Fairchild Semiconductor FQNL1N50B Datasheet

FQNL1N50B

500V N-Channel MOSFET

FQNL1N50B

March 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching

Features

• 0.27A, 500V, R

• Low gate charge ( typical 4.0 nC)

• Low Crss ( typical 3.0 pF)

• Fast switching

• Improved dv/dt capability

= 9.0Ω @VGS = 10 V

DS(on)

performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.

D

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S

G

D

S

Absolute Maximum Ratings T

TO-92L

FQNL Series

= 25°C unless otherwise noted

C

!

!

G

Symbol Parameter FQNL1N50B Units

V

DSS

I

D

I

DM

V

GSS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 500 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

0.27 A

0.17 A

1.08 A
Gate-Source Voltage ± 30 V
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 1)
(Note 1)
(Note 2)

0.27 A

0.15 mJ

4.5 V/ns

1.5 W

- Derate above 25°C 0.012 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

©2001 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Ambient -- 83 °C/W

Rev. A, March 2001

FQNL1N50B

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 500 V, VGS = 0 V

DS

V

= 400 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

500 -- -- V

-- 0.5 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Forward Transconductance

V

DS

V

= VGS, ID = 250 mA

DS

= 10 V , ID = 0.135 A

V

GS

= 50 V, ID = 0.135 A

V

DS

(Note 3)

2.3 3.0 3.7 V

3.6 4.3 5.0 V

-- 6.8 9.0 Ω

-- 0.55 -- S

= VGS, ID = 250 µA

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 20 30 pF
Reverse Transfer Capacitance -- 3.0 4.0 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 115 150 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 25 60 ns
Turn-Off Delay Time -- 8 25 ns
Turn-Off Fall Time -- 20 50 ns
Total Gate Charge
Gate-Source Charge -- 1.1 -- nC
Gate-Drain Charge -- 2.2 -- nC

= 250 V, ID = 1.4 A,

V

DD

= 25 Ω

R

G

V

= 400 V, ID = 1.4 A,

DS

V

GS

= 10 V

(Note 3, 4)

(Note 3, 4)

-- 5 20 ns

-- 4.0 5.5 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

trr Reverse Recovery Time V
Qrr Reverse Recovery Charge -- 0.4 -- µC

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. ISD ≤ 1.4A, di/dt ≤ 200A/us, VDD≤ BV

3. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%

4. Essentially independent of operating temperature

©2001 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 0.27 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 1.08 A

V

Drain-Source Diode Forward Voltage

Starting TJ = 25°C

DSS,

= 0 V, IS = 0.27 A

GS

= 0 V, IS = 1.4 A,

GS

dI

/ dt = 100 A/us

F

-- -- 1.4 V

-- 170 -- ns

(Note 3)

Rev. A, March 2001

Typical Characteristics

FQNL1N50B

10

10

, Drain Current [A]

D

I

10

0

V
Top : 1 5 V
10 V

8.0 V

7.0 V

6.5 V

6.0 V
Botto m : 5.5 V

-1

-2

-1

10

GS

※

Notes :

1. 250μs Pulse Test

2. T

= 25

C

0

10

1

10

VDS , Drain-Source Voltage [V]

24

20

16

, [Ω]

12

DS(on)

R

8

Drain-Source On-Resistance

4

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 20V

VGS = 10V

※

Note : T

ID , Drai n Curren t [A]

0

10

150

-1

10

25

, Dra in Curre n t [A ]

D

I

℃

-2

10

246810

℃

℃

℃

-55

※

Note s :

1. V

= 50V

DS

2. 250μs Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics.Figure 1. On-Region Char acteristics.

0

10

-1

℃

= 25

J

10

℃

, Reverse Drain Current [A]

DR

I

-2

10

0.2 0.4 0.6 0.8 1.0 1.2

150

VSD, Source-Drain voltage [V]

℃

25

※

Note :

1. V

= 0V

GS

2. 250μs Pulse Test

Figure 3. On-Resistance Variation vs

Drain Current and Ga te Voltage.

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

200

150

100

Capacitances [pF]

50

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

※

Note ;

= 0 V

1. V

10

2. f = 1 MH z

1

GS

C

rss

0

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-S o u rce V o ltag e [V ]

2

GS

V

0

012345

VDS = 100V

VDS = 250V

VDS = 400V

QG, Tota l Gate C harge [n C]

※

Note s : I

Figure 5. Capacitance Characteristics. Figure 6. Gate -Charge Characteristics.

= 1.4 A

D

Rev. A, March 2001©2001 Fairchild Semiconductor Corporation