Fairchild Semiconductor FQI9N08L Datasheet
FQB9N08L / FQI9N08L
80V LOGIC N-Channel MOSFET
June 2000
QFET
QFET
QFETQFET
TM
General Description
These N-Channel enhancement mode power field effect
FQB9N08L / FQI9N08L
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC mo tor
control.
D
G
S
D2-PAK
FQB Series
Absolute Maximum Ratings T
Symbol Parameter FQB9N08L / FQI9N08L Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 80 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G
D
S
= 25°C unless otherwise noted
C
- Continuous (T
- Continuous (T
= 25°C)
C
- Derate above 25°C 0.27 W/°C
= 25°C)
C
= 100°C)
C
Features
• 9.3A, 80V, R
• Low gate charge ( typical 4.7 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirments allowing
direct operation from logic drives
I2-PAK
FQI Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 0.21Ω @VGS = 10 V
DS(on)
G
9.3 A
6.57 A
37.2 A
55 mJ
9.3 A
4.0 mJ
6.5 V/ns
3.75 W
40 W
300 °C
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D
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S
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Thermal Resistance, Junction-to-Case -- 3.75 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Rev. A, June 2000
FQB9N08L / FQI9N08L
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 80 V, VGS = 0 V
DS
V
= 64 V, TC = 150°C
DS
V
= 20 V, VDS = 0 V
GS
= -20 V, VDS = 0 V
V
GS
80 -- -- V
-- 0.08 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
V
= 10 V, ID = 4.65 A
GS
= 5 V, ID = 4.65 A
V
GS
V
= 25 V, ID = 4.65 A
DS
(Note 4)
1.0 -- 2.0 V
0.15
--
0.17
0.21
0.23
-- 4.9 - - S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 70 90 pF
Reverse Transfer Capacitance -- 16 20 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 215 280 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 180 370 ns
Turn-Off Delay Time -- 13 35 ns
Turn-Off Fall Time -- 30 70 ns
Total Gate Charge
Gate-Source Charge -- 1.2 -- nC
Gate-Drain Charge -- 2.8 -- nC
= 40 V, ID = 9.3 A,
V
DD
= 25 Ω
R
G
= 64 V, ID = 9.3 A,
V
DS
V
GS
= 5 V
(Note 4, 5)
(Note 4, 5)
-- 6.5 23 ns
-- 4.7 6.1 nC
Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.87mH, IAS = 9.3A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.3A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Maximum Continuous Drain-Source Diode Forward Current -- -- 9.3 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 37.2 A
= 0 V, IS = 9.3 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 80 -- nC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 9.3 A,
V
GS
/ dt = 100 A/µs
dI
F
(Note 4)
-- -- 1.5 V
-- 54 -- ns
Rev. A, June 2000
Typical Characteristics
V
Top : 10.0 V
8.0 V
6.0 V
1
10
5.0 V
4.5 V
4.0 V
3.5 V
Botto m : 3.0 V
0
10
, Drain Current [A]
FQB9N08L / FQI9N08L
D
I
-1
10
-1
10
0.8
0.6
],
Ω
[
0.4
DS(on)
R
0.2
Drain-Source On-Resistance
0.0
0 5 10 15 20 25
GS
0
10
VDS, Drain-Source Voltage [V]
VGS = 5V
VGS = 10V
ID , Drain Curren t [A]
1
10
℃
175
0
10
℃
25
, Dra in Cu rrent [A]
D
※
Notes :
1. 250μs Pulse Tes t
℃
= 25
2. T
C
1
10
I
-1
10
0246810
VGS , Gate - Source Voltage [V]
℃
-55
※
Notes :
1. V
= 25V
DS
2. 250μs Pulse Test
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1
10
※
Note : T
= 25
J
℃
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
℃
175
VSD , Source-Drain Voltage [V]
℃
25
※
Notes :
1. V
= 0V
GS
2. 250μs Pulse Te st
Figure 3. On-Resistance Variati on vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = 40V
VDS = 64V
※
Note : I
600
500
400
300
200
Capacitance [pF]
100
0
-1
10
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
※
Notes :
= 0 V
1. V
10
1
GS
2. f = 1 MH z
C
iss
C
oss
C
rss
0
10
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0123456789
QG, Tota l Gate Charge [n C]
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics
= 9.3A
D
Rev. A, June 2000©2000 Fairchild Semiconductor International
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