, Starting TJ =25°C

AS

DD

≤

BV

DSS

Temperature

, Starting TJ =25°C

=25°C, IF=1.2A, VDD=480V

T

J

di

/dt=100A/µs ④

F

QFET N-CHANNEL FQP1N60

¡Ø Note :

1. 250¥ìs Pulse Test

2. T

0

10

1

10

10

10

, Drain Current [A]

D

I

10

V
Top : 15.0 V

10.0 V

8.0 V

0

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

-1

-2

-1

10

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

GS

VDS, Drain-Source Voltage [V]

30

25

20

[¥Ø ],

15

DS(ON)

R

10

Drain-Source O n-Resistance

5

0

0.0 0.5 1.0 1.5 2.0 2.5

VGS = 10V

VGS = 20V

¡Ø Note : TJ = 25¡É

ID, Drain Current [A]

= 25¡É

C

0

10

150¡É

25¡É

, Drain Current [A]

D

I

-1

10

246810

-55¡É

¡Ø Note

= 50V

1. V

DS

2. 250¥ìs Pulse Te st

VGS , Gate-Sourc e Volta ge [V]

Fig 4. Source-D rain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

0

10

, Re verse Drai n Cu rr e nt [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

150¡É

25¡É

¡Ø Note :

1. V

2. 250¥ìs Pu lse Test

VSD , Source -Drain Voltage [V]

= 0V

GS

200

150

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

C

iss

gd

Fig 6. Gate Charge vs. Gate-Source Vol tag eFig 5. Capacitance vs. Drain-Source Voltage

12

VDS = 120V

10

VDS = 300V

VDS = 480V

8

C

oss

100

¡Ø Note ;

= 0 V

1. V

1

10

GS

2. f = 1 MHz

Capacitances [pF]

50

0

-1

10

C

rss

0

10

VDS, Drain-Source Voltage [V]

6

4

, Gate-Source Voltage [V]

GS

2

V

¡Ø Note : ID = 1.2 A

0

012345

QG, Total Gate Charg e [nC ]

3