Fairchild Semiconductor FQNL2N50B Datasheet

FQNL2N50B

500V N-Channel MOSFET

FQNL2N50B

March 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching

Features

• 0.35A, 500V, R

• Low gate charge ( typical 6.0 nC)

• Low Crss ( typical 4.0 pF)

• Fast switching

• Improved dv/dt capability

= 5.3Ω @VGS = 10 V

DS(on)

performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.

D

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S

G

D

S

Absolute Maximum Ratings T

TO-92L

FQNL Series

= 25°C unless otherwise noted

C

!

!

G

Symbol Parameter FQNL2N50B Units

V

DSS

I

D

I

DM

V

GSS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 500 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

0.35 A

0.22 A

1.4 A
Gate-Source Voltage ± 30 V
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 1)
(Note 1)
(Note 2)

0.35 A

0.15 mJ

4.5 V/ns

1.5 W

- Derate above 25°C 0.012 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

©2001 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Ambient -- 83 °C/W

Rev. A, March 2001

FQNL2N50B

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 500 V, VGS = 0 V

DS

V

= 400 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

500 -- -- V

-- 0.48 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Forward Transconductance

V

DS

V

= VGS, ID = 250 mA

DS

= 10 V, ID = 0.175 A

V

GS

= 50 V, ID = 0.175 A

V

DS

(Note 3)

2.3 3.0 3.7 V

3.6 4.3 5.0 V

-- 4.2 5.3 Ω

-- 0.72 -- S

= VGS, ID = 250 µA

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 30 40 pF
Reverse Transfer Capacitance -- 4 6 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 180 230 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 25 60 ns
Turn-Off Delay Time -- 10 30 ns
Turn-Off Fall Time -- 20 50 ns
Total Gate Charge
Gate-Source Charge -- 1.3 -- nC
Gate-Drain Charge -- 3.0 -- nC

= 250 V, ID = 2.1 A,

V

DD

= 25 Ω

R

G

V

= 400 V, ID = 2.1 A,

DS

V

GS

= 10 V

(Note 3, 4)

(Note 3, 4)

-- 6 20 ns

-- 6.0 8.0 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. ISD ≤ 2.1A, di/dt ≤ 200A/µs, VDD≤ BV

3. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

4. Essentially independent of operating temperature

©2001 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 0.35 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 1.4 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.69 -- µC

Starting TJ = 25°C

DSS,

= 0 V, IS = 0.35 A

GS

= 0 V, IS = 2.1 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.4 V

-- 195 -- ns

(Note 3)

Rev. A, March 2001

Typical Characteristics

FQNL2N50B

V

0

10

-1

10

, Dra in Curre n t [A ]

D

I

-2

10

10

Top : 1 5 V
10 V

8.0 V

7.0 V

6.5 V

6.0 V
Botto m : 5.5 V

-1

GS

※

Note :

1. 250μs Pulse Test

℃

= 25

2. T

C

0

10

1

10

VDS , Drain-Source Voltage [V]

18

15

12

],

Ω

[

9

DS(on )

R

6

Drain-Source On-Resistance

3

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VGS = 20V

VGS = 10V

※

Note : T

ID , Dra in C u rre n t [A]

0

10

℃

150

, Dra in Cu rrent [A]

D

I

-1

10

246810

℃

25

℃

-55

※

Note

1. V

= 50V

DS

2. 250μs Pulse Test

VGS , Gate - Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0

10

, Reverse Drain Current [A]

DR

I

℃

= 25

J

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

℃

25

℃

※

Note :

= 0V

1. V

GS

2. 250μs Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 100V

VDS = 250V

VDS = 400V

※

Note : I

350

300

250

200

150

100

Capacitances [pF]

50

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

※

Note :

1. V

= 0 V

GS

10

2. f = 1 MHz

1

C

rss

0

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

01234567

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

= 2.1 A

D

Rev. A, March 2001©2001 Fairchild Semiconductor Corporation